Kinetics of the accumulation of radiation defects during the high-dose electron irradiation of Pb[sub 1-x]Sn[sub x]Se alloys.
- Published in:
- Semiconductors, 1998, v. 32, n. 12, p. 1257, doi. 10.1134/1.1187610
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 12
Results: 15
1
2
Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon.
- Published in:
- Semiconductors, 1998, v. 32, n. 12, p. 1261, doi. 10.1134/1.1187611
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- Publication type:
- Article
3
Model of the redistribution of erbium during the solid-phase epitaxial crystallization of silicon.
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- Semiconductors, 1998, v. 32, n. 12, p. 1266, doi. 10.1134/1.1187612
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- Publication type:
- Article
4
Density-of-states anomaly and tunneling conductance of Au/p-GaAs[sub 0.94]Sb[sub 0.06] contacts near the metal–insulator transition.
- Published in:
- Semiconductors, 1998, v. 32, n. 12, p. 1270, doi. 10.1134/1.1187613
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- Publication type:
- Article
5
Kinetics of electric field screening in a space-charge region with a leakage channel and low-temperature conductance of surface channels in high-resistivity n-Si.
- Published in:
- Semiconductors, 1998, v. 32, n. 12, p. 1277, doi. 10.1134/1.1187614
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- Publication type:
- Article
6
Macroscopic ion traps at the silicon-oxide interface.
- Published in:
- Semiconductors, 1998, v. 32, n. 12, p. 1284, doi. 10.1134/1.1187615
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- Publication type:
- Article
7
Manifestations of the deneutralization of mobile charges in SiO[sub 2] in the spectroscopy of the silicon-oxide interface.
- Published in:
- Semiconductors, 1998, v. 32, n. 12, p. 1289, doi. 10.1134/1.1187616
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- Publication type:
- Article
8
Transformation of nonradiative recombination centers in GaAs/AlGaAs quantum well structures upon treatment in a CF[sub 4] plasma followed by low-temperature annealing.
- Published in:
- Semiconductors, 1998, v. 32, n. 12, p. 1293, doi. 10.1134/1.1187617
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- Publication type:
- Article
9
Weak localization and intersubband transitions in δ-doped GaAs.
- Published in:
- Semiconductors, 1998, v. 32, n. 12, p. 1299, doi. 10.1134/1.1187618
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- Publication type:
- Article
10
Quantum corrections to the conductivity of a two-dimensional system with antidots.
- Published in:
- Semiconductors, 1998, v. 32, n. 12, p. 1304, doi. 10.1134/1.1187619
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- Publication type:
- Article
11
Transient processes in photocathodes at high laser intensities.
- Published in:
- Semiconductors, 1998, v. 32, n. 12, p. 1309, doi. 10.1134/1.1187620
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- Publication type:
- Article
12
Features of the current-voltage characteristics of long semiconductor structures under ultrahigh-level double-injection conditions.
- Published in:
- Semiconductors, 1998, v. 32, n. 12, p. 1318, doi. 10.1134/1.1187621
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- Publication type:
- Article
13
Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region.
- Published in:
- Semiconductors, 1998, v. 32, n. 12, p. 1323, doi. 10.1134/1.1187622
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- Publication type:
- Article
14
Solomon Meerovich Ryvkin (On his 80th Birthday).
- Published in:
- Semiconductors, 1998, v. 32, n. 12, p. 1328, doi. 10.1134/1.1187624
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- Publication type:
- Article
15
Erratum: Autosolitons in InSb in a magnetic field [Semiconductors 32, 625–628 (June 1988)].
- Published in:
- 1998
- By:
- Publication type:
- Correction Notice