Works matching IS 10637826 AND DT 1997 AND VI 31 AND IP 9

Results: 25

Possibility of increasing the thermal stability of Si by doping with transition or rare-earth metals.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 875, doi. 10.1134/1.1187158

By:

Glazov, V. M.;
Timoshina, G. G.;
Mikhaılova, M. S.;
Potemkin, A. Ya.

Publication type:

Article

Optical spectroscopy of excitonic states in zinc diarsenide.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 879, doi. 10.1134/1.1187147

By:

Mudryı, A. V.;
Trukhan, V. M.;
Patuk, A. I.;
Shakin, I. A.;
Marenkin, S. F.

Publication type:

Article

The valence band structure in chalcopyrite Cu(In,Ga)Se[sub 2] films.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 882, doi. 10.1134/1.1187269

By:

Kindyak, A. S.;
Kindyak, V. V.;
Rud’, Yu. V.

Publication type:

Article

Electronic structure of the Er–O[sub 6] complex in silicon.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 886

By:

Il’in, N. P.;
Masterov, V. F.

Publication type:

Article

Quenching of EL2 defect-induced luminescence in gallium arsenide by copper atoms.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 893, doi. 10.1134/1.1187149

By:

Vorobkalo, F. M.;
Glinchuk, K. D.;
Prokhorovich, A. V.

Publication type:

Article

Investigation of the parameters of deep centers in n-6HSiC epitaxial layers obtained by gas-phase epitaxy.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 896, doi. 10.1134/1.1187150

By:

Lebedev, A. A.;
Davydov, D. V.

Publication type:

Article

Anomalous magnetic properties of the solid solutions (InSb[sub 1-x](CdTe)[sub x] at low temperatures.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 899, doi. 10.1134/1.1187270

By:

Brodovoı, A. V.;
Brodovoı, V. A.;
Knorozok, L. M.;
Kolesnichenko, V. G.;
Kolesnik, S. P.

Publication type:

Article

Luminescence spectra of blue and green light-emitting diodes based on multilayer InGaN/AlGaN/GaN heterostructures with quantum wells.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 901, doi. 10.1134/1.1187275

By:

Zolina, K. G.;
Kudryashov, V. E.;
Turkin, A. N.;
Yunovich, A. É.

Publication type:

Article

Polarization photoluminescence study of the complex V[sub Ga]Te[sub As] in n-type GaAs in the temperature range 77–230 K.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 908, doi. 10.1134/1.1187267

By:

Gutkin, A. A.;
Reshchikov, M. A.;
Sedov, V. E.

Publication type:

Article

The problem of intermediate temperatures or electric fields in the scattering of hot electrons by acoustic phonons.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 916, doi. 10.1134/1.1187151

By:

Kachlishvili, Z. S.;
Kukutariya, L. G.

Publication type:

Article

Mechanisms of current flow in zinc telluride–zinc selenide heterojunctions.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 918, doi. 10.1134/1.1187152

By:

Baranyuk, V. E.;
Makhniı, V. P.

Publication type:

Article

Photoelectric properties of GaAs/InAs heterostructures with quantum dots.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 941, doi. 10.1134/1.1187139

By:

Zvonkov, B. N.;
Malkina, I. G.;
Lin’kova, E. R.;
Aleshkin, V. Ya.;
Karpovich, I. A.;
Filatov, D. O.

Publication type:

Article

Investigation of the heteroexpitaxial structures {p-3C/n-6H}-SiC.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 926, doi. 10.1134/1.1187154

By:

Lebedev, A. A.;
Savkina, N. S.;
Tregubova, A. S.;
Shcheglov, M. P.

Publication type:

Article

Radiative recombination rate in quantum-well structures in the model without k-selection.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 929, doi. 10.1134/1.1187155

By:

Afonenko, A. A.;
Manak, I. S.;
Shevtsov, V. A.;
Kononenko, V. K.

Publication type:

Article

Contact-free determination of the parameters of a 2D electron gas in GaAs/AlGaAs heterostructures.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 933, doi. 10.1134/1.1187156

By:

Drichko, I. L.;
Smirnov, I. Yu.

Publication type:

Article

Binding energy of Coulomb acceptors in quantum-well systems.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 936, doi. 10.1134/1.1187138

By:

Belyavskiı, V. I.;
Gol’dfarb, M. V.;
Kopaev, Yu. V.

Publication type:

Article

Resonant interaction of electrons with an rf electric field in asymmetric double-barrier structures.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 921, doi. 10.1134/1.1187153

By:

Golant, E. I.;
Pashkovskiı, A. B.

Publication type:

Article

Quantum-dot lasers: Principal components of the threshold current density.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 947, doi. 10.1134/1.1187140

By:

Zaıtsev, S. V.;
Gordeev, N. Yu.;
Kopchatov, V. I.;
Georgievskiı, A. M.;
Ustinov, V. M.;
Zhukov, A. E.;
Egorov, A. Yu.;
Kovsh, A. R.;
Ledentsov, N. N.;
Kop’ev, P. S.;
Alfërov, Zh. I.;
Bimberg, D.

Publication type:

Article

The effect of a “Coulomb well” on the absorption and magnetoabsorption spectra of strained InGaAs/GaAs heterostructures.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 950, doi. 10.1134/1.1187141

By:

Kavokin, A. V.;
Kokhanovskiı, S. I.;
Nesvizhkiı, A. I.;
Sasin, M. É.;
Seısyan, R. P.;
Ustinov, V. M.;
Egorov, A. Yu.;
Zhukov, A. E.;
Gupalov, S. V.

Publication type:

Article

The effect of a longitudinal magnetic field on electronic intersubband transitions in asymmetric heterostructures.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 961

By:

Vas’ko, F. T.;
Kis, G. Ya.

Publication type:

Article

Radiation hardness of porous silicon.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 966, doi. 10.1134/1.1187143

By:

Ushakov, V. V.;
Dravin, V. A.;
Mel’nik, N. N.;
Karavanskiı, V. A.;
Konstantinova, E. A.;
Timoshenko, V. Yu.

Publication type:

Article

Study of porous silicon obtained by krypton ion implantation and laser annealing.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 970, doi. 10.1134/1.1187144

By:

Galyautdinov, M. F.;
Kurbatova, N. V.;
Buinova, É. Yu.;
Shtyrkov, E. I.;
Bukharaev, A. A.

Publication type:

Article

Photoluminescence and photoexcitation spectra of porous silicon subjected to anodic oxidation and etching.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 974, doi. 10.1134/1.1187145

By:

Filippov, V. V.;
Pershukevich, P. P.;
Bondarenko, V. P.

Publication type:

Article

Comparison of equilibrium and nonequilibrium charge carrier mobilities in polycrystalline synthetic diamond and amorphous diamond-like carbon films.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 980, doi. 10.1134/1.1187146

By:

Pleskov, Yu. V.;
Tameev, A. R.;
Varnin, V. P.;
Teremetskaya, I. G.;
Baranov, A. M.

Publication type:

Article

Recombination in the space charge region and its effect on the transmittance of bipolar transistors.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 983, doi. 10.1134/1.1187157

By:

Bulyarskii, S. V.;
Grushko, N. S.;
Somov, A. I.;
Lakalin, A. V.

Publication type:

Article