Works matching IS 10637826 AND DT 1997 AND VI 31 AND IP 8

Results: 32

Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 763, doi. 10.1134/1.1187244

By:

Voronina, T. I.;
Lagunova, T. S.;
Mikhaılova, M. P.;
Moiseev, K. D.;
Sipovskaya, M. A.;
Yakovlev, Yu. P.

Publication type:

Article

Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 768, doi. 10.1134/1.1187245

By:

Tsyrlin, G. É.;
Petrov, V. N.;
Dubrovskiı, V. G.;
Polyakov, N. K.;
Tipisev, S. Ya.;
Golubok, A. O.;
Ledentsov, N. N.

Publication type:

Article

Two sources of excitation of photoluminescence of porous silicon.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 773, doi. 10.1134/1.1187246

By:

Korsunskaya, N. E.;
Torchinskaya, T. V.;
Dzhumaev, B. R.;
Khomenkova, L. Yu.;
Bulakh, B. M.

Publication type:

Article

Luminescence properties of InAs/GaAs quantum dots prepared by submonolayer migration-stimulated epitaxy.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 777, doi. 10.1134/1.1187247

By:

Tsyrlin, G. É.;
Petrov, V. N.;
Maksimov, M. V.;
Ledentsov, N. N.

Publication type:

Article

Hall effect in quasi-two-dimensional superlattices in nonquantizing magnetic and strong electric fields.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 781, doi. 10.1134/1.1187248

By:

Shmelev, G. M.;
Épshteın, É. M.;
Maglevannyı, I. I.

Publication type:

Article

Nonstationary thermoelectric power in multilayered structures with p–n junctions.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 784, doi. 10.1134/1.1187249

By:

Agarev, V. N.

Publication type:

Article

Si/Si[sub 1-x]Ge[sub x] epitaxial layers and superlattices. Growth and structural characteristics.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 786, doi. 10.1134/1.1187250

By:

Sizov, F. F.;
Klad’ko, V. P.;
Plyatsko, S. V.;
Shevlyakov, A. P.;
Kozyrev, Yu. N.;
Ogenko, V. M.

Publication type:

Article

Simple method for reconstructing the doping fine structure in semiconductors from C-V measurements in an electrolytic cell.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 789, doi. 10.1134/1.1187251

By:

Shashkin, V. I.;
Karetnikova, I. R.;
Murel’, A. V.;
Nefedov, I. M.;
Shereshevskiı, I. A.

Publication type:

Article

Effect of pulsed laser irradiation on the optical characteristics and photoconductivity of the solid solutions CdHgTe.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 793

By:

Golovan’, L. A.;
Kashkarov, P. K.;
Timoshenko, V. Yu.;
Lakeenkov, V. M.

Publication type:

Article

Effect of an electric field on the relaxation of photoconductivity in n-Hg[sub 0.8]Cd[sub 0.2]Te crystals.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 797, doi. 10.1134/1.1187253

By:

Virt, I. S.

Publication type:

Article

Calculation of the size-quantization levels in strained ZnCdSe/ZnSe quantum wells.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 800, doi. 10.1134/1.1187254

By:

Maksimov, M. V.;
Krestnikov, I. L.;
Ivanov, S. V.;
Ledentsov, N. N.;
Sorokin, S. V.

Publication type:

Article

Calculation of the trapping of hot electrons by repulsive centers under the conditions of a needle-type distribution function.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 804, doi. 10.1134/1.1187255

By:

Kachlishvili, Kh. Z.;
Kachlishvili, Z. S.;
Chumburidze, F. G.

Publication type:

Article

Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 806, doi. 10.1134/1.1187256

By:

Kunitsyn, A. E.;
Chaldyshev, V. V.;
Mil’vidskaya, A. G.;
Mil’vidskiı, M. G.

Publication type:

Article

Dependence of the resonant conductivity of symmetric double-barrier structures on the amplitude of rf field.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 809, doi. 10.1134/1.1187257

By:

Golant, E. I.;
Pashkovskiı, A. B.

Publication type:

Article

Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 813, doi. 10.1134/1.1187258

By:

Doshchanov, K. M.

Publication type:

Article

Total external x-ray reflection and infrared spectroscopy study of porous silicon and its aging.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 815, doi. 10.1134/1.1187259

By:

Balagurov, L.A.;
Pavlov, V.F.;
Petrova, E.A.;
Boronina, G.P.

