Exciton emission of crystalline Zn(S)Se thin films arranged in microcavities based on amorphous insulating coatings.
- Published in:
- Semiconductors, 2016, v. 50, n. 1, p. 8, doi. 10.1134/S1063782616010115
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- Publication type:
- Article
Works in Semiconductors, 2016, Vol 50, Issue 1
Results: 23
1
2
Simulation of the β-voltaic effect in silicon pin structures irradiated with electrons from a nickel-63 β source.
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- Semiconductors, 2016, v. 50, n. 1, p. 16, doi. 10.1134/S1063782616010188
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- Article
3
On a combined approach to studying the correlation parameters of self-organizing structures.
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- Semiconductors, 2016, v. 50, n. 1, p. 22, doi. 10.1134/S1063782616010048
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- Publication type:
- Article
4
On the complex structure of the optical spectra of a tetragonal calomel single crystal in a wide energy range.
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- Semiconductors, 2016, v. 50, n. 1, p. 29, doi. 10.1134/S1063782616010206
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- Publication type:
- Article
5
On the specific electrophysical properties of n-InSe single crystals.
- Published in:
- Semiconductors, 2016, v. 50, n. 1, p. 34, doi. 10.1134/S1063782616010024
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- Publication type:
- Article
6
On the preparation and photoelectric properties of TlInSnSe ( x = 0.1-0.25) alloys.
- Published in:
- Semiconductors, 2016, v. 50, n. 1, p. 38, doi. 10.1134/S1063782616010073
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- Publication type:
- Article
7
Structure and optical properties of ZnO with silver nanoparticles.
- Published in:
- Semiconductors, 2016, v. 50, n. 1, p. 43, doi. 10.1134/S1063782616010139
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- Publication type:
- Article
8
Optical properties of PbS thin films.
- Published in:
- Semiconductors, 2016, v. 50, n. 1, p. 50, doi. 10.1134/S1063782616010036
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- Publication type:
- Article
9
Morphological stability of the atomically clean surface of silicon (100) crystals after microwave plasma-chemical processing.
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- Semiconductors, 2016, v. 50, n. 1, p. 54, doi. 10.1134/S106378261601022X
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- Publication type:
- Article
10
Growth, structure, and properties of GaAs-based (GaAs)(Ge)(ZnSe) epitaxial films.
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- Semiconductors, 2016, v. 50, n. 1, p. 59, doi. 10.1134/S1063782616010231
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- Publication type:
- Article
11
Photodetectors based on CuInS.
- Published in:
- Semiconductors, 2016, v. 50, n. 1, p. 106, doi. 10.1134/S1063782616010061
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- Publication type:
- Article
12
Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry.
- Published in:
- Semiconductors, 2016, v. 50, n. 1, p. 83, doi. 10.1134/S1063782616010140
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- Publication type:
- Article
13
On controlling the electronic states of shallow donors using a finite-size metal gate.
- Published in:
- Semiconductors, 2016, v. 50, n. 1, p. 89, doi. 10.1134/S1063782616010127
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- Publication type:
- Article
14
Polarized photoluminescence of nc-Si-SiO nanostructures.
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- Semiconductors, 2016, v. 50, n. 1, p. 97, doi. 10.1134/S1063782616010164
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- Publication type:
- Article
15
Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters.
- Published in:
- Semiconductors, 2016, v. 50, n. 1, p. 132, doi. 10.1134/S1063782616010097
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- Publication type:
- Article
16
Vertical heterostructures based on graphene and other 2D materials.
- Published in:
- Semiconductors, 2016, v. 50, n. 1, p. 66, doi. 10.1134/S106378261601005X
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- Publication type:
- Article
17
Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals.
- Published in:
- Semiconductors, 2016, v. 50, n. 1, p. 112, doi. 10.1134/S1063782616010103
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- Publication type:
- Article
18
Organic light-emitting diodes based on a series of new polythienothiophene complexes and highly luminescent quantum dots.
- Published in:
- Semiconductors, 2016, v. 50, n. 1, p. 120, doi. 10.1134/S1063782616010218
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- Publication type:
- Article
19
Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm.
- Published in:
- Semiconductors, 2016, v. 50, n. 1, p. 125, doi. 10.1134/S1063782616010085
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- Publication type:
- Article
20
Specific features of the current-voltage characteristics of SiO/4 H-SiC MIS structures with phosphorus implanted into silicon carbide.
- Published in:
- Semiconductors, 2016, v. 50, n. 1, p. 103, doi. 10.1134/S1063782616010152
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- Publication type:
- Article
21
Formation of graphite/sic structures by the thermal decomposition of silicon carbide.
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- Semiconductors, 2016, v. 50, n. 1, p. 138, doi. 10.1134/S1063782616010176
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- Publication type:
- Article
22
Erratum to: 'Vacancies in Epitaxial Graphene'.
- Published in:
- 2016
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- Publication type:
- Erratum
23
Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer.
- Published in:
- Semiconductors, 2016, v. 50, n. 1, p. 1, doi. 10.1134/S106378261601019X
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- Publication type:
- Article