Diffusion of boron and phosphorus in silicon during high-temperature ion implantation.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 321, doi. 10.1134/1.1187179
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- Publication type:
- Article
Works matching IS 10637826 AND DT 1997 AND VI 31 AND IP 4
Results: 26
1
2
Effect of electron and neutron bombardment on the orange luminescence spectra of not specially doped and copper-doped cadmium sulfide single crystals.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 326, doi. 10.1134/1.1187180
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- Publication type:
- Article
3
Effect of lateral transport of photoinduced charge carriers in a heterostructure with a two-dimensional electron gas.
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- Semiconductors, 1997, v. 31, n. 4, p. 329, doi. 10.1134/1.1187181
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- Publication type:
- Article
4
The electrical conductivity of polycrystalline SnO[sub 2](Cu) films and their sensitivity to hydrogen sulfide.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 335, doi. 10.1134/1.1187182
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- Publication type:
- Article
5
Characteristic features of the accumulation of vacancy- and interstitial-type radiation defects in dislocation-free silicon with different oxygen contents.
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- Semiconductors, 1997, v. 31, n. 4, p. 340, doi. 10.1134/1.1187183
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- Publication type:
- Article
6
Solid solution In[sub x]Ga[sub 1-x]As[sub y]Sb[sub z]P[sub 1-y-z]: A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 344, doi. 10.1134/1.1187160
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- Publication type:
- Article
7
Interband magnetooptic absorption line shape in bismuth.
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- Semiconductors, 1997, v. 31, n. 4, p. 350, doi. 10.1134/1.1187161
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- Publication type:
- Article
8
Intense photoluminescence of porous layers of SiC films grown on silicon substrates.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 354, doi. 10.1134/1.1187162
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- Publication type:
- Article
9
Injection enhancement of photocurrent in polycrystalline silicon p[sup +]–n–n[sup +] structures.
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- Semiconductors, 1997, v. 31, n. 4, p. 359, doi. 10.1134/1.1187163
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- Publication type:
- Article
10
Particle scattering times on one-dimensional potential barriers.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 361, doi. 10.1134/1.1187159
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- Publication type:
- Article
11
Transverse stability of an impact-ionization front in a Si p[sup +]-n-n[sup +] structure.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 366, doi. 10.1134/1.1187164
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- Publication type:
- Article
12
Deep level transient spectroscopy under conditions of current-carrier exchange between two allowed bands.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 371, doi. 10.1134/1.1187165
- By:
- Publication type:
- Article
13
Effect of inhomogeneities of Bi[sub 2]T[sub 3] crystals on the transverse Nernst–Ettingshausen effect.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 375, doi. 10.1134/1.1187166
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- Publication type:
- Article
14
Investigation of carrier transport in a system of undoped quantum wells under pulsed excitation.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 378, doi. 10.1134/1.1187167
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- Publication type:
- Article
15
Electron localization in sound absorption oscillations in the quantum Hall effect regime.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 384, doi. 10.1134/1.1187168
- By:
- Publication type:
- Article
16
Spin relaxation and weak localization of two-dimensional electrons in asymmetric quantum wells.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 391, doi. 10.1134/1.1187169
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- Publication type:
- Article
17
Hall effect on inertial electrons in semiconductors.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 399, doi. 10.1134/1.1187170
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- Publication type:
- Article
18
Modeling of mass transfer under conditions of local gas-phase epitaxy through a mask.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 401
- By:
- Publication type:
- Article
19
Photoconductivity of the germanium-doped solid solution p-GaAs[sub 0.94]Sb[sub 0.06].
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 405, doi. 10.1134/1.1187172
- By:
- Publication type:
- Article
20
Propagation of a surface acoustic wave in a layered system containing a two-dimensional conducting layer.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 407, doi. 10.1134/1.1187321
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- Publication type:
- Article
21
Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 411, doi. 10.1134/1.1187173
- By:
- Publication type:
- Article
22
Neutron-activation analysis of the impurity composition of gallium arsenide based semiconductor structures.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 415, doi. 10.1134/1.1187174
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- Publication type:
- Article
23
Effect of laser radiation on the electronic density of states of an <insulator gallium arsenide> interface.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 418, doi. 10.1134/1.1187175
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- Publication type:
- Article
24
Radiative cooling under the conditions of magnetoconcentration.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 423, doi. 10.1134/1.1187176
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- Publication type:
- Article
25
Transitory switching-on of microplasmas at subthreshold voltages.
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 431, doi. 10.1134/1.1187178
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- Publication type:
- Article
26
Effect of ultrasonic treatment on deformation effects and the structure of local centers in the substrate and in the contact regions of M/n-n[sup +]-GaAs structures (M=Pt, Cr, W).
- Published in:
- Semiconductors, 1997, v. 31, n. 4, p. 427, doi. 10.1134/1.1187177
- By:
- Publication type:
- Article