Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 2

Results: 25

Recombination of charge carriers in dislocation-free silicon containing growth microdefects of various types.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 117, doi. 10.1134/1.1187328

By:

Kazakevich, L. A.;
Lugakov, P. F.

Publication type:

Article

Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 120, doi. 10.1134/1.1187329

By:

Khirunenko, L. I.;
Shakhovtsov, V. I.;
Shumov, V. V.

Publication type:

Article

Diffusion doping of undoped hydrogenated amorphous silicon with tin.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 123, doi. 10.1134/1.1187330

By:

Kulikov, G. S.;
Khodzhaev, K. Kh.

Publication type:

Article

Ultrashallow p[sup +]-n junctions in silicon (100): electron-beam diagnostics of the surface zone.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 124, doi. 10.1134/1.1187547

By:

Andronov, A. N.;
Robozerov, S. V.;
Bagraev, N. T.;
Klyachkin, L. E.

Publication type:

Article

Exciton characteristics of intercalated TlGaSe[sub 2] single crystal.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 131, doi. 10.1134/1.1187331

By:

Mustafaeva, S. N.;
Kerimova, E. M.;
Gasanov, N. Z.

Publication type:

Article

Deformation potentials of the Γ(000) band extrema in CdGa[sub 2]S[sub 4].

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 133, doi. 10.1134/1.1187332

By:

Kerimova, T. G.;
Mamedov, Sh. S.;
Mamedova, I. A.

Publication type:

Article

Optical spectra of microcrystals of the layered semiconductor PbI[sub 2] grown in glass matrices.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 136, doi. 10.1134/1.1187333

By:

Ablitsova, A. S.;
Agekyan, V. F.;
Serov, A. Yu.

Publication type:

Article

Excited states of chalcogen ions in germanium.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 140, doi. 10.1134/1.1187334

By:

Ushakov, A. Yu.;
Shterengas, R. M.;
Shterengas, L. M.;
Radchuk, N. B.

Publication type:

Article

Self-compensation in CdTe<Cl> in the presence of phase equilibrium of the system crystal-cadmium (tellurium) vapor.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 144, doi. 10.1134/1.1187335

By:

Matveev, O. A.;
Terent’ev, A. I.

Publication type:

Article

Negative dynamic differential conductivity at the cyclotron frequency in Ga[sub 1-x]Al[sub x]As under conditions of ballistic intervalley electron transfer.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 148, doi. 10.1134/1.1187336

By:

Dzamukashvili, G. É.;
Kachlishvili, Z. S.;
Metreveli, N. K.

Publication type:

Article

The effect of copper doping of n-ZnSe crystals on the structure of luminescence centers of long-wavelength luminescence.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 154, doi. 10.1134/1.1187337

By:

Ivanova, G. N.;
Kasiyan, V. A.;
Nedeoglo, D. D.;
Oprya, S. V.

Publication type:

Article

The structure of high-temperature blue luminescence centers in zinc selenide and mechanisms of this luminescence.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 160, doi. 10.1134/1.1187338

By:

Ivanova, G. N.;
Kasiyan, V. A.;
Nedeoglo, N. D.;
Nedeoglo, D. D.;
Simashkevich, A. V.

Publication type:

Article

Effect of heteroepitaxial surface passivation on the photosensitivity spectra and recombination parameters of GaAs layers.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 164, doi. 10.1134/1.1187552

By:

Karpovich, I. A.;
Stepikhova, M. V.

Publication type:

Article

Transient current in amorphous, porous semiconductor–crystalline semiconductor structures.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 169, doi. 10.1134/1.1187557

By:

Kazakova, L. P.;
Lebedev, É. A.

Publication type:

Article

Current–voltage characteristics of Si:B blocked impurity–band structures under conditions of hopping-transport-limited photoresponse.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 174, doi. 10.1134/1.1187339

By:

Aronzon, B. A.;
Kovalev, D. Yu.;
Kozlov, A. M.;
Leotin, J.;
Ryl’kov, V. V.

Publication type:

Article

Ohmic contact formation during continuous heating of GaAs and GaP Shottky diodes.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 181, doi. 10.1134/1.1187340

By:

Goldberg, Yu. A.;
Posse, E. A.

Publication type:

Article

Relaxation of the electric field in high-resistivity, strongly biased MISIM structures with deep impurity levels.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 184, doi. 10.1134/1.1187341

By:

Reznikov, B. I.

Publication type:

Article

Photoelectrical memory in GaAs/AlGaAs multilayer quantum-well structures.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 189, doi. 10.1134/1.1187342

By:

Ovsyuk, V. N.;
Dem’yanenko, M. A.;
Shashkin, V. V.;
Toropov, A. I.

Publication type:

Article

Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 195, doi. 10.1134/1.1187343

By:

Voronina, T. I.;
Lagunova, T. S.;
Mikhaılova, M. P.;
Moiseev, K. D.;
Rosov, A. E.;
Yakovlev, Yu. P.

Publication type:

Article

Interband absorption of long-wavelength radiation in δ-doped superlattices based on single-crystal wide-gap semiconductors.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 201, doi. 10.1134/1.1187553

By:

Osipov, V. V.;
Selyakov, A. Yu.;
Foygel, M.

Publication type:

Article

Lateral traveling wave as a type of transient process in a resonant-tunneling structure.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 206, doi. 10.1134/1.1187344

By:

Mel’nikov, D. V.;
Podlivaev, A. I.

Publication type:

Article

InAsSbP double-heterostructure lasers for the spectral range 2.7–3.0 μm(T=77 K).

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 218, doi. 10.1134/1.1187345

By:

Danilova, T. N.;
Danilova, A. P.;
Ershov, O. G.;
Imenkov, A. N.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

The structure of porous gallium phosphide.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 213, doi. 10.1134/1.1187548

By:

Zavaritskaya, T. N.;
Kvit, A. V.;
Mel’nik, N. N.;
Karavanskiı, V. A.

Publication type:

Article

Gamma-induced metastable states of doped, amorphous, hydrated silicon.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 222, doi. 10.1134/1.1187346

By:

Ablova, M. S.;
Kulikov, G. S.;
Persheev, S. K.

Publication type:

Article

Subthreshold characteristics of electrostatically controlled transistors and thyristors. 1. Shallow planar gate.

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 225, doi. 10.1134/1.1187347

By:

Kyuregyan, A. S.;
Yurkov, S. N.

Publication type:

Article