Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1217, doi. 10.1134/1.1187296
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 1997 AND VI 31 AND IP 12
Results: 16
1
2
Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1221, doi. 10.1134/1.1187297
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- Publication type:
- Article
3
Energy spectrum of oxygen-implanted lead telluride deduced from optical absorption data.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1225, doi. 10.1134/1.1187298
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- Publication type:
- Article
4
Spectral, energy, and temporal characteristics of two-photon-excited fluorescence of ZnSe single crystal in the blue region of the spectrum.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1228, doi. 10.1134/1.1187299
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- Publication type:
- Article
5
Photoconductivity of sulfur-doped silicon near 10.6 μm.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1231, doi. 10.1134/1.1187300
- By:
- Publication type:
- Article
6
Effect of different types of surface treatment on the photoelectric and optical properties of CdTe.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1234, doi. 10.1134/1.1187301
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- Publication type:
- Article
7
Properties of p-PbTe (Ga) based diode structures.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1237, doi. 10.1134/1.1187302
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- Publication type:
- Article
8
Annihilation of nonradiative recombination centers in GaAs/AlGaAs multiquantum well structures as a result of exposure to plasma.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1241, doi. 10.1134/1.1187303
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- Publication type:
- Article
9
Photoluminescence of localized exitons in coherently strained ZnS–ZnSe/GaAs(001) quantum wells.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1244, doi. 10.1134/1.1187304
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- Publication type:
- Article
10
Macroscopic, local, volume, charge-carrier states in quasi-zero-dimensional structures.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1247, doi. 10.1134/1.1187305
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- Publication type:
- Article
11
Metastability and relaxation processes in hydrogenated amorphous silicon.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1252, doi. 10.1134/1.1187306
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- Publication type:
- Article
12
Light-induced processes in a-Si:H films at elevated temperatures.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1257, doi. 10.1134/1.1187307
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- Publication type:
- Article
13
Manifestation of percolation conductivity of short-channel field-effect transistors in the spectrum of shallow interface states.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1261, doi. 10.1134/1.1187308
- By:
- Publication type:
- Article
14
Kinetics of ion depolarization of Si–MOS structures in the linear voltage sweep regime.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1268, doi. 10.1134/1.1187309
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- Publication type:
- Article
15
Characteristics of a far-infrared germanium hot-hole laser in the Voigt and Faraday field configurations.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1273
- By:
- Publication type:
- Article
16
Amplification of radiation in the far infrared range by hot holes in germanium in crossed electric and magnetic fields.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1280
- By:
- Publication type:
- Article