Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 10
Results: 28
Activation and distribution of silicon implanted in gallium arsenide as a result of isothermal radiation annealing.
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- Semiconductors, 1998, v. 32, n. 10, p. 1029, doi. 10.1134/1.1187559
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- Article
Equilibrium of native point defects in tin dioxide.
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- Semiconductors, 1998, v. 32, n. 10, p. 1033, doi. 10.1134/1.1187560
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Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy.
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- Semiconductors, 1998, v. 32, n. 10, p. 1036, doi. 10.1134/1.1187561
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Photoconductivity of copper-compensated gallium phosphide.
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- Semiconductors, 1998, v. 32, n. 10, p. 1040, doi. 10.1134/1.1187562
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Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters.
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- Semiconductors, 1998, v. 32, n. 10, p. 1044, doi. 10.1134/1.1187563
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Study of GaN thin layers subjected to high-temperature rapid thermal annealing.
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- Semiconductors, 1998, v. 32, n. 10, p. 1048, doi. 10.1134/1.1187579
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Nitrogen divacancies — the possible cause of the “yellow band” in the luminescence spectra of GaN.
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- Semiconductors, 1998, v. 32, n. 10, p. 1054, doi. 10.1134/1.1187564
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- Article
A new recombination center in heavily doped GaAs : Zn grown by liquid-phase epitaxy.
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- Semiconductors, 1998, v. 32, n. 10, p. 1057, doi. 10.1134/1.1187565
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Effect of In doping on the kinetic coefficients in solid solutions of the system (Pb[sub z]Sn[sub 1-z])[sub 0.95]Ge[sub 0.05]Te.
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- Semiconductors, 1998, v. 32, n. 10, p. 1062, doi. 10.1134/1.1187566
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- Article
Differential methods for determination of deep-level parameters from recombination currents of p–n junctions.
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- Semiconductors, 1998, v. 32, n. 10, p. 1065, doi. 10.1134/1.1187567
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Experimental corrections for the hot hole distribution function in germanium in crossed electric and magnetic fields.
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- Semiconductors, 1998, v. 32, n. 10, p. 1069, doi. 10.1134/1.1187568
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Influence of nonuniform spatial distribution of nonequilibrium carriers on the edge emission spectra of direct-gap semiconductors.
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- Semiconductors, 1998, v. 32, n. 10, p. 1072, doi. 10.1134/1.1187569
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- Article
Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment.
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- Semiconductors, 1998, v. 32, n. 10, p. 1075, doi. 10.1134/1.1187570
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- Article
Photoelectric properties of GaN/GaP heterostructures.
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- Semiconductors, 1998, v. 32, n. 10, p. 1077, doi. 10.1134/1.1187571
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- Article
Photoluminescence of the space charge region of metal–zinc selenide contacts.
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- Semiconductors, 1998, v. 32, n. 10, p. 1080, doi. 10.1134/1.1187572
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- Article
The nature of the deep levels responsible for photoelectric memory in GaAs/AlGaAs multilayer quantum-well structures.
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- Semiconductors, 1998, v. 32, n. 10, p. 1082, doi. 10.1134/1.1187573
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- Article
Weak localization in p-type quantum wells.
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- Semiconductors, 1998, v. 32, n. 10, p. 1087, doi. 10.1134/1.1187574
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Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots.
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- Semiconductors, 1998, v. 32, n. 10, p. 1096, doi. 10.1134/1.1187575
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- Article
Electron-hole Coulomb interaction in InGaN quantum dots.
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- Semiconductors, 1998, v. 32, n. 10, p. 1101, doi. 10.1134/1.1187576
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- Article
Shallow acceptors in strained multiquantum-well Ge/Ge1-xSix heterostructures.
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- Semiconductors, 1998, v. 32, n. 10, p. 1106, doi. 10.1134/1.1187577
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- Article
Potential difference and photovoltaic effect arising from distortion of the electron wave function in a GaAs quantum well with a thin AlGaAs barrier.
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- Semiconductors, 1998, v. 32, n. 10, p. 1111, doi. 10.1134/1.1187578
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Effect of partial ordering of a two-dimensional system of scatterers on the anisotropy of its kinetic coefficients.
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- Semiconductors, 1998, v. 32, n. 10, p. 1116, doi. 10.1134/1.1187540
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- Article
Polarization of in-plane photoluminescence from InAs / Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy.
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- Semiconductors, 1998, v. 32, n. 10, p. 1119, doi. 10.1134/1.1187541
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Doping and impurity compensation by ion implantation in a-SiGe films.
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- Semiconductors, 1998, v. 32, n. 10, p. 1125, doi. 10.1134/1.1187542
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Long-term structural relaxation and photoinduced degradation in a-Si : H.
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- Semiconductors, 1998, v. 32, n. 10, p. 1128, doi. 10.1134/1.1187543
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Heterogeneity and photoconductivity kinetics in amorphous hydrogenated silicon.
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- Semiconductors, 1998, v. 32, n. 10, p. 1131, doi. 10.1134/1.1187544
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Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures.
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- Semiconductors, 1998, v. 32, n. 10, p. 1134, doi. 10.1134/1.1187545
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Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers.
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- Semiconductors, 1998, v. 32, n. 10, p. 1137, doi. 10.1134/1.1187546
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