Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 4

Results: 22

Amplification of electromagnetic waves at odd harmonics of the cyclotron resonance of heavy holes with negative effective masses in semiconducting diamond

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 452, doi. 10.1134/1.1187414

By:

Chuenkov, V. A.

Publication type:

Article

Subthreshold characteristics of electrostatically switched transistors and thyristors. II. Deep in-plane gate

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 446, doi. 10.1134/1.1187413

By:

Kyuregyan, A. S.

Publication type:

Article

Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 423, doi. 10.1134/1.1187554

By:

Eliseev, P. G.;
Akimova, I. V.

Publication type:

Article

Recombination of donor nickel excitons in the solid solutions ZnSe1_ySy:Ni

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 406

By:

Sokolov, V. I.;
Dolzhenkov, O. V.

Publication type:

Article

Effect of thermal annealing and chemical treatment on the photolumineecenca of porous silicon

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 443, doi. 10.1134/1.1187412

By:

Shelonin, E. A.;
Naidenkova, M. V.;
Khort, A. M.;
Yakovenko, A. G.;
Gvelesiani, A. A.;
Maronchuk, I. E.

Publication type:

Article

Study of optical absorption in thin films of a-As2Se3 by photocapacitance spectroscopy

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 439

By:

Vasil'ev, I. A.;
Shutov, S. D.

Publication type:

Article

Staebler-Wronski effect as a function of the Fermi level position and structure of nondoped, amorphous, hydrated silicon

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 434, doi. 10.1134/1.1187410

By:

Golikova, O. A.;
Kazanin, M. M.;
Kudoyarova, V. Kh.

Publication type:

Article

Radiation emitted by InGaAs quantum-well structures. II. Homogeneous lineshape function

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 428, doi. 10.1134/1.1187409

By:

Eliseev, P. G.;
Akimova, I. V.

Publication type:

Article

On trapping of minority current carriers in n-type CdxHg1_xTe at low temperatures

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 389, doi. 10.1134/1.1187401

By:

Gasan-zade, S. G.;
Shepel'skii, G. A.

Publication type:

Article

Intraband absorption of light in quantum wells induced by electron-electron collisions

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 417, doi. 10.1134/1.1187408

By:

Zegrya, G. G.;
Periin, V. E.

Publication type:

Article

Electric and photoelectric properties of n-Gaxln1_xN/p-Si anisotypic heterojunctions

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 412, doi. 10.1134/1.1187407

By:

Aleksandrov, S. E.;
Zykov, V. A.;
Gavrikova, T. A.;
Krasovitskii, D. M.

Publication type:

Article

Photosensitivity of thin-film structures based on laser-deposited Culn(TexSe1_x)2 layers

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 409

By:

Bodnar', I. V.;
Gremenok, V. F.;
Rud', V. Yu.;
Rud', Yu. V.

Publication type:

Article

Observation of low-temperature diffusion of aluminum impurity atoms in hydrogen-implanted silicon

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 375, doi. 10.1134/1.1187399

By:

Gorelkinskii, Yu. V.;
Mukashev, O. N.;
Abdullin, Kh. A.

Publication type:

Article

Indirect electronic transitions in semiconductors occurring as a result of scattering of charge carriers by dislocations in a quantizing magnetic field

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 404, doi. 10.1134/1.1187404

By:

Kazaryan, E. M.;
Mkhoyan, K. A.

Publication type:

Article

Energy spectrum of acceptors in the semimagnetic semiconductors p-Hg1_xMnxTe in the spin-glass region

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 401

By:

Georgitse, E. I.;
Ivanov-Omskii, V. I.;
Tsypishka, D. I.

Publication type:

Article

Characteristic features of the defect formation process in Pb1_xSnxSe(x<0.06)

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 397, doi. 10.1134/1.1187402

By:

Veis, A. N.;
Suvorova, N. A.

Publication type:

Article

Short-wavelength photoluminescence of SIO2 layers Implanted with high doses of Si+, Ge+, and Ar+ ions

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 392, doi. 10.1134/1.1187417

By:

Kachurin, G. A.;
Rebohle, L.;
Skorupa, W.;
Yankov, R. A.;
Tyschenko, I. E.;
Froeb, H.;
Boehme, T.;
Leo, K.

Publication type:

Article

Thermal expansion and characteristic features of the strength of interatomic bonds in melts of III-V compounds (AISb, GaSb, InSb, GaAs, InAs)

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 382, doi. 10.1134/1.1187400

By:

Glazov, V. M.;
Shchelikov, O. D.

Publication type:

Article

Optical absorption and photosensitivity of CulnxGa1_xSe2 thin film structures

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 385

By:

Rud', V. Yu.;
Rud', Yu. V.;
Bodnar', I. V.;
Gremenok, V. F.

Publication type:

Article

Influence of the initial boron doping level on the boron atom distribution arising as a result of heat treatment in silicon Implanted with boron ions

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 372, doi. 10.1134/1.1187398

By:

Obodnikov, V. I.;
Tishkovskii, E. G.

Publication type:

Article

Effect of nonuniform distribution of radiation defects in GaAs on the DLTS spectra

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 366, doi. 10.1134/1.1187397

By:

Novikov, V. A.;
Peshev, V. V.

Publication type:

Article

Quantum dot heterostructures: fabrication, properties, lasers (Review)

Published in:

Semiconductors, 1998, v. 32, n. 4, p. 343, doi. 10.1134/1.1187396

By:

Ledentsov, N. N.;
Ustinov, V. M.;
Shchukin, V. A.;
Kop'ev, P. S.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article