Works matching IS 10637826 AND DT 1997 AND VI 31 AND IP 7

Results: 33

Effect of impurities with variable valency on the transport phenomena in a quantum well.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 651, doi. 10.1134/1.1187057

By:

Lyapilin, I. I.

Publication type:

Article

Charge-carrier lifetime in Hg[sub 1-x]Cd[sub x]Te (x=0.22) structures grown by molecular-beam epitaxy.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 655, doi. 10.1134/1.1187058

By:

Voıtsekhovskiı, A. V.;
Denisov, Yu. A.;
Kokhanenko, A. P.;
Varavin, V. S.;
Dvoretskiı, S. A.;
Liberman, V. T.;
Mikhailov, N. N.;
Sidorov, Yu. G.

Publication type:

Article

Frenkel’–Poole effect for boron impurity in silicon in strong warming electric fields.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 658, doi. 10.1134/1.1187059

By:

Kozlov, A. M.;
Ryl’kov, V. V.

Publication type:

Article

Measurement of the diffusion length of minority charge carriers using real Schottky barriers.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 661, doi. 10.1134/1.1187060

By:

Dmitruk, N. L.;
Borkovskaya, O. Yu.;
Mamykin, S. V.

Publication type:

Article

Effect of successive implantation of Ag[sup +](Cu[sup +]) and Xe[sup +] ions on the recombination properties of Cd[sub x]Hg[sub 1-x]Te crystals.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 666, doi. 10.1134/1.1187061

By:

Ibragimova, M. I.;
Baryshev, N. S.;
Petukhov, V. Yu.;
Khaıbullin, I. B.

Publication type:

Article

Characteristic features of Raman scattering of light in silicon doped with high krypton doses.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 669, doi. 10.1134/1.1187062

By:

Galyautdinov, M. F.;
Kurbatova, N. V.;
Moiseev, S. A.;
Shtyrkov, E. I.

Publication type:

Article

Simulation of heat and mass transfer during growth of silicon carbide single crystals.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 672, doi. 10.1134/1.1187063

By:

Kirillov, B. A.;
Bakin, A. S.;
Tairov, Yu. M.;
Solnyshkin, S. N.

Publication type:

Article

Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 677, doi. 10.1134/1.1187064

By:

Botnaryuk, V. M.;
Koval’, A. V.;
Simashkevich, A. V.;
Sherban, D. A.;
Rud’, V. Yu.;
Rud’, Yu. V.

Publication type:

Article

Photosensitivity of thin-film ZnO/CdS/Cu(In, Ga)Se[sub 2] solar cells.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 681, doi. 10.1134/1.1187065

By:

Walter, T.;
Rud’, V. Yu.;
Rud’, Yu. V.;
Schock, H. W.

Publication type:

Article

High-temperature annealing and nuclear-transmutation doping of GaAs bombarded by reactor neutrons.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 686, doi. 10.1134/1.1187066

By:

Brudnyı, V. N.;
Novikov, V. A.;
Peshev, V. V.;
Kolin, N. G.;
Noıfekh, A. I.

Publication type:

Article

Characteristic structural features of amorphous hydrated silicon films deposited by direct-currect decomposition of silane in a magnetic field.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 691, doi. 10.1134/1.1187067

By:

Golikova, O. A.;
Kuznetsov, A. N.;
Kudoyarova, V. Kh.;
Kazanin, M. M.

Publication type:

Article

Effect of laser irradiation on the photoconductivity and noise in n-Cd[sub x] Hg[sub 1-x]Te single crystals.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 695, doi. 10.1134/1.1187068

By:

Vlasenko, A. I.;
Gnatyuk, V. A.;
Kopishinskaya, E. P.;
Mozol’, P. E.

Publication type:

Article

Photoelasticity and quadratic permittivity of wide-gap semiconductors.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 698, doi. 10.1134/1.1187069

By:

Davydov, S. Yu.;
Tikhonov, S. K.

Publication type:

Article

Role of spatial localization of a particle during tunneling.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 700, doi. 10.1134/1.1187070

By:

Chuprikov, N. L.

Publication type:

Article

Variation of the optical properties of porous silicon as a result of thermal annealing in vacuum.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 704, doi. 10.1134/1.1187071

By:

Kiselev, V. A.;
Polisadin, S. V.;
Postnikov, A. V.

Publication type:

Article

Electron-hole scattering in p-type silicon with a low charge-carrier injection level.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 707, doi. 10.1134/1.1187072

By:

Mnatsakanov, T. T.;
Pomortseva, L. I.;
Shuman, V. B.

