First-principles calculations of the electronic and structural properties of GaSb.
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- Semiconductors, 2016, v. 50, n. 10, p. 1280, doi. 10.1134/S1063782616100110
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- Publication type:
- Article
Works in Semiconductors, 2016, Vol 50, Issue 10
Results: 24
1
2
Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals.
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- Semiconductors, 2016, v. 50, n. 10, p. 1287, doi. 10.1134/S1063782616100213
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- Article
3
Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons.
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- Semiconductors, 2016, v. 50, n. 10, p. 1291, doi. 10.1134/S1063782616100122
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- Article
4
Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm.
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- Semiconductors, 2016, v. 50, n. 10, p. 1299, doi. 10.1134/S1063782616100067
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- Article
5
UV and IR emission intensity in ZnO films, nanorods, and bulk single crystals doped with Er and additionally introduced impurities.
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- Semiconductors, 2016, v. 50, n. 10, p. 1304, doi. 10.1134/S106378261610016X
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- Article
6
Self-synchronization of the modulation of energy-levels population with electrons in GaAs induced by picosecond pulses of probe radiation and intrinsic stimulated emission.
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- Semiconductors, 2016, v. 50, n. 10, p. 1312, doi. 10.1134/S106378261610002X
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- Article
7
Reflectance of a PbSbTe crystal in a wide spectral range.
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- Semiconductors, 2016, v. 50, n. 10, p. 1322, doi. 10.1134/S1063782616100183
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- Publication type:
- Article
8
The C 1 s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface.
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- Semiconductors, 2016, v. 50, n. 10, p. 1327, doi. 10.1134/S1063782616100080
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- Publication type:
- Article
9
Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen.
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- Semiconductors, 2016, v. 50, n. 10, p. 1369, doi. 10.1134/S1063782616100109
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- Article
10
Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures.
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- Semiconductors, 2016, v. 50, n. 10, p. 1333, doi. 10.1134/S1063782616100079
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- Publication type:
- Article
11
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures.
- Published in:
- Semiconductors, 2016, v. 50, n. 10, p. 1377, doi. 10.1134/S1063782616100134
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- Article
12
GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics.
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- Semiconductors, 2016, v. 50, n. 10, p. 1338, doi. 10.1134/S1063782616100146
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- Publication type:
- Article
13
Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p-n structures.
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- Semiconductors, 2016, v. 50, n. 10, p. 1352, doi. 10.1134/S1063782616100171
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- Publication type:
- Article
14
Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling.
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- Semiconductors, 2016, v. 50, n. 10, p. 1362, doi. 10.1134/S1063782616100055
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- Publication type:
- Article
15
Effect of the chemical composition of Cu-In-Ga-Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells.
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- Semiconductors, 2016, v. 50, n. 10, p. 1344, doi. 10.1134/S1063782616100195
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- Publication type:
- Article
16
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis.
- Published in:
- Semiconductors, 2016, v. 50, n. 10, p. 1383, doi. 10.1134/S1063782616100237
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- Publication type:
- Article
17
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture.
- Published in:
- Semiconductors, 2016, v. 50, n. 10, p. 1390, doi. 10.1134/S1063782616100092
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- Publication type:
- Article
18
On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (-197°C ≤ T ≤ +85°C).
- Published in:
- Semiconductors, 2016, v. 50, n. 10, p. 1356, doi. 10.1134/S1063782616100043
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- Article
19
Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110-120 K).
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- Semiconductors, 2016, v. 50, n. 10, p. 1396, doi. 10.1134/S1063782616100249
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- Publication type:
- Article
20
Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range.
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- Semiconductors, 2016, v. 50, n. 10, p. 1403, doi. 10.1134/S1063782616100158
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- Publication type:
- Article
21
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency.
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- Semiconductors, 2016, v. 50, n. 10, p. 1408, doi. 10.1134/S1063782616100250
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- Publication type:
- Article
22
Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ SiN passivation.
- Published in:
- Semiconductors, 2016, v. 50, n. 10, p. 1416, doi. 10.1134/S1063782616100225
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- Article
23
Energy spectrum of charge carriers in TlInYbTe solid solutions.
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- Semiconductors, 2016, v. 50, n. 10, p. 1273, doi. 10.1134/S1063782616100031
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- Publication type:
- Article
24
On the gain properties of 'thin' elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm.
- Published in:
- Semiconductors, 2016, v. 50, n. 10, p. 1412, doi. 10.1134/S1063782616100201
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- Publication type:
- Article