Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 11
Results: 25
Chalcogenide passivation of III–V semiconductor surfaces.
- Published in:
- Semiconductors, 1998, v. 32, n. 11, p. 1141, doi. 10.1134/1.1187580
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- Publication type:
- Article
Scanning electron microscopy of long-wavelength laser structures.
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- Semiconductors, 1998, v. 32, n. 11, p. 1157
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- Publication type:
- Article
Formation of Se[sub 2] quasimolecules in selenium-doped silicon.
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- Semiconductors, 1998, v. 32, n. 11, p. 1162, doi. 10.1134/1.1187582
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- Publication type:
- Article
Experimental study of the transverse Ettingshausen–Nernst effect and thermoelectric power in the presence of a large temperature gradient.
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- Semiconductors, 1998, v. 32, n. 11, p. 1168, doi. 10.1134/1.1187583
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- Publication type:
- Article
Nonlinear waves of interacting charge carriers in semiconductors.
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- Semiconductors, 1998, v. 32, n. 11, p. 1170, doi. 10.1134/1.1187584
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- Publication type:
- Article
The magnetoplasma effect in single crystals of antimony at T>=80 K.
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- Semiconductors, 1998, v. 32, n. 11, p. 1173, doi. 10.1134/1.1187585
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- Publication type:
- Article
Influence of crystal orientation of the growth surface due to molecular beam epitaxy on the optical properties of Si-doped GaAs layers.
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- Semiconductors, 1998, v. 32, n. 11, p. 1175, doi. 10.1134/1.1187586
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- Publication type:
- Article
Effect of electron-phonon energy exchange on thermal wave propagation in semiconductors.
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- Semiconductors, 1998, v. 32, n. 11, p. 1179, doi. 10.1134/1.1187587
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- Publication type:
- Article
Nature of the donor action of Gd impurity in crystals of lead and tin telluride.
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- Semiconductors, 1998, v. 32, n. 11, p. 1185, doi. 10.1134/1.1187588
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- Publication type:
- Article
Effect of laser-induced defects on luminescence in InP crystals.
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- Semiconductors, 1998, v. 32, n. 11, p. 1187, doi. 10.1134/1.1187589
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- Publication type:
- Article
Study of the dynamical characteristics of an insulator–semiconductor interface.
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- Semiconductors, 1998, v. 32, n. 11, p. 1190, doi. 10.1134/1.1187590
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- Publication type:
- Article
Effect of hydrogenation on the properties of metal–GaAs Schottky barrier contacts.
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- Semiconductors, 1998, v. 32, n. 11, p. 1196, doi. 10.1134/1.1187591
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- Publication type:
- Article
Electrical characteristics of silicon–rare-earth fluoride layered switching structures.
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- Semiconductors, 1998, v. 32, n. 11, p. 1201, doi. 10.1134/1.1187592
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- Publication type:
- Article
The spectrum of real-space indirect magnetoexcitons.
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- Semiconductors, 1998, v. 32, n. 11, p. 1206, doi. 10.1134/1.1187593
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- Publication type:
- Article
Resonant tunneling dynamics of heterostructures based on semiconductors with two-valley spectra.
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- Semiconductors, 1998, v. 32, n. 11, p. 1214, doi. 10.1134/1.1187594
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- Publication type:
- Article
Effect of ion dose and annealing mode on photoluminescence from SiO[sub 2] implanted with Si ions.
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- Semiconductors, 1998, v. 32, n. 11, p. 1222, doi. 10.1134/1.1187595
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- Publication type:
- Article
Effect of size dispersion on the optical absorption of an ensemble of semiconductor quantum dots.
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- Semiconductors, 1998, v. 32, n. 11, p. 1229, doi. 10.1134/1.1187596
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- Publication type:
- Article
Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 μm) in erbium-doped a-Si:H films.
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- Semiconductors, 1998, v. 32, n. 11, p. 1234, doi. 10.1134/1.1187597
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- Publication type:
- Article
Erratum: Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra [Semiconductors 32, 423–427 (April 1998)].
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- 1998
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- Publication type:
- Correction Notice
Influence of internal mechanical stresses on the characteristics of GaAs light-emitting diodes.
- Published in:
- Semiconductors, 1998, v. 32, n. 11, p. 1242, doi. 10.1134/1.1187599
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- Publication type:
- Article
Appearance of negative resistance in p-n junction structures in a microwave field.
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- Semiconductors, 1998, v. 32, n. 11, p. 1248, doi. 10.1134/1.1187600
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- Publication type:
- Article
In memory of Yuliı Ivanovich Ukhanov.
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- 1998
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- Publication type:
- Obituary
In memory of Sergeı Ivanovich Radautsan.
- Published in:
- Semiconductors, 1998, v. 32, n. 11, p. 1253
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- Publication type:
- Article
Influence of the deposition and annealing conditions on the optical properties of amorphous silicon.
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- Semiconductors, 1998, v. 32, n. 11, p. 1239, doi. 10.1134/1.1187598
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- Publication type:
- Article
Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, No. 10, 1048 (October 1998)].
- Published in:
- 1998
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- Publication type:
- Erratum