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Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1114, doi. 10.1134/S1063782619080244
By:
- Abolmasov, S. N.;
- Abramov, A. S.;
- Semenov, A. V.;
- Shakhray, I. S.;
- Terukov, E. I.;
- Malchukova, E. V.;
- Trapeznikova, I. N.
Publication type:
Article
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1110, doi. 10.1134/S1063782619080116
By:
- Khvostikov, V. P.;
- Kalyuzhnyy, N. A.;
- Mintairov, S. A.;
- Potapovich, N. S.;
- Sorokina, S. V.;
- Shvarts, M. Z.
Publication type:
Article
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1138, doi. 10.1134/S1063782619080037
By:
- Aleshkin, V. Ya.;
- Baidus, N. V.;
- Dubinov, A. A.;
- Kudryavtsev, K. E.;
- Nekorkin, S. M.;
- Kruglov, A. V.;
- Reunov, D. G.
Publication type:
Article
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1131, doi. 10.1134/S1063782619080189
By:
- Sorokin, S. V.;
- Avdienko, P. S.;
- Sedova, I. V.;
- Kirilenko, D. A.;
- Yagovkina, M. A.;
- Smirnov, A. N.;
- Davydov, V. Yu.;
- Ivanov, S. V.
Publication type:
Article
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1120, doi. 10.1134/S1063782619080165
By:
- Seredin, P. V.;
- Goloshchapov, D. L.;
- Zolotukhin, D. S.;
- Lenshin, A. S.;
- Mizerov, A. M.;
- Arsentyev, I. N.;
- Leiste, Harald;
- Rinke, Monika
Publication type:
Article
Relaxation, Thermal, and Interphase Effects in Polymer–Ferroelectric-Piezoelectric Ceramic Composites of Different Structures.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1092, doi. 10.1134/S1063782619080128
By:
- Kurbanov, M. A.;
- Ramazanova, I. S.;
- Dadashov, Z. A.;
- Mamedov, F. I.;
- Huseynova, G. Kh.;
- Yusifova, U. V.;
- Tatardar, F. N.;
- Faraczade, I. A.
Publication type:
Article
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1104, doi. 10.1134/S1063782619080074
By:
- Blokhin, S. A.;
- Bobrov, M. A.;
- Blokhin, A. A.;
- Kuzmenkov, A. G.;
- Maleev, N. A.;
- Ustinov, V. M.;
- Kolodeznyi, E. S.;
- Rochas, S. S.;
- Babichev, A. V.;
- Novikov, I. I.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Denisov, D. V.;
- Voropaev, K. O.;
- Ionov, A. S.;
- Egorov, A. Yu.
Publication type:
Article
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1099, doi. 10.1134/S1063782619080220
By:
- Zhukov, A. E.;
- Moiseev, E. I.;
- Kryzhanovskaya, N. V.;
- Blokhin, S. A.;
- Kulagina, M. M.;
- Guseva, Yu. A.;
- Mintairov, S. A.;
- Kalyuzhnyy, N. A.;
- Mozharov, A. M.;
- Zubov, F. I.;
- Maximov, M. V.
Publication type:
Article
On the Synthesis and Photoluminescence and Cathodoluminescence Properties of CdSe, CdTe, PbS, InSb, and GaAs Colloidal Quantum Dots.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1082, doi. 10.1134/S1063782619080232
By:
- Zhukov, N. D.;
- Kryl'skiy, D. V.;
- Shishkin, M. I.;
- Khazanov, A. A.
Publication type:
Article
Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1088, doi. 10.1134/S1063782619080141
By:
- Lunina, M. L.;
- Lunin, L. S.;
- Alfimova, D. L.;
- Pashchenko, A. S.;
- Danilina, E. M.;
- Nefedov, V. V.
Publication type:
Article
Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1066, doi. 10.1134/S1063782619080025
By:
- Aleshin, A. N.;
- Bugaev, A. S.;
- Ruban, O. A.;
- Saraikin, V. V.;
- Tabachkova, N. Yu.;
- Shchetinin, I. V.
Publication type:
Article
Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1075, doi. 10.1134/S1063782619080207
By:
- Uvarov, A. V.;
- Zelentsov, K. S.;
- Gudovskikh, A. S.
Publication type:
Article
Nanostructured ITO/SiO2 Coatings.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1033, doi. 10.1134/S1063782619080153
By:
- Markov, L. K.;
- Pavluchenko, A. S.;
- Smirnova, I. P.
Publication type:
Article
Some Physical Properties of the New Intermetallic Compound NbCd2.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1028, doi. 10.1134/S1063782619080219
By:
- Volodin, V. N.;
- Tuleushev, Y. Zh.;
- Zhakanbaev, E. A.;
- Migunova, A. A.;
- Nicenko, A. B.
Publication type:
Article
Dependence of the Spontaneous Luminescence Intensity in ZnO Nanorods on their Length.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1060, doi. 10.1134/S1063782619080086
By:
- Gruzintsev, A. N.;
- Redkin, A. N.;
- Yakimov, E. E.
Publication type:
Article
Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1054, doi. 10.1134/S1063782619080177
By:
- Sladkopevtsev, B. V.;
- Kotov, G. I.;
- Arsentyev, I. N.;
- Shashkin, I. S.;
- Mittova, I. Ya.;
- Tomina, E. V.;
- Samsonov, A. A.;
- Kostenko, P. V.
Publication type:
Article
Template Synthesis of Monodisperse Submicrometer Spherical Nanoporous Silicon Particles.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1048, doi. 10.1134/S106378261908013X
By:
- Kurdyukov, D. A.;
- Feoktistov, N. A.;
- Kirilenko, D. A.;
- Smirnov, A. N.;
- Davydov, V. Yu.;
- Golubev, V. G.
Publication type:
Article
On the Theory of Plasmon–Excitons: An Estimate of the Coupling Constant and the Optical Spectrum.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1042, doi. 10.1134/S1063782619080050
By:
- Averkiev, N. S.;
- Korotchenkov, A. V.;
- Kosobukin, V. A.
Publication type:
Article
Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1038, doi. 10.1134/S1063782619080104
By:
- Khanin, Yu. N.;
- Vdovin, E. E.;
- Mishchenko, A.;
- Novoselov, K. S.
Publication type:
Article
Effect of X-Ray Radiation on the Optical Properties of Photorefractive Bismuth-Silicate Crystals.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1024, doi. 10.1134/S1063782619080049
By:
- Avanesyan, V. T.;
- Piskovatskova, I. V.;
- Stozharov, V. M.
Publication type:
Article
Spin–Orbit Interaction and Carrier Mobility in a Longitudinal InSb Autosoliton under a Magnetic Field.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1018, doi. 10.1134/S1063782619080098
By:
- Kamilov, I. K.;
- Stepurenko, A. A.;
- Gummetov, A. E.
Publication type:
Article
Diffusion and Interaction of In and As Implanted into SiO2 Films.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1004, doi. 10.1134/S1063782619080190
By:
- Tyschenko, I. E.;
- Voelskow, M.;
- Mikhaylov, A. N.;
- Tetelbaum, D. I.
Publication type:
Article
Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1011, doi. 10.1134/S1063782619080062
By:
- Balakshin, Yu. V.;
- Kozhemiako, A. V.;
- Petrovic, S.;
- Erich, M.;
- Shemukhin, A. A.;
- Chernysh, V. S.
Publication type:
Article
Zhores Ivanovich Alferov (March 15, 1930–March 1, 2019).
Published in:
2019
Publication type:
Calendar

