Works matching IS 10637826 AND DT 1997 AND VI 31 AND IP 5

Results: 31

Threshold effect of local pulsed laser irradiation on the surface state of oxide layers deposited on real germanium surfaces.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 433, doi. 10.1134/1.1187212

By:

Vintsents, S. V.;
Dmitriev, S. G.;
Zakharov, R. A.;
Plotnikov, G. S.

Publication type:

Article

Effect of manganese on radiation degradation of the electric and recombination parameters of a silicon single crystal.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 435, doi. 10.1134/1.1187187

By:

Talipov, F. M.

Publication type:

Article

Faraday rotation angle anisotropy in a Fe-based diluted magnetic semiconductor.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 436, doi. 10.1134/1.1187188

By:

Mel’nichuk, S. V.;
Mel’nichuk, O. S.;
Savchuk, A. I.;
Trifonenko, D. N.

Publication type:

Article

Photoelectric and radiation characteristics of silicon solar cells at high illumination levels and elevated temperatures.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 439, doi. 10.1134/1.1187186

By:

Bakirov, M. Ya.

Publication type:

Article

Distribution of a shallow donor impurity in a p-type CdTe wafer annealed in Cd vapors.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 441, doi. 10.1134/1.1187189

By:

Babentsov, V. N.;
Vlasenko, Z. K.;
Vlasenko, A. I.;
Lyubchenko, A. V.

Publication type:

Article

Charge-carrier exclusion in InAs.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 444, doi. 10.1134/1.1187190

By:

Bolgov, S. S.;
Malyutenko, V. K.;
Savchenko, A. P.

Publication type:

Article

Nature of hole localization centers in sodium-doped lead chalcogenides.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 446, doi. 10.1134/1.1187191

By:

Alekseeva, G. T.;
Gurieva, E. A.;
Konstantinov, P. P.;
Prokof’eva, L. V.;
Ravich, Yu. I.

Publication type:

Article

Effect of fast-neutron irradiation on the photoluminescence of n-type GaAs(Te) crystals.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 449, doi. 10.1134/1.1187192

By:

Glinchuk, K. D.;
Prokhorovich, A. V.

Publication type:

Article

On the relaxational characteristics and stability of a Si:H films grown at high temperatures.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 452, doi. 10.1134/1.1187193

By:

Kurova, I. A.;
Ormont, N. N.;
Golikova, O. A.;
Kudoyarova, V. Kh.

Publication type:

Article

The properties of low-threshold heterolasers with clusters of quantum dots.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 455

By:

Zaıtsev, S. V.;
Gordeev, N. Yu.;
Ustinov, V. M.;
Zhukov, A. E.;
Egorov, A. Yu.;
Maksimov, M. V.;
Tsatsul’nikov, A. F.;
Ledentsov, N. N.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

Deep vacancy levels in (AlAs)[sub 1](GaAs)[sub 3] superlattices.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 460, doi. 10.1134/1.1187194

By:

Grinyaev, S. N.;
Karavaev, G. F.

Publication type:

Article

Infrared absorption in porous silicon obtained in electrolytes containing ethanol.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 470, doi. 10.1134/1.1187195

By:

Kopylov, A. A.;
Kholodilov, A. N.

Publication type:

Article

Inelastic electron scattering in strongly doped Bi[sub 0.88]Sb[sub 0.12].

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 473, doi. 10.1134/1.1187197

By:

Aliev, S. A.;
Movsum-zade, A. A.;
Ragimov, S. S.

Publication type:

Article

Photoelectric effect in GaAs-based surface-barrier structures: Temperature dependence of the short-wavelength quantum efficiency.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 476, doi. 10.1134/1.1187198

By:

Gol’dberg, Yu. A.;
Konstantinov, O. V.;
Obolenskiı, O. I.;
Posse, E. A.;
Tsarenkov, B. V.

Publication type:

Article

Contact phenomena in two-dimensional electronic systems.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 480, doi. 10.1134/1.1187199

By:

Shikin, V. B.;
Shikina, N. I.

