Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1003, doi. 10.1134/1.1187013
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 1997 AND VI 31 AND IP 10
Results: 26
1
2
Influence of fast-neutron irradiation on the intensity of the copper-related luminescence band at hν[sub m]=1.01 eV in n-type GaAs.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1006, doi. 10.1134/1.1187014
- By:
- Publication type:
- Article
3
Thermopower of transmutation-doped Ge:Ga in the region for hopping conductivity.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1008, doi. 10.1134/1.1187015
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- Publication type:
- Article
4
Resonance acceptor states in uniaxially strained semiconductors.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1014, doi. 10.1134/1.1187016
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- Publication type:
- Article
5
Nuclear magnetic resonance spectra of [sup 119]Sn and [sup 125]Te in SnTe and SnTe:Mn.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1021
- By:
- Publication type:
- Article
6
Characterization of macrodefects in pure silcon carbide films using X-ray topography and Raman scattering.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1025, doi. 10.1134/1.1187018
- By:
- Publication type:
- Article
7
Hole boil-off and the magnetoresitance of the semimagnetic semiconductor Hg[sub 1-x]Mn[sub x]Te[sub 1-y]Se[sub y].
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1030, doi. 10.1134/1.1187019
- By:
- Publication type:
- Article
8
Effect of infrared laser radiation on the structure and electrophysical properties of undoped single-crystal InAs.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1037, doi. 10.1134/1.1187020
- By:
- Publication type:
- Article
9
Effect of superstoichiometric components on the spectral and kinetic characteristics of the luminescence of ZnSe crystals with isovalent impurities.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1041, doi. 10.1134/1.1187021
- By:
- Publication type:
- Article
10
Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1046, doi. 10.1134/1.1187022
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- Publication type:
- Article
11
Effect of deep levels on current excitation in 6H-SiC diodes.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1049, doi. 10.1134/1.1187023
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- Publication type:
- Article
12
Effect of the electric field in the space-charge layer on the efficiency of short-wave photoelectric conversion in GaAs Schottky diodes.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1053, doi. 10.1134/1.1187024
- By:
- Publication type:
- Article
13
A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1057, doi. 10.1134/1.1187025
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- Publication type:
- Article
14
High-temperature irradiation of gallium arsenide.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1060, doi. 10.1134/1.1187026
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- Publication type:
- Article
15
The role of defects in the formation of local states induced by atoms adsorbed on a semiconductor surface.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1062, doi. 10.1134/1.1187027
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- Publication type:
- Article
16
Characteristics of the formation of (Al, Ga)Sb/InAs heterointerfaces in molecular-beam epitaxy.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1067, doi. 10.1134/1.1187324
- By:
- Publication type:
- Article
17
Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1071
- By:
- Publication type:
- Article
18
Deep-level transient spectroscopy in InAs/GaAs laser structures with vertically coupled quantum dots.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1074, doi. 10.1134/1.1187029
- By:
- Publication type:
- Article
19
Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1080, doi. 10.1134/1.1187030
- By:
- Publication type:
- Article
20
Structure and properties of porous silicon obtained by photoanodization.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1084, doi. 10.1134/1.1187320
- By:
- Publication type:
- Article
21
Optimization of the operating conditions of thermocouples allowing for nonlinearity of the temperature distribution.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1091, doi. 10.1134/1.1187031
- By:
- Publication type:
- Article
22
Effect of an external bias voltage on the photoelectric properties of silicon MIS/IL structures.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 1094, doi. 10.1134/1.1187032
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- Publication type:
- Article
23
Erratum: Structure and electrical conductivity of polycrystalline silicon films grown by molecular-beam deposition accompanied by low-energy ion bombardment of the growth surface [Semiconductors 31, 237–240 (March 1997)].
- Published in:
- 1997
- By:
- Publication type:
- Erratum
24
Thermodynamic analysis of the molecular-beam epitaxial growth of quaternary III-V compounds: Ga[sub x]In[sub 1-x]P[sub y]As[sub 1-y].
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 989, doi. 10.1134/1.1187033
- By:
- Publication type:
- Article
25
Application of elastic mid-infrared light scattering to the investigation of internal gettering in Czochralski-grown silicon.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 994, doi. 10.1134/1.1187034
- By:
- Publication type:
- Article
26
Molecular effect in the implantation of light ions in semiconductors.
- Published in:
- Semiconductors, 1997, v. 31, n. 10, p. 999, doi. 10.1134/1.1187012
- By:
- Publication type:
- Article