Found: 24

Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass.

Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters.

Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD.

Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties.

Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate.

Relaxation, Thermal, and Interphase Effects in Polymer–Ferroelectric-Piezoelectric Ceramic Composites of Different Structures.

Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers.

Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation.

On the Synthesis and Photoluminescence and Cathodoluminescence Properties of CdSe, CdTe, PbS, InSb, and GaAs Colloidal Quantum Dots.

Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures.

Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate.

Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition.

Nanostructured ITO/SiO<sub>2</sub> Coatings.

Some Physical Properties of the New Intermetallic Compound NbCd<sub>2</sub>.

Dependence of the Spontaneous Luminescence Intensity in ZnO Nanorods on their Length.

Investigation of the Current–Voltage Characteristics of New MnO<sub>2</sub>/GaAs(100) and V<sub>2</sub>O<sub>5</sub>/GaAs(100) Heterostructures Subjected to Heat Treatment.

Template Synthesis of Monodisperse Submicrometer Spherical Nanoporous Silicon Particles.

On the Theory of Plasmon–Excitons: An Estimate of the Coupling Constant and the Optical Spectrum.

Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures.

Effect of X-Ray Radiation on the Optical Properties of Photorefractive Bismuth-Silicate Crystals.

Spin–Orbit Interaction and Carrier Mobility in a Longitudinal InSb Autosoliton under a Magnetic Field.

Diffusion and Interaction of In and As Implanted into SiO<sub>2</sub> Films.

Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon.

Zhores Ivanovich Alferov (March 15, 1930–March 1, 2019).