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Electrical and Optical Characteristics of Si-Nanoparticle Films Deposited onto Substrates by High-Voltage Electrospraying from Ethanol Sols.
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- Semiconductors, 2019, v. 53, n. 4, p. 552, doi. 10.1134/S1063782619040158
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Effect of Oxygen Flow Rate on Structural, Electrical and Optical Properties of Zinc Aluminum Oxide Thin Films Deposited by DC Magnetron Sputtering.
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- Semiconductors, 2019, v. 53, n. 4, p. 573, doi. 10.1134/S106378261904016X
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Optical and Structural Properties of Ag and c-Si Nanostructures Formed During the Metal-Assisted Chemical Etching of Silicon.
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- Semiconductors, 2019, v. 53, n. 4, p. 566, doi. 10.1134/S1063782619040274
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Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes.
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- Semiconductors, 2019, v. 53, n. 4, p. 545, doi. 10.1134/S1063782619040080
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Power Conversion Efficiencies of Perovskite and Dye-Sensitized Solar Cells under Various Solar Radiation Intensities.
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- Semiconductors, 2019, v. 53, n. 4, p. 540, doi. 10.1134/S1063782619040213
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Formation of Porous Silicon by Nanopowder Sintering.
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- Semiconductors, 2019, v. 53, n. 4, p. 530, doi. 10.1134/S1063782619040031
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Inhomogeneous Injection and Heat-Transfer Processes in Reversely Switched Dynistors Operating in the Pulse-Frequency Repetition Modes with a Limited Heat Sink.
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- Semiconductors, 2019, v. 53, n. 4, p. 524, doi. 10.1134/S1063782619040110
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High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects.
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- Semiconductors, 2019, v. 53, n. 4, p. 519, doi. 10.1134/S1063782619040183
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Large-Amplitude Shock Electromagnetic Wave in a Nonlinear Transmission Line Based on a Distributed Semiconductor Diode.
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- Semiconductors, 2019, v. 53, n. 4, p. 511, doi. 10.1134/S1063782619040171
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Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas.
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- Semiconductors, 2019, v. 53, n. 4, p. 484, doi. 10.1134/S1063782619040146
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Optical Properties of CdSe/ZnS Nanoparticles in Heat-Treated Polyvinylchloride Films.
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- Semiconductors, 2019, v. 53, n. 4, p. 499, doi. 10.1134/S1063782619040249
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Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films.
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- Semiconductors, 2019, v. 53, n. 4, p. 493, doi. 10.1134/S1063782619040262
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Electrical Characterization of Hybrid Halide Perovskites Based Heterojunction Device.
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- Semiconductors, 2019, v. 53, n. 4, p. 489, doi. 10.1134/S1063782619040067
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The Growth of InAs<sub>x</sub>Sb<sub>1 –</sub><sub>x</sub> Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy.
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- Semiconductors, 2019, v. 53, n. 4, p. 503, doi. 10.1134/S1063782619040092
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Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy.
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- Semiconductors, 2019, v. 53, n. 4, p. 477, doi. 10.1134/S106378261904002X
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Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n<sup>+</sup>–n-Si Diffusion Silicon Structures.
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- Semiconductors, 2019, v. 53, n. 4, p. 469, doi. 10.1134/S1063782619040055
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Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures.
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- Semiconductors, 2019, v. 53, n. 4, p. 465, doi. 10.1134/S1063782619040109
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Resonance Absorption of Electromagnetic Radiation in a Phosphorene Single Layer.
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- Semiconductors, 2019, v. 53, n. 4, p. 458, doi. 10.1134/S1063782619040134
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Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures.
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- Semiconductors, 2019, v. 53, n. 4, p. 452, doi. 10.1134/S1063782619040122
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Preparation and Characterization of Sol–Gel Dip Coated Al: ZnO (AZO) Thin Film for Opto-Electronic Application.
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- Semiconductors, 2019, v. 53, n. 4, p. 447, doi. 10.1134/S1063782619040286
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Simulated Contrast of Two Dislocations.
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- Semiconductors, 2019, v. 53, n. 4, p. 442, doi. 10.1134/S1063782619040195
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Effect of a Second-Order Phase Transition on the Electrical Conductivity of Metal/Semiconductor Structures.
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- Semiconductors, 2019, v. 53, n. 4, p. 439, doi. 10.1134/S1063782619040201
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Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing.
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- Semiconductors, 2019, v. 53, n. 4, p. 434, doi. 10.1134/S1063782619040237
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Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies.
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- Semiconductors, 2019, v. 53, n. 4, p. 428, doi. 10.1134/S1063782619040043
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Thermoelectric Characteristics of Heavily Doped p-Type Lead Telluride at Different Heavy-Hole Band Depths.
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- Semiconductors, 2019, v. 53, n. 4, p. 419, doi. 10.1134/S1063782619040079
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Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film.
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- Semiconductors, 2019, v. 53, n. 4, p. 415, doi. 10.1134/S1063782619040250
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Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon.
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- Semiconductors, 2019, v. 53, n. 4, p. 411, doi. 10.1134/S1063782619040225
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