Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 1

Results: 24

Characterization of GaAs/InxGa1_xAS quantum-dot heterostructures by electrical and optical methods

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 99, doi. 10.1134/1.1187370

By:

Aleshkin, V. Ya.;
Gaponova, D. M.;
Gusev, S. A.;
Danil'tsev, V. M.;
Krasil'nik, Z. F.;
Murel, A. V.;
Paramonov, L. V.;
Revin, D. G.;
Khrykin, O. I.;
Shashkin, V. I.

Publication type:

Article

Interimpurity light absorption in thin wires of Ill-V-type semiconductors

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 96, doi. 10.1134/1.1187369

By:

Dzhotyan, A. P.;
Kazaryan, E. M.;
Chirkinyan, A. S.

Publication type:

Article

Exciton polaritons in long-period quantum-well structures

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 90, doi. 10.1134/1.1187364

By:

Vladimirova, M. R.;
Ivchenko, E. L.;
Kavokin, A. V.

Publication type:

Article

Relation between the optoelectronic parameters of amorphous hydrogenated silicon films deposited at high temperatures and their microstructure

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 109, doi. 10.1134/1.1187372

By:

Adriaenssens, G. J.;
Grevendonk, W.;
Golikova, O. A.

Publication type:

Article

Generation in a microstrip-resonator-stabilized double-barrier resonant tunneling structure

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 112, doi. 10.1134/1.1187365

By:

Beloushkin, A. A.;
Efimov, Yu. A.;
Ignat'ev, A. S.;
Karuzskii, A. L.;
Murzin, V. N.;
Perestoronin, A. V.;
Rasulova, G. K.;
Tskhovrebov, A. M.;
Chizhevskii, E. G.

Publication type:

Article

Relaxation of light-induced metastable state of boron-doped p-type a-Si-H

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 105, doi. 10.1134/1.1187371

By:

Kazanskii, A. G.;
Larina, E. V.

Publication type:

Article

Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 84, doi. 10.1134/1.1187363

By:

Tsatsul'nikov, A. F.;
Volovik, B. V.;
Ledentsov, N. N.;
Maksimov, M. V.;
Egorov, A. Yu.;
Zhukov,, A. E.;
Kovsh, A. R.;
Ustinov, V. M.;
Chen, Chao;
Kop'ev, P. S.;
AIferov, Zh. I.;
Petrov, V. N.;
Tsirlin,, G. E.;
Bimberg, D.

Publication type:

Article

Commensurate and incommensurate indium phases on a (111)A InAs surface

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 78, doi. 10.1134/1.1187368

By:

Galitsyn, Yu. G.;
Mansurov, V. G.;
Marahovka, I. I.;
Petrenko, I. P.

Publication type:

Article

Temperature anomalies of the work function and relaxation of the surface conductivity of n-type Si in the presence of structural defects

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 71, doi. 10.1134/1.1187362

By:

Bochkareva, N. I.;
Klochkov, A. V.

Publication type:

Article

Photoelectric properties of structures based on TIInS2 single crystals

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 67

By:

lida, S.;
Mamedov, N.;
Rud', V. Yu.;
Rud', Yu. V.

Publication type:

Article

Photoelectric properties of n-CdS/p-lnP heterojunctions

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 61, doi. 10.1134/1.1187360

By:

Botnaryuk, V. M.;
Gorchak, L. V.;
Diaconu, I. I.;
Rud', V. Yu.;
Rud', Yu. V.

Publication type:

Article

Calculation of the Schottky barrier height at the early stage of formation of the (silicon carbide)-(metallic submonolayer) contact

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 58, doi. 10.1134/1.1187359

By:

Davydov, S. Yu.;
Lebedev, A. A.;
Tikhonov, S. K.

Publication type:

Article

Impact ionization luminescence of InGaN/AIGaN/GaN p-n-heterostructures

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 54, doi. 10.1134/1.1187358

By:

Kovalev, A. N.;
Manyakhin, F. I.;
Kudryashov, V. E.;
Turkin, A. N.;
Yunovich, A. E.

Publication type:

Article

On C-V profiling near an isotypic heterojunction

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 52, doi. 10.1134/1.1187357

By:

Zubkov, V. I.;
Melnik, M. A.;
Solomonov, A. V.

Publication type:

Article

Effect of selenium on the galvanomagnetic properties of the diluted magnetic semiconductor Hg1 _ xMnxTe1 _ ySey

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 49, doi. 10.1134/1.1187367

By:

Kulbachinskii, V. A.;
Churilov, I. A.;
Maryanchuk, P. D.;
Lunin, R. A.

Publication type:

Article

Manganese-related recombination centers in epitaxial GaAs grown from a bismuth melt

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 43, doi. 10.1134/1.1187366

By:

Zhuravlev, K. S.;
Shamirzaev, T.;
Yakusheva, N. A.

Publication type:

Article

Intrinsic defect states in PbTe single-crystal films grown by laser-modulated epitaxy

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 40, doi. 10.1134/1.1187373

By:

Plyatsko, S. V.

Publication type:

Article

Optical characteristics of 1.18-eV luminescence band complexes in n-GaAs:Sn(Si): results of a photoluminescence study with polarized resonant excitation

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 33, doi. 10.1134/1.1187356

By:

Gutkin, A. A.;
Reshchikov, M. A.;
Sedov, V. E.;
Piotrowski, T.;
Pultorak, J.

Publication type:

Article

Influence of the intensity of 7 irradiation on the photoluminescence of GaAs:Te

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 31, doi. 10.1134/1.1187355

By:

Dubovik, V. I.;
Bogdanova, V. A.;
Davletkil'deev, N. A.;
Semikolenova, N. A.;
Shutyak, O. A.

Publication type:

Article

Filling of dislocation levels in strong electric fields

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 29, doi. 10.1134/1.1187354

By:

Veliev, Z. A.

Publication type:

Article

Photoluminescence of cadmium telluride recrystallized by nanosecond pulsed laser irradiation

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 26, doi. 10.1134/1.1187353

By:

Babentsov, V. N.;
Tarbaev, N. I.

Publication type:

Article

High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 19, doi. 10.1134/1.1187352

By:

Faleev, N. N.;
Chaldyshev, V. V.;
Kunitsyn, A. E.;
Tret'yakov, V. V.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Nonequilibrium segregation of phosphorus in the system silicon dioxide-silicon

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 15, doi. 10.1134/1.1187351

By:

Aleksandrov, O. V.;
Afonin, N. N.

Publication type:

Article

The history and future of semiconductor heterostructures

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 1, doi. 10.1134/1.1187350

By:

Alferov, Zh. I.

Publication type:

Article