Works in Semiconductors, 2010, Vol 44, Issue 10

Results: 26

Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1386, doi. 10.1134/S1063782610100258
By:
- Alexandrov, P. A.;
- Demakov, K. D.;
- Shemardov, S. G.;
- Kuznetsov, Yu. Yu.
Publication type:
Article
Spontaneous emission of holes excited by an electric field in germanium.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1289, doi. 10.1134/S1063782610100088
By:
- Pokrovskii, Ya. E.;
- Khvalkovskii, N. A.
Publication type:
Article
Mixing of hole states in GaAs/AlAs(110) heterostructures.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1301, doi. 10.1134/S1063782610100118
By:
- Chernyshov, V. N.
Publication type:
Article
Repetition of the shape of the ultrafast self-modulation of the optical absorption spectrum upon varying the energy of pulse of GaAs pumping.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1285, doi. 10.1134/S1063782610100076
By:
- Ageeva, N. V.;
- Bronevoi, I. L.;
- Zabegaev, D. N.;
- Krivonosov, A. N.
Publication type:
Article
Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1389, doi. 10.1134/S106378261010026X
By:
- Lebedev, A. A.;
- Strel'chuk, A. M.;
- Shamshur, D. V.;
- Oganesyan, G. A.;
- Lebedev, S. P.;
- Mynbaeva, M. G.;
- Sadokhin, A. V.
Publication type:
Article
Dependence of the growth rate of an AlN layer on nitrogen pressure in a reactor for sublimation growth of AlN crystals.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1383, doi. 10.1134/S1063782610100246
By:
- Wolfson, A. A.;
- Mokhov, E. N.
Publication type:
Article
Recombination of charge carriers in the GaAs-based p- i- n diode.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1362, doi. 10.1134/S1063782610100209
By:
- Ayzenshtat, G. I.;
- Yushenko, A. Y.;
- Gushchin, S. M.;
- Dmitriev, D. V.;
- Zhuravlev, K. S.;
- Toropov, A. I.
Publication type:
Article
Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900-920 nm).
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1370, doi. 10.1134/S1063782610100222
By:
- Ladugin, M. A.;
- Lyutetskiy, A. V.;
- Marmalyuk, A. A.;
- Padalitsa, A. A.;
- Pikhtin, N. A.;
- Podoskin, A. A.;
- Rudova, N. A.;
- Slipchenko, S. O.;
- Shashkin, I. S.;
- Bondarev, A. D.;
- Tarasov, I. S.
Publication type:
Article
Quantum spin Hall effect in nanostructures based on cadmium fluoride.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1328, doi. 10.1134/S1063782610100155
By:
- Bagraev, N. T.;
- Guimbitskaya, O. N.;
- Klyachkin, L. E.;
- Koudryavtsev, A. A.;
- Malyarenko, A. M.;
- Romanov, V. V.;
- Ryskin, A. I.;
- Shcheulin, A. S.
Publication type:
Article
The structure and optical properties of nanocrytalline lead sulfide films.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1349, doi. 10.1134/S1063782610100180
By:
- Sadovnikov, S. I.;
- Kozhevnikova, N. S.;
- Rempel, A. A.
Publication type:
Article
Quantum wells on 3 C-SiC/ NH-SiC heterojunctions. Calculation of spontaneous polarization and electric field strength in experiments.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1313, doi. 10.1134/S1063782610100131
By:
- Sbruev, I. S.;
- Sbruev, S. B.
Publication type:
Article
Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1308, doi. 10.1134/S106378261010012X
By:
- Shatalina, E. S.;
- Blokhin, S. A.;
- Nadtochy, A. M.;
- Payusov, A. S.;
- Savelyev, A. V.;
- Maximov, M. V.;
- Zhukov, A. E.;
- Ledentsov, N. N.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Ustinov, V. M.
Publication type:
Article
The temperature dependence of internal optical losses in semiconductor lasers (λ = 900-920 nm).