Publication type:

Article

Calculation of 2p levels for thermal double donors in silicon.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 819, doi. 10.1134/1.1187260

By:

Makarenko, L. F.

Publication type:

Article

Conductivity stimulated by temperature oscillations in dissociated cadmium telluride and cadmium sulfide solid solutions.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 823, doi. 10.1134/1.1187261

By:

Belyaev, A. P.;
Rubets, V. P.;
Kalinkin, I. P.

Publication type:

Article

Intrinsic photoconductivity in chromium disilicide epitaxial thin films.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 826, doi. 10.1134/1.1187262

By:

Galkin, N. G.;
Konchenko, A. V.;
Maslov, A. M.

Publication type:

Article

Enhancement of the photovoltaic effect in a two-dimensionally disordered medium.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 829

By:

Éntin, M. V.

Publication type:

Article

InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3–4 μm.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 831, doi. 10.1134/1.1187264

By:

Danilova, T. N.;
Danilova, A. P.;
Ershov, O. G.;
Imenkov, A. H.;
Kolchanova, N. M.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Electron-probe microanalysis of doped PbTe and Pb[sub 0.8]Sn[sub 0.2]Te single crystals.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 835, doi. 10.1134/1.1187265

By:

Bestaev, M. V.;
Gorelik, A. I.;
Moshnikov, V. A.;
Tairov, Yu. M.

Publication type:

Article

Steady-state lux-ampere characteristics of compensated crystals at various excitation intensities.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 838, doi. 10.1134/1.1187238

By:

Lebedev, A. A.

Publication type:

Article

Evolution of static negative differential conductivity in Ga[sub 1-x]Al[sub x]As as a function of the transverse magnetic field and the composition of the solid solution.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 841, doi. 10.1134/1.1187272

By:

Dzamukashvili, G. É.;
Kachlishvili, Z. S.;
Metreveli, N. K.

Publication type:

Article

Inversion of the conduction type of epitaxial films of PbSnTe solid solutions under the influence of laser irradiation at subthreshold power.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 844, doi. 10.1134/1.1187239

By:

Grekov, Yu. B.;
Shlyakhov, T. A.;
Semikolenova, N. A.

Publication type:

Article

Nature of Ec-0.37 eV centers and the formation of high-resistivity layers in n-type silicon.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 847, doi. 10.1134/1.1187266

By:

Naumova, O. V.;
Smirnov, L. S.;
Stas’, V. F.

Publication type:

Article

Formation of oxygen precipitates in silicon.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 852, doi. 10.1134/1.1187240

By:

Antonova, I. V.;
Popov, V. P.;
Shaımeev, S. S.;
Misiuk, A.

Publication type:

Article

Transient photoelectric effect in pure, high-resistivity, highly biased metal-semiconductor and metal-insulator-semiconductor structures.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 857, doi. 10.1134/1.1187241

By:

Reznikov, B. I.

Publication type:

Article

Injection currents in mixed-layer Ga[sub 0.5]In[sub 1.5]S[sub 3] single crystals.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 864, doi. 10.1134/1.1187271

By:

Askerov, I. M.;
Asadov, F. Yu.

Publication type:

Article

Conversion of red and infrared luminescence centers as a result of electron bombardment and annealing of CdS and CdS:Cu single crystals.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 866, doi. 10.1134/1.1187242

By:

Davidyuk, G. E.;
Bogdanyuk, N. S.;
Shavarova, A. P.;
Fedonyuk, A. A.

Publication type:

Article

Acceptors in Cd[sub 1-x]Mn[sub x]Te (x<0.1).

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 869, doi. 10.1134/1.1187243

By:

Vlasenko, A. I.;
Babentsov, V. N.;
Vlasenko, Z. K.;
Svechnikov, S. V.;
Rarenko, I. M.;
Zakharuk, Z. I.;
Nikonyuk, E. S.;
Shlyakhovyı, V. L.

Publication type:

Article

Energy spectrum of n-type Pb[sub 1-x]Sn[sub x]Te (x=0.22) bombarded by neutrons.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 872, doi. 10.1134/1.1187268

By:

Skipetrov, E. P.;
Nekrasova, A. N.;
Ryazanov, A. V.

Publication type:

Article