Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 10

Results: 28

Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1096, doi. 10.1134/1.1187575

By:

Brunkov, P. N.;
Suvorova, A. A.;
Bert, N. A.;
Kovsh, A. R.;
Zhukov, A. E.;
Egorov, A. Yu.;
Ustinov, V. M.;
Tsatsul’nikov, A. F.;
Ledentsov, N. N.;
Kop’ev, P. S.;
Konnikov, S. G.;
Eaves, L.;
Main, P. S.

Publication type:

Article

Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1036, doi. 10.1134/1.1187561

By:

Chaldyshev, V. V.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Bert, N. A.;
Kunitsyn, A. E.;
Musikhin, Yu. G.;
Tret’yakov, V. V.;
Werner, P.

Publication type:

Article

Photoconductivity of copper-compensated gallium phosphide.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1040, doi. 10.1134/1.1187562

By:

Pribylov, N. N.;
Rembeza, S. I.;
Spirin, A. I.;
Buslov, V. A.;
Sushkov, S. A.

Publication type:

Article

Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1044, doi. 10.1134/1.1187563

By:

Brunkov, P. N.;
Chaldyshev, V. V.;
Bert, N. A.;
Suvorova, A. A.;
Konnikov, S. G.;
Chernigovskiı, A. V.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Activation and distribution of silicon implanted in gallium arsenide as a result of isothermal radiation annealing.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1029, doi. 10.1134/1.1187559

By:

Ardyshev, V. M.;
Ardyshev, M. V.

Publication type:

Article

Equilibrium of native point defects in tin dioxide.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1033, doi. 10.1134/1.1187560

By:

Bogdanov, K. P.;
Dimitrov, D. Ts.;
Lutskaya, O. F.;
Tairov, Yu. M.

Publication type:

Article

Study of GaN thin layers subjected to high-temperature rapid thermal annealing.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1048, doi. 10.1134/1.1187579

By:

Katsavets, N.I.;
Laws, G. M.;
Harrison, I.;
Larkins, E. C.;
Benson, T. M.;
Cheng, T. S.;
Foxon, C. T.

Publication type:

Article

Weak localization in p-type quantum wells.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1087, doi. 10.1134/1.1187574

By:

Averkiev, N. S.;
Golub, L. E.;
Pikus, G. E.

Publication type:

Article

Electron-hole Coulomb interaction in InGaN quantum dots.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1101, doi. 10.1134/1.1187576

By:

Bugrov, V. E.;
Konstantinov, O. V.

Publication type:

Article

Shallow acceptors in strained multiquantum-well Ge/Ge1-xSix heterostructures.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1106, doi. 10.1134/1.1187577

By:

Aleshkin, V. Ya.;
Gavrilenko, V. I.;
Erofeeva, I. V.;
Kozlov, D. V.;
Moldavskaya, M. D.;
Kuznetsov, O. A.

Publication type:

Article

Nitrogen divacancies — the possible cause of the “yellow band” in the luminescence spectra of GaN.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1054, doi. 10.1134/1.1187564

By:

Yunovich, A. É.

Publication type:

Article

A new recombination center in heavily doped GaAs : Zn grown by liquid-phase epitaxy.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1057, doi. 10.1134/1.1187565

By:

Zhuravlev, K. S.;
Shamirzaev, T. S.;
Yakusheva, N. A.;
Petrenko, I. P.

Publication type:

Article

Effect of In doping on the kinetic coefficients in solid solutions of the system (Pb[sub z]Sn[sub 1-z])[sub 0.95]Ge[sub 0.05]Te.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1062, doi. 10.1134/1.1187566

By:

Nemov, S. A.;
Proshin, V. I.;
Nakhmanson, S. M.

Publication type:

Article

Differential methods for determination of deep-level parameters from recombination currents of p–n junctions.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1065, doi. 10.1134/1.1187567

By:

Bulyarskiı, S. V.;
Grushko, N. S.;
Lakalin, A. V.

Publication type:

Article

Experimental corrections for the hot hole distribution function in germanium in crossed electric and magnetic fields.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1069, doi. 10.1134/1.1187568

By:

Tulupenko, V. N.

Publication type:

Article

Influence of nonuniform spatial distribution of nonequilibrium carriers on the edge emission spectra of direct-gap semiconductors.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1072, doi. 10.1134/1.1187569

By:

Lukashevich, P. G.

Publication type:

Article

Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1075, doi. 10.1134/1.1187570

By:

Agekyan, V. F.;
Ivanov-Omskiı, V. I.;
Knyazevskiı, V. N.;
Rud’, Yu. V.;
Rud’, V. Yu.

Publication type:

Article

Photoelectric properties of GaN/GaP heterostructures.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1077, doi. 10.1134/1.1187571

By:

Botnaryuk, V. M.;
Raevskiı, S. D.;
Bel’kov, V. V.;
Zhilyaev, Yu. V.;
Rud’, Yu. V.;
Fedorov, L. M.;
Rud’, V. Yu.

Publication type:

Article

The nature of the deep levels responsible for photoelectric memory in GaAs/AlGaAs multilayer quantum-well structures.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1082, doi. 10.1134/1.1187573

By:

Ovsyuk, V. N.;
Dem’yanenko, M. A.;
Shashkin, V. V.;
Toropov, A. I.

Publication type:

Article

Photoluminescence of the space charge region of metal–zinc selenide contacts.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1080, doi. 10.1134/1.1187572

By:

Makhniı, V. P.;
Sletov, M. M.

Publication type:

Article

Potential difference and photovoltaic effect arising from distortion of the electron wave function in a GaAs quantum well with a thin AlGaAs barrier.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1111, doi. 10.1134/1.1187578

By:

Pozhela, Yu.;
Pozhela, K.

Publication type:

Article

Polarization of in-plane photoluminescence from InAs / Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1119, doi. 10.1134/1.1187541

By:

Aleshkin, V. Ya.;
Zvonkov, B. N.;
Malkina, I. G.;
Saf’yanov, Yu. N.;
Chernov, A. L.;
Filatov, D. O.

Publication type:

Article

Effect of partial ordering of a two-dimensional system of scatterers on the anisotropy of its kinetic coefficients.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1116, doi. 10.1134/1.1187540

By:

Averkiev, N. S.;
Monakhov, A. M.;
Shik, A. Yu.;
Koenraad, P. M.

Publication type:

Article

Doping and impurity compensation by ion implantation in a-SiGe films.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1125, doi. 10.1134/1.1187542

By:

Ershov, A. V.;
Mashin, A. I.;
Khokhlov, A. F.

Publication type:

Article

Long-term structural relaxation and photoinduced degradation in a-Si : H.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1128, doi. 10.1134/1.1187543

By:

Kougia, K. V.;
Pevtsov, A. B.

Publication type:

Article

Heterogeneity and photoconductivity kinetics in amorphous hydrogenated silicon.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1131, doi. 10.1134/1.1187544

By:

Kougia, K. V.;
Terukov, E. I.;
Fus, V.

Publication type:

Article

Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1134, doi. 10.1134/1.1187545

By:

Kurova, I. A.;
Ormont, N. N.;
Golikova, O. A.;
Kazanin, M. M.

Publication type:

Article

Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1137, doi. 10.1134/1.1187546

By:

Ivanov, S. V.;
Toropov, A. A.;
Sorokin, S. V.;
Shubina, T. V.;
Il’inskaya, N. D.;
Lebedev, A. V.;
Sedova, I. V.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Lugauer, H.-J.;
Reuscher, G.;
Keim, M.;
Fischer, F.;
Waag, A.;
Landwehr, G.

Publication type:

Article