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1365, doi. 10.1134/S1063782610100210
By:
- Pikhtin, N. A.;
- Slipchenko, S. O.;
- Shashkin, I. S.;
- Ladugin, M. A.;
- Marmalyuk, A. A.;
- Podoskin, A. A.;
- Tarasov, I. S.
Publication type:
Article
Numerical simulation of evolution of electron-hole avalanches and streamers in silicon in a uniform electric field.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1266, doi. 10.1134/S1063782610100040
By:
- Kyuregyan, A. S.
Publication type:
Article
The effect of the dynamic adsorption mode on impedance of composite structures with porous silicon.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1342, doi. 10.1134/S1063782610100179
By:
- Karlach, A. Yu.;
- Kuznetsov, G. V.;
- Litvinenko, S. V.;
- Milovanov, Yu. S.;
- Skryshevsky, V. A.
Publication type:
Article
Open-circuit voltage, fill factor, and efficiency of a CdS/CdTe solar cell.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1375, doi. 10.1134/S1063782610100234
By:
- Kosyachenko, L. A.;
- Grushko, E. V.
Publication type:
Article
A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1357, doi. 10.1134/S1063782610100192
By:
- Gordeev, N. Yu.;
- Novikov, I. I.;
- Kuznetsov, A. M.;
- Shernyakov, Yu. M.;
- Maximov, M. V.;
- Zhukov, A. E.;
- Chunareva, A. V.;
- Payusov, A. S.;
- Livshits, D. A.;
- Kovsh, A. R.
Publication type:
Article
Formation of composite InGaN/GaN/InAlN quantum dots.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1338, doi. 10.1134/S1063782610100167
By:
- Tsatsul'nikov, A. F.;
- Zavarin, E. E.;
- Kryzhanovskaya, N. V.;
- Lundin, W. V.;
- Saharov, A. V.;
- Usov, S. O.;
- Brunkov, P. N.;
- Goncharov, V. V.;
- Cherkashin, N. A.;
- Hytch, M.
Publication type:
Article
Heat-transfer phenomena in alloys.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1275, doi. 10.1134/S1063782610100052
By:
- Aliev, S. A.;
- Selim-zade, R. I.;
- Ragimov, S. S.
Publication type:
Article
Simulation of relaxation times and energy spectra of the CdTe/HgCdTe/CdTe quantum well for variable valence band offset, well width, and composition x.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1321, doi. 10.1134/S1063782610100143
By:
- Melezhik, E. O.;
- Gumenjuk-Sichevska, J. V.;
- Sizov, F. F.
Publication type:
Article
On the nature of charge carrier scattering in AgSe at low temperatures.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1280, doi. 10.1134/S1063782610100064
By:
- Jafarov, M. B.
Publication type:
Article
Oxygen in Ge:Sn.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1253, doi. 10.1134/S1063782610100015
By:
- Khirunenko, L. I.;
- Pomozov, Yu. V.;
- Sosnin, M. G.;
- Duvanskii, A. V.;
- Abrosimov, N. V.;
- Riemann, H.
Publication type:
Article
Quantum model of electron accumulation at charged boundaries of heavily doped semiconductor films.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1297, doi. 10.1134/S1063782610100106
By:
- Gergel, V. A.;
- Verhovtseva, A. V.
Publication type:
Article
Differential capacitance of a semiconductor film.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1292, doi. 10.1134/S106378261010009X
By:
- Tsurikov, D. E.;
- Yafyasov, A. M.
Publication type:
Article
Mesoscopic variance of dislocation displacements in semiconductor crystals.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1258, doi. 10.1134/S1063782610100027
By:
- Petukhov, B. V.
Publication type:
Article
Specific features of intervalley scattering of charge carriers in n-Si at high temperatures.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1263, doi. 10.1134/S1063782610100039
By:
- Fedosov, A. V.;
- Luniov, S. V.;
- Fedosov, S. A.
Publication type:
Article