Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 2
Results: 25
Recombination of charge carriers in dislocation-free silicon containing growth microdefects of various types.
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- Semiconductors, 1998, v. 32, n. 2, p. 117, doi. 10.1134/1.1187328
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Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation.
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- Semiconductors, 1998, v. 32, n. 2, p. 120, doi. 10.1134/1.1187329
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Diffusion doping of undoped hydrogenated amorphous silicon with tin.
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- Semiconductors, 1998, v. 32, n. 2, p. 123, doi. 10.1134/1.1187330
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Ultrashallow p[sup +]-n junctions in silicon (100): electron-beam diagnostics of the surface zone.
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- Semiconductors, 1998, v. 32, n. 2, p. 124, doi. 10.1134/1.1187547
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- Article
Exciton characteristics of intercalated TlGaSe[sub 2] single crystal.
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- Semiconductors, 1998, v. 32, n. 2, p. 131, doi. 10.1134/1.1187331
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- Article
Deformation potentials of the Γ(000) band extrema in CdGa[sub 2]S[sub 4].
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- Semiconductors, 1998, v. 32, n. 2, p. 133, doi. 10.1134/1.1187332
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Optical spectra of microcrystals of the layered semiconductor PbI[sub 2] grown in glass matrices.
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- Semiconductors, 1998, v. 32, n. 2, p. 136, doi. 10.1134/1.1187333
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- Article
Excited states of chalcogen ions in germanium.
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- Semiconductors, 1998, v. 32, n. 2, p. 140, doi. 10.1134/1.1187334
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Self-compensation in CdTe<Cl> in the presence of phase equilibrium of the system crystal-cadmium (tellurium) vapor.
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- Semiconductors, 1998, v. 32, n. 2, p. 144, doi. 10.1134/1.1187335
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- Article
Negative dynamic differential conductivity at the cyclotron frequency in Ga[sub 1-x]Al[sub x]As under conditions of ballistic intervalley electron transfer.
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- Semiconductors, 1998, v. 32, n. 2, p. 148, doi. 10.1134/1.1187336
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The effect of copper doping of n-ZnSe crystals on the structure of luminescence centers of long-wavelength luminescence.
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- Semiconductors, 1998, v. 32, n. 2, p. 154, doi. 10.1134/1.1187337
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The structure of high-temperature blue luminescence centers in zinc selenide and mechanisms of this luminescence.
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- Semiconductors, 1998, v. 32, n. 2, p. 160, doi. 10.1134/1.1187338
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- Article
Effect of heteroepitaxial surface passivation on the photosensitivity spectra and recombination parameters of GaAs layers.
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- Semiconductors, 1998, v. 32, n. 2, p. 164, doi. 10.1134/1.1187552
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- Article
Transient current in amorphous, porous semiconductor–crystalline semiconductor structures.
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- Semiconductors, 1998, v. 32, n. 2, p. 169, doi. 10.1134/1.1187557
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Current–voltage characteristics of Si:B blocked impurity–band structures under conditions of hopping-transport-limited photoresponse.
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- Semiconductors, 1998, v. 32, n. 2, p. 174, doi. 10.1134/1.1187339
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- Article
Ohmic contact formation during continuous heating of GaAs and GaP Shottky diodes.
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- Semiconductors, 1998, v. 32, n. 2, p. 181, doi. 10.1134/1.1187340
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Relaxation of the electric field in high-resistivity, strongly biased MISIM structures with deep impurity levels.
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- Semiconductors, 1998, v. 32, n. 2, p. 184, doi. 10.1134/1.1187341
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- Article
Photoelectrical memory in GaAs/AlGaAs multilayer quantum-well structures.
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- Semiconductors, 1998, v. 32, n. 2, p. 189, doi. 10.1134/1.1187342
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- Article
Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs.
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- Semiconductors, 1998, v. 32, n. 2, p. 195, doi. 10.1134/1.1187343
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- Article
Interband absorption of long-wavelength radiation in δ-doped superlattices based on single-crystal wide-gap semiconductors.
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- Semiconductors, 1998, v. 32, n. 2, p. 201, doi. 10.1134/1.1187553
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Lateral traveling wave as a type of transient process in a resonant-tunneling structure.
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- Semiconductors, 1998, v. 32, n. 2, p. 206, doi. 10.1134/1.1187344
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- Article
The structure of porous gallium phosphide.
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- Semiconductors, 1998, v. 32, n. 2, p. 213, doi. 10.1134/1.1187548
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InAsSbP double-heterostructure lasers for the spectral range 2.7–3.0 μm(T=77 K).
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- Semiconductors, 1998, v. 32, n. 2, p. 218, doi. 10.1134/1.1187345
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Gamma-induced metastable states of doped, amorphous, hydrated silicon.
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- Semiconductors, 1998, v. 32, n. 2, p. 222, doi. 10.1134/1.1187346
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Subthreshold characteristics of electrostatically controlled transistors and thyristors. 1. Shallow planar gate.
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- Semiconductors, 1998, v. 32, n. 2, p. 225, doi. 10.1134/1.1187347
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- Article