Works in Semiconductors, 2010, Vol 44, Issue 10

Results: 26

Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1386, doi. 10.1134/S1063782610100258

By:

Alexandrov, P. A.;
Demakov, K. D.;
Shemardov, S. G.;
Kuznetsov, Yu. Yu.

Publication type:

Article

Recombination of charge carriers in the GaAs-based p- i- n diode.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1362, doi. 10.1134/S1063782610100209

By:

Ayzenshtat, G. I.;
Yushenko, A. Y.;
Gushchin, S. M.;
Dmitriev, D. V.;
Zhuravlev, K. S.;
Toropov, A. I.

Publication type:

Article

Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900-920 nm).

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1370, doi. 10.1134/S1063782610100222

By:

Ladugin, M. A.;
Lyutetskiy, A. V.;
Marmalyuk, A. A.;
Padalitsa, A. A.;
Pikhtin, N. A.;
Podoskin, A. A.;
Rudova, N. A.;
Slipchenko, S. O.;
Shashkin, I. S.;
Bondarev, A. D.;
Tarasov, I. S.

Publication type:

Article

Spontaneous emission of holes excited by an electric field in germanium.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1289, doi. 10.1134/S1063782610100088

By:

Pokrovskii, Ya. E.;
Khvalkovskii, N. A.

Publication type:

Article

Repetition of the shape of the ultrafast self-modulation of the optical absorption spectrum upon varying the energy of pulse of GaAs pumping.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1285, doi. 10.1134/S1063782610100076

By:

Ageeva, N. V.;
Bronevoi, I. L.;
Zabegaev, D. N.;
Krivonosov, A. N.

Publication type:

Article

Mixing of hole states in GaAs/AlAs(110) heterostructures.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1301, doi. 10.1134/S1063782610100118

By:

Chernyshov, V. N.

Publication type:

Article

Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1389, doi. 10.1134/S106378261010026X

By:

Lebedev, A. A.;
Strel'chuk, A. M.;
Shamshur, D. V.;
Oganesyan, G. A.;
Lebedev, S. P.;
Mynbaeva, M. G.;
Sadokhin, A. V.

Publication type:

Article

Quantum spin Hall effect in nanostructures based on cadmium fluoride.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1328, doi. 10.1134/S1063782610100155

By:

Bagraev, N. T.;
Guimbitskaya, O. N.;
Klyachkin, L. E.;
Koudryavtsev, A. A.;
Malyarenko, A. M.;
Romanov, V. V.;
Ryskin, A. I.;
Shcheulin, A. S.

Publication type:

Article

The structure and optical properties of nanocrytalline lead sulfide films.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1349, doi. 10.1134/S1063782610100180

By:

Sadovnikov, S. I.;
Kozhevnikova, N. S.;
Rempel, A. A.

Publication type:

Article

Quantum wells on 3 C-SiC/ NH-SiC heterojunctions. Calculation of spontaneous polarization and electric field strength in experiments.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1313, doi. 10.1134/S1063782610100131

By:

Sbruev, I. S.;
Sbruev, S. B.

Publication type:

Article

Dependence of the growth rate of an AlN layer on nitrogen pressure in a reactor for sublimation growth of AlN crystals.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1383, doi. 10.1134/S1063782610100246

By:

Wolfson, A. A.;
Mokhov, E. N.

Publication type:

Article

The temperature dependence of internal optical losses in semiconductor lasers (λ = 900-920 nm).

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1365, doi. 10.1134/S1063782610100210

By:

Pikhtin, N. A.;
Slipchenko, S. O.;
Shashkin, I. S.;
Ladugin, M. A.;
Marmalyuk, A. A.;
Podoskin, A. A.;
Tarasov, I. S.

Publication type:

Article

Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1308, doi. 10.1134/S106378261010012X

By:

Shatalina, E. S.;
Blokhin, S. A.;
Nadtochy, A. M.;
Payusov, A. S.;
Savelyev, A. V.;
Maximov, M. V.;
Zhukov, A. E.;
Ledentsov, N. N.;
Kovsh, A. R.;
Mikhrin, S. S.;
Ustinov, V. M.

Publication type:

Article

Heat-transfer phenomena in alloys.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1275, doi. 10.1134/S1063782610100052

By:

Aliev, S. A.;
Selim-zade, R. I.;
Ragimov, S. S.

Publication type:

Article

Numerical simulation of evolution of electron-hole avalanches and streamers in silicon in a uniform electric field.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1266, doi. 10.1134/S1063782610100040

By:

Kyuregyan, A. S.

Publication type:

Article

The effect of the dynamic adsorption mode on impedance of composite structures with porous silicon.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1342, doi. 10.1134/S1063782610100179

By:

Karlach, A. Yu.;
Kuznetsov, G. V.;
Litvinenko, S. V.;
Milovanov, Yu. S.;
Skryshevsky, V. A.

Publication type:

Article

Open-circuit voltage, fill factor, and efficiency of a CdS/CdTe solar cell.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1375, doi. 10.1134/S1063782610100234

By:

Kosyachenko, L. A.;
Grushko, E. V.

Publication type:

Article

A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1357, doi. 10.1134/S1063782610100192

By:

Gordeev, N. Yu.;
Novikov, I. I.;
Kuznetsov, A. M.;
Shernyakov, Yu. M.;
Maximov, M. V.;
Zhukov, A. E.;
Chunareva, A. V.;
Payusov, A. S.;
Livshits, D. A.;
Kovsh, A. R.

Publication type:

Article

Formation of composite InGaN/GaN/InAlN quantum dots.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1338, doi. 10.1134/S1063782610100167

By:

Tsatsul'nikov, A. F.;
Zavarin, E. E.;
Kryzhanovskaya, N. V.;
Lundin, W. V.;
Saharov, A. V.;
Usov, S. O.;
Brunkov, P. N.;
Goncharov, V. V.;
Cherkashin, N. A.;
Hytch, M.

Publication type:

Article

On the nature of charge carrier scattering in AgSe at low temperatures.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1280, doi. 10.1134/S1063782610100064

By:

Jafarov, M. B.

Publication type:

Article

Oxygen in Ge:Sn.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1253, doi. 10.1134/S1063782610100015

By:

Khirunenko, L. I.;
Pomozov, Yu. V.;
Sosnin, M. G.;
Duvanskii, A. V.;
Abrosimov, N. V.;
Riemann, H.

Publication type:

Article

Simulation of relaxation times and energy spectra of the