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New Direction in the Application of Thermoelectric Energy Converters.
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- Semiconductors, 2019, v. 53, n. 7, p. 861, doi. 10.1134/S1063782619070066
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- Article
Size Dependence of the Melting Point of Silicon Nanoparticles: Molecular Dynamics and Thermodynamic Simulation.
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- Semiconductors, 2019, v. 53, n. 7, p. 947, doi. 10.1134/S1063782619070236
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Epitaxial Carbyne: Analytical Results.
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- Semiconductors, 2019, v. 53, n. 7, p. 954, doi. 10.1134/S1063782619070078
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Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of A<sup>III</sup>N/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy.
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- Semiconductors, 2019, v. 53, n. 7, p. 993, doi. 10.1134/S1063782619070224
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Properties of Semipolar GaN Grown on a Si(100) Substrate.
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- Semiconductors, 2019, v. 53, n. 7, p. 989, doi. 10.1134/S1063782619070054
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Features of the Initial Stage of the Heteroepitaxy of Silicon Layers on Germanium When Grown from Silicon Hydrides.
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- Semiconductors, 2019, v. 53, n. 7, p. 979, doi. 10.1134/S1063782619070182
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Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons.
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- Semiconductors, 2019, v. 53, n. 7, p. 975, doi. 10.1134/S1063782619070133
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High-Voltage Diffused Step Recovery Diodes: II. Theory.
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- Semiconductors, 2019, v. 53, n. 7, p. 969, doi. 10.1134/S1063782619070157
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High-Voltage Diffused Step Recovery Diodes: I. Numerical Simulation.
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- Semiconductors, 2019, v. 53, n. 7, p. 962, doi. 10.1134/S1063782619070145
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- Article
Orientation Relationships upon the Structural Transformation of Monoclinic and Cubic Phases in Silver Sulfide.
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- Semiconductors, 2019, v. 53, n. 7, p. 941, doi. 10.1134/S1063782619070212
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- Article
On the Thermal Activation of Conductivity Electrons in a p-Type HgTe/CdHgTe Double Quantum Well with HgTe Layers of Critical Width.
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- Semiconductors, 2019, v. 53, n. 7, p. 919, doi. 10.1134/S1063782619070194
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- Article
On the Morphology and Optical Properties of Molybdenum Disulfide Nanostructures from a Monomolecular Layer to a Fractal-Like Substructure.
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- Semiconductors, 2019, v. 53, n. 7, p. 923, doi. 10.1134/S106378261907008X
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Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers.
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- Semiconductors, 2019, v. 53, n. 7, p. 930, doi. 10.1134/S1063782619070248
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Dependence of the Conductivity of Porous Silicon Layers on the Carrier-Transport Direction.
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- Semiconductors, 2019, v. 53, n. 7, p. 936, doi. 10.1134/S1063782619070108
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Electrical and Optical Properties of Unrelaxed InAs<sub>1 –</sub><sub>x</sub>Sb<sub>x</sub> Heteroepitaxial Structures.
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- Semiconductors, 2019, v. 53, n. 7, p. 906, doi. 10.1134/S1063782619070091
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Differences in the Impurity Ionization in Quasi-Classically Strong Constant and Alternating Electric Fields in a Two-Dimensional Superlattice Based on Graphene.
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- Semiconductors, 2019, v. 53, n. 7, p. 911, doi. 10.1134/S1063782619070042
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Spherical Distributed Bragg Reflector with an Omnidirectional Stop Band in the Near-IR Spectral Range.
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- Semiconductors, 2019, v. 53, n. 7, p. 901, doi. 10.1134/S1063782619070170
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Development of the Physicochemical Properties of the GaSb(100) Surface in Ammonium Sulfide Solutions.
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- Semiconductors, 2019, v. 53, n. 7, p. 892, doi. 10.1134/S1063782619070169
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On the Properties of Isoparametric AlInGaAsP/InP Heterostructures.
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- Semiconductors, 2019, v. 53, n. 7, p. 887, doi. 10.1134/S1063782619070029
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Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium.
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- Semiconductors, 2019, v. 53, n. 7, p. 882, doi. 10.1134/S106378261907025X
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Structure of the Energy Spectrum of Holes in IV–VI Materials from a Different Viewpoint.
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- Semiconductors, 2019, v. 53, n. 7, p. 875, doi. 10.1134/S1063782619070200
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On the Poole–Frenkel Effect in Polycrystalline Europium Sulfide.
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- Semiconductors, 2019, v. 53, n. 7, p. 872, doi. 10.1134/S1063782619070121
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Thermoelectric Intensifier of Heat Transfer between Two Moving Media with Different Temperatures.
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- Semiconductors, 2019, v. 53, n. 7, p. 869, doi. 10.1134/S106378261907011X
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Theoretical Modeling of the Thermoelectric Properties of Fe<sub>2</sub>Ti<sub>1 –</sub><sub>x</sub>V<sub>x</sub>Sn Heusler Alloys.
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- Semiconductors, 2019, v. 53, n. 7, p. 865, doi. 10.1134/S1063782619070030
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