Works matching IS 10637745 AND DT 2002 AND VI 47 AND IP 7
Results: 20
Preface.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S1, doi. 10.1134/1.1529953
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Semiconductor Silicon at the Threshold of Twenty-First Century.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S3, doi. 10.1134/1.1529954
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Crystals for Photonics.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S15, doi. 10.1134/1.1529955
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Fundamentals of High-Temperature Crystallization.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S27, doi. 10.1134/1.1529956
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Development of Shaping Technologies for Crystals Grown from Melts.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S35, doi. 10.1134/1.1529957
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New Advances and Developments in the Stepanov Method for the Growth of Shaped Crystals.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S43, doi. 10.1134/1.1529958
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Growth of Oxide Fibers by the Internal Crystallization Method.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S53, doi. 10.1134/1.1529959
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Chemical Aspects of Crystal Growth of Multicomponent Fluoride Materials from the Melt.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S63, doi. 10.1134/1.1529960
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Characterization of Defects Generated by Di- and Trivalent Cations in the Potassium-Dihydrophosphate Structure and Their Influence on Growth Kinetics and Face Morphology.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S76, doi. 10.1134/1.1529961
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Mechanism of Growth of ZnO Single Crystals from Hydrothermal Alkali Solutions.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S86, doi. 10.1134/1.1529962
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Growth and Properties of Nb- or Sn-Doped KTiOPO[sub 4] Crystals.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S99, doi. 10.1134/1.1529963
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Nucleation Kinetics at Strong Supersaturation.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S105, doi. 10.1134/1.1529964
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On the Equilibrium Crystal Habit as Predicted by the Gibbs–Curie Principle.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S116, doi. 10.1134/1.1529965
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Low-Temperature Molecular Beam Epitaxy of GaAs: Influence of Crystallization Conditions on Structure and Properties of Layers.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S118, doi. 10.1134/1.1529966
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Real Structures of Doped Lead Telluride Crystals.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S128, doi. 10.1134/1.1529967
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Perfection and Homogeneity of Space-Grown GaSb:Te Crystals.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S136, doi. 10.1134/1.1529968
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Atomic Force Microscopy Study of Lysozyme Crystallization.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S149, doi. 10.1134/1.1529969
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Nucleation and Growth of Crystalline Diamond Particles on Silicon Tips.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S159, doi. 10.1134/1.1529970
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Growth of a Si Nanocrystal in an Oxygen Atmosphere. Computer Simulation.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S169, doi. 10.1134/1.1529971
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Epitaxy of CdS and PbS on Langmuir Layers.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S177, doi. 10.1134/1.1529972
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