Works matching IS 10637826 AND DT 1997 AND VI 31 AND IP 12
Results: 16
Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates.
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- Semiconductors, 1997, v. 31, n. 12, p. 1217, doi. 10.1134/1.1187296
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- Article
Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching.
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- Semiconductors, 1997, v. 31, n. 12, p. 1221, doi. 10.1134/1.1187297
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- Article
Energy spectrum of oxygen-implanted lead telluride deduced from optical absorption data.
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- Semiconductors, 1997, v. 31, n. 12, p. 1225, doi. 10.1134/1.1187298
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- Article
Spectral, energy, and temporal characteristics of two-photon-excited fluorescence of ZnSe single crystal in the blue region of the spectrum.
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- Semiconductors, 1997, v. 31, n. 12, p. 1228, doi. 10.1134/1.1187299
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- Article
Photoconductivity of sulfur-doped silicon near 10.6 μm.
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- Semiconductors, 1997, v. 31, n. 12, p. 1231, doi. 10.1134/1.1187300
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- Article
Effect of different types of surface treatment on the photoelectric and optical properties of CdTe.
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- Semiconductors, 1997, v. 31, n. 12, p. 1234, doi. 10.1134/1.1187301
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- Article
Properties of p-PbTe (Ga) based diode structures.
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- Semiconductors, 1997, v. 31, n. 12, p. 1237, doi. 10.1134/1.1187302
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- Article
Annihilation of nonradiative recombination centers in GaAs/AlGaAs multiquantum well structures as a result of exposure to plasma.
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- Semiconductors, 1997, v. 31, n. 12, p. 1241, doi. 10.1134/1.1187303
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- Article
Photoluminescence of localized exitons in coherently strained ZnS–ZnSe/GaAs(001) quantum wells.
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- Semiconductors, 1997, v. 31, n. 12, p. 1244, doi. 10.1134/1.1187304
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- Article
Macroscopic, local, volume, charge-carrier states in quasi-zero-dimensional structures.
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- Semiconductors, 1997, v. 31, n. 12, p. 1247, doi. 10.1134/1.1187305
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- Article
Metastability and relaxation processes in hydrogenated amorphous silicon.
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- Semiconductors, 1997, v. 31, n. 12, p. 1252, doi. 10.1134/1.1187306
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- Article
Light-induced processes in a-Si:H films at elevated temperatures.
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- Semiconductors, 1997, v. 31, n. 12, p. 1257, doi. 10.1134/1.1187307
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- Article
Manifestation of percolation conductivity of short-channel field-effect transistors in the spectrum of shallow interface states.
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- Semiconductors, 1997, v. 31, n. 12, p. 1261, doi. 10.1134/1.1187308
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- Article
Kinetics of ion depolarization of Si–MOS structures in the linear voltage sweep regime.
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- Semiconductors, 1997, v. 31, n. 12, p. 1268, doi. 10.1134/1.1187309
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- Article
Characteristics of a far-infrared germanium hot-hole laser in the Voigt and Faraday field configurations.
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- Semiconductors, 1997, v. 31, n. 12, p. 1273
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- Article
Amplification of radiation in the far infrared range by hot holes in germanium in crossed electric and magnetic fields.
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- Semiconductors, 1997, v. 31, n. 12, p. 1280
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- Article