Works matching IS 10637826 AND DT 1997 AND VI 31 AND IP 10
Results: 26
Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures.
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- Semiconductors, 1997, v. 31, n. 10, p. 1003, doi. 10.1134/1.1187013
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- Article
Influence of fast-neutron irradiation on the intensity of the copper-related luminescence band at hν[sub m]=1.01 eV in n-type GaAs.
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- Semiconductors, 1997, v. 31, n. 10, p. 1006, doi. 10.1134/1.1187014
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Thermopower of transmutation-doped Ge:Ga in the region for hopping conductivity.
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- Semiconductors, 1997, v. 31, n. 10, p. 1008, doi. 10.1134/1.1187015
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Resonance acceptor states in uniaxially strained semiconductors.
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- Semiconductors, 1997, v. 31, n. 10, p. 1014, doi. 10.1134/1.1187016
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- Article
Nuclear magnetic resonance spectra of [sup 119]Sn and [sup 125]Te in SnTe and SnTe:Mn.
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- Semiconductors, 1997, v. 31, n. 10, p. 1021
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- Article
Characterization of macrodefects in pure silcon carbide films using X-ray topography and Raman scattering.
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- Semiconductors, 1997, v. 31, n. 10, p. 1025, doi. 10.1134/1.1187018
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- Article
Hole boil-off and the magnetoresitance of the semimagnetic semiconductor Hg[sub 1-x]Mn[sub x]Te[sub 1-y]Se[sub y].
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- Semiconductors, 1997, v. 31, n. 10, p. 1030, doi. 10.1134/1.1187019
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- Article
Effect of infrared laser radiation on the structure and electrophysical properties of undoped single-crystal InAs.
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- Semiconductors, 1997, v. 31, n. 10, p. 1037, doi. 10.1134/1.1187020
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- Article
Effect of superstoichiometric components on the spectral and kinetic characteristics of the luminescence of ZnSe crystals with isovalent impurities.
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- Semiconductors, 1997, v. 31, n. 10, p. 1041, doi. 10.1134/1.1187021
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- Article
Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures.
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- Semiconductors, 1997, v. 31, n. 10, p. 1046, doi. 10.1134/1.1187022
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- Article
Effect of deep levels on current excitation in 6H-SiC diodes.
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- Semiconductors, 1997, v. 31, n. 10, p. 1049, doi. 10.1134/1.1187023
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- Article
Effect of the electric field in the space-charge layer on the efficiency of short-wave photoelectric conversion in GaAs Schottky diodes.
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- Semiconductors, 1997, v. 31, n. 10, p. 1053, doi. 10.1134/1.1187024
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- Article
A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system.
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- Semiconductors, 1997, v. 31, n. 10, p. 1057, doi. 10.1134/1.1187025
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- Article
High-temperature irradiation of gallium arsenide.
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- Semiconductors, 1997, v. 31, n. 10, p. 1060, doi. 10.1134/1.1187026
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- Article
The role of defects in the formation of local states induced by atoms adsorbed on a semiconductor surface.
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- Semiconductors, 1997, v. 31, n. 10, p. 1062, doi. 10.1134/1.1187027
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- Article
Characteristics of the formation of (Al, Ga)Sb/InAs heterointerfaces in molecular-beam epitaxy.
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- Semiconductors, 1997, v. 31, n. 10, p. 1067, doi. 10.1134/1.1187324
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- Article
Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures.
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- Semiconductors, 1997, v. 31, n. 10, p. 1071
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- Article
Deep-level transient spectroscopy in InAs/GaAs laser structures with vertically coupled quantum dots.
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- Semiconductors, 1997, v. 31, n. 10, p. 1074, doi. 10.1134/1.1187029
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- Article
Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy.
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- Semiconductors, 1997, v. 31, n. 10, p. 1080, doi. 10.1134/1.1187030
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- Article
Structure and properties of porous silicon obtained by photoanodization.
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- Semiconductors, 1997, v. 31, n. 10, p. 1084, doi. 10.1134/1.1187320
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- Article
Optimization of the operating conditions of thermocouples allowing for nonlinearity of the temperature distribution.
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- Semiconductors, 1997, v. 31, n. 10, p. 1091, doi. 10.1134/1.1187031
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- Article
Effect of an external bias voltage on the photoelectric properties of silicon MIS/IL structures.
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- Semiconductors, 1997, v. 31, n. 10, p. 1094, doi. 10.1134/1.1187032
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Erratum: Structure and electrical conductivity of polycrystalline silicon films grown by molecular-beam deposition accompanied by low-energy ion bombardment of the growth surface [Semiconductors 31, 237–240 (March 1997)].
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- 1997
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- Erratum
Thermodynamic analysis of the molecular-beam epitaxial growth of quaternary III-V compounds: Ga[sub x]In[sub 1-x]P[sub y]As[sub 1-y].
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- Semiconductors, 1997, v. 31, n. 10, p. 989, doi. 10.1134/1.1187033
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Application of elastic mid-infrared light scattering to the investigation of internal gettering in Czochralski-grown silicon.
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- Semiconductors, 1997, v. 31, n. 10, p. 994, doi. 10.1134/1.1187034
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Molecular effect in the implantation of light ions in semiconductors.
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- Semiconductors, 1997, v. 31, n. 10, p. 999, doi. 10.1134/1.1187012
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- Article