Publication type:

Article

Effect of tin impurity on the photoconductivity kinetics of thin amorphous layers of arsenic selenide.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 710, doi. 10.1134/1.1187073

By:

Iovu, M. S.;
Kolomeıko, E. P.;
Shutov, S. D.

Publication type:

Article

Study of submicron deposits in polycrystalline materials using the internal-friction method.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 714, doi. 10.1134/1.1187074

By:

Andreev, Yu. N.;
Yaroslavtsev, N. P.;
Bestaev, M. V.;
Dimitrov, D. Ts.;
Moshnikov, V. A.;
Tairov, Yu. M.

Publication type:

Article

Mechanism of electroluminescence of porous silicon in electrolytes.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 716, doi. 10.1134/1.1187075

By:

Goryachev, D. N.;
Sreseli, O. M.;
Belyakov, L. V.

Publication type:

Article

Excitonic effects in the photoconductivity of quantum-well Ga[sub x]In[sub 1-x] As/InP structures.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 719, doi. 10.1134/1.1187273

By:

Panov, M. F.;
Pikhtin, A. N.

Publication type:

Article

Lateral association of vertically coupled quantum dots.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 722, doi. 10.1134/1.1187076

By:

Tsatsul’nikov, A. F.;
Egorov, A. Yu.;
Zhukov, A. E.;
Kovsh, A. R.;
Ustinov, V. M.;
Ledentsov, N. N.;
Maksimov, M. V.;
Volovik, B. V.;
Suvorova, A. A.;
Bert, N. A.;
Kop’ev, P. S.

Publication type:

Article

Characteristic features of silicon multijunction solar cells with vertical p–n junctions.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 726, doi. 10.1134/1.1187077

By:

Guk, E. G.;
Nalet, T. A.;
Shvarts, M. Z.;
Shuman, V. B.

Publication type:

Article

1/f noise in strongly doped n-type GaAs under band–band illumination conditions.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 728, doi. 10.1134/1.1187078

By:

D’yakonova, N. V.;
Levinshteın, M. E.;
Rumyantsev, S. L.;
Pascal, F.

Publication type:

Article

Longitudinal photoeffect in In[sub 0.53]Ga[sub 0.47]As p–n junctions.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 733, doi. 10.1134/1.1187079

By:

Slobodchikov, S. V.;
Salikhov, Kh. M.;
Russu, E. V.

Publication type:

Article

Deep centers and negative temperature coefficient of the breakdown voltage of SiC p–n structures.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 735, doi. 10.1134/1.1187080

By:

Lebedev, A. A.;
Ortoland, S.;
Raynaud, C.;
Locatelli, M. L.;
Planson, D.;
Chante, J. P.

Publication type:

Article

Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 738, doi. 10.1134/1.1187081

By:

Terukov, E. I.;
Kuznetsov, A. N.;
Parshin, E. O.;
Weiser, G.;
Kuehne, H.

Publication type:

Article

Viktor Il’ich Fistul’ (On his seventieth birthday).

Published in:: Semiconductors, 1997, v. 31, n. 7, p. 759, doi. 10.1134/1.1187036
Publication type:: Article

A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 743, doi. 10.1134/1.1187083

By:

Avrutskiı, I. A.;
Litovchenko, V. G.

Publication type:

Article

Faraday rotation of light in a microcavity.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 747, doi. 10.1134/1.1187084

By:

Kaliteevskiı, M. A.;
Kavokin, A. V.;
Kop’ev, P. S.

Publication type:

Article

Effect of radiation on the characteristics of MIS structures containing rare-earth oxides.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 752, doi. 10.1134/1.1187085

By:

Fedorenko, Ya. G.;
Otavina, L. A.;
Ledeneva, E. V.;
Sverdlova, A. M.

Publication type:

Article

Calculation of a hierarchical PbS–C superlattice in a multiwell model.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 756, doi. 10.1134/1.1187035

By:

Glushko, E. Ya.;
Evteev, V. N.

Publication type:

Article

Photovoltaic effect in an asymmetric GaAs/AlGaAs nanostructure produced as a result of laser excitation.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 740, doi. 10.1134/1.1187082

By:

Kucherenko, I. V.;
Vodop’yanov, L. K.;
Kadushkin, V. I.

Publication type:

Article

Electronic Phenomena in Chalcogenide Glassy Semiconductors Collective monograph edited by K. D. Tséndin, Nauka, St. Petersburg, 1986, 486 pages.

Published in:

Semiconductors, 1997, v. 31, n. 7, p. 761

By:

Tsendin, K.D.

Publication type:

Article