Publication type:

Article

Exchange energy of a free electron in a semiconductor.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 484, doi. 10.1134/1.1187200

By:

Konstantinov, O. V.;
Obolenskiı, O. I.;
Tsarenkov, B. V.

Publication type:

Article

Electron transport under Wannier–Stark localization conditions in silicon carbide polytypes.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 489, doi. 10.1134/1.1187196

By:

Sankin, V. I.;
Stolichnov, I. A.

Publication type:

Article

Low-frequency Hall conductance of a semi-infinite two-dimensional system.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 496, doi. 10.1134/1.1187211

By:

Shikin, V. B.

Publication type:

Article

Electrical properties of the solid solutions p-type GaAs[sub 1-x]Sb[sub x] doped with germanium.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 498, doi. 10.1134/1.1187213

By:

Allen, T. Yu.;
Polyanskaya, T. A.

Publication type:

Article

Photoluminescence in porous silicon produced as a result of intense laser excitation.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 503

By:

Shatkovskiı, E.;
Vertsinskiı, Ya.

Publication type:

Article

Luminescence properties of gallium nitride layers grown on silicon carbide substrates by gas-phase epitaxy in a chloride system.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 523, doi. 10.1134/1.1187206

By:

Zubrilov, A. S.;
Mel’nik, Yu. V.;
Tsvetkov, D. V.;
Bugrov, V. E.;
Nikolaev, A. E.;
Stepanov, S. I.;
Dmitriev, V. A.

Publication type:

Article

Polarization anisotropy of optical interband transitions in strained InGaAs/GaAs quantum wires.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 509, doi. 10.1134/1.1187203

By:

Gurevich, S. A.;
Zakheim, D. A.;
Solov’ev, S. A.

Publication type:

Article

Photoresponse of Cd[sub x]Hg[sub 1-x]Te crystals due to composition inhomogeneities.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 515, doi. 10.1134/1.1187204

By:

Virt, I. S.;
Tsyutsyura, D. I.

Publication type:

Article

Transient space-charge-limited current in porous silicon.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 517, doi. 10.1134/1.1187205

By:

Kazakova, L. P.;
Lebedev, A. A.;
Lebedev, É. A.

Publication type:

Article

Effect of transverse pump current nonuniformity and field distribution on the dynamical characteristics of strip injection lasers.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 519, doi. 10.1134/1.1187315

By:

Gurevich, S. A.;
Simin, G. S.;
Shatalov, M. S.

Publication type:

Article

The Schottky barrier at a junction between a metal and silicon carbide.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 506, doi. 10.1134/1.1187202

By:

Davydov, S. Yu.;
Lebedev, A. A.;
Tikhonov, S. K.

Publication type:

Article

Mechanism of multivalued electrical conductivity anisotropy in double heterostructure wells and superlattices.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 527, doi. 10.1134/1.1187207

By:

Gribnikov, Z. S.

Publication type:

Article

Positive magnetoresistance in films of the ferromagnetic semiconductor Eu[sub 1-x]Sm[sub x]O.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 531, doi. 10.1134/1.1187208

By:

Kabanov, V. F.;
Sverdlova, A. M.

Publication type:

Article

Photoacoustic spectroscopy of porous silicon.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 534, doi. 10.1134/1.1187209

By:

Obraztsov, A. N.;
Timoshenko, V. Yu.;
Okushi, H.;
Watanabe, H.

Publication type:

Article

Exciton scattering by concentration fluctuations and projection of the spins of magnetic impurities in quantum wells in semimagnetic semiconductors.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 537, doi. 10.1134/1.1187210

By:

Vertsimakha, A. V.;
Sugakov, V. I.

Publication type:

Article

Optical absorption edge and its modification due to the decomposition of cadmium telluride and cadmium sulfide solid solution films.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 540, doi. 10.1134/1.1187185

By:

Belyaev, A. P.;
Rubets, V. P.;
Kalinkin, I. P.

Publication type:

Article