Works in Semiconductors, 2022, Vol 56, Issue 2

Results: 15

Increase in the Efficiency of a Tandem Semiconductor Laser–Optical Amplifier Based on Self-Organizing Quantum Dots.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 139, doi. 10.1134/S1063782622010195

By:

Zhukov, A. E.;
Kryzhanovskaya, N. V.;
Moiseev, E. I.;
Dragunova, A. S.;
Nadtochiy, A. M.;
Maximov, M. V.;
Gordeev, N. Yu.

Publication type:

Article

Galvanomagnetic Properties in Anisotropic Layered Films Based on Bismuth Chalcogenides.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 134, doi. 10.1134/S1063782622010183

By:

Usov, O. A.;
Lukyanova, L. N.;
Volkov, M. P.

Publication type:

Article

Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 122, doi. 10.1134/S1063782622010171

By:

Sushkov, A. A.;
Pavlov, D. A.;
Andrianov, A. I.;
Shengurov, V. G.;
Denisov, S. A.;
Chalkov, V. Yu.;
Kriukov, R. N.;
Baidus, N. V.;
Yurasov, D. V.;
Rykov, A. V.

Publication type:

Article

Operating Characteristics of Semiconductor Quantum Well Lasers as Functions of the Waveguide Region Thickness.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 115, doi. 10.1134/S106378262201016X

By:

Sokolova, Z. N.;
Pikhtin, N. A;
Slipchenko, S. O.;
Asryan, L. V.

Publication type:

Article

Effect of Neutron Irradiation on the Spectrum of Deep-Level Defects in GaAs Grown by Liquid-Phase Epitaxy in a Hydrogen and Argon Atmosphere.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 107, doi. 10.1134/S1063782622010158

By:

Sobolev, M. M.;
Soldatenkov, F. Yu.

Publication type:

Article

Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 101, doi. 10.1134/S1063782622010146

By:

Smagina, Zh. V.;
Zinovyev, V. A.;
Stepikhova, M. V.;
Peretokin, A. V.;
Dyakov, S. A.;
Rodyakina, E. E.;
Novikov, A. V.;
Dvurechenskii, A. V.

Publication type:

Article

Cobalt-Doped Chemically Deposited Lead-Sulfide Films.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 91, doi. 10.1134/S1063782622010122

By:

Maskaeva, L. N.;
Mostovshchikova, E. V.;
Markov, V. F.;
Voronin, V. I.;
Pozdin, A. V.;
Selyanin, I. O.;
Mikhailova, A. I.

Publication type:

Article

ZnO-Based Antireflection Layers Obtained by Electron-Beam Evaporation.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 85, doi. 10.1134/S1063782622010110

By:

Markov, L. K.;
Pavluchenko, A. S.;
Smirnova, I. P.

Publication type:

Article

Thermoelectric Figure of Merit and Quantum Mobility of Holes in Copper-Doped Antimony-Telluride Single Crystals.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 78, doi. 10.1134/S1063782622010092

By:

Kul'bachinskii, V. A.;
Kytin, V. G.;
Apreleva, A. S.;
Konstantinova, E. A.

Publication type:

Article

3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 71, doi. 10.1134/S1063782622010080

By:

Khabibullin, R. A.;
Maremyanin, K. V.;
Ponomarev, D. S.;
Galiev, R. R.;
Zaycev, A. A.;
Danilov, A. I.;
Vasil'evskii, I. S.;
Vinichenko, A. N.;
Klochkov, A. N.;
Afonenko, A. A.;
Ushakov, D. V.;
Morozov, S. V.;
Gavrilenko, V. I.

Publication type:

Article

Torque Transfer to a Conducting Particle Using the Lorentz Force.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 67, doi. 10.1134/S1063782622010079

By:

Grachev, A. I.

Publication type:

Article

Mott and Efros–Shklovskii Variable-Range Hopping Conduction in Films Formed by Silicon Nanoparticles Doped with Phosphorus and Boron.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 58, doi. 10.1134/S1063782622010067

By:

Dorofeev, S. G.;
Kononov, N. N.;
Bubenov, S. S.;
Popelensky, V. M.;
Vinokurov, A. A.

Publication type:

Article

Study of the Parameters of a Two-Dimensional Electron Gas in InGaN/GaN Quantum Wells by Terahertz Plasmon Resonance.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 50, doi. 10.1134/S1063782622010055

By:

Burmistrov, E. R.;
Avakyants, L. P.

Publication type:

Article

Comparative Analysis of the Electroluminescence Efficiency in Type-I and Type-II Heterostructures Based on III–V Narrow-Gap Compounds.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 43, doi. 10.1134/S1063782622010043

By:

Bazhenov, N. L.;
Mynbaev, K. D.;
Semakova, A. A.;
Zegrya, G. G.

Publication type:

Article

On the Photoconductivity of p-GaSe〈REE〉 Layered Semiconductors and a Multiband Photoreceiver of Light on Their Basis.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 39, doi. 10.1134/S1063782622010018

By:

Abdinov, A. Sh.;
Babayeva, R. F.

Publication type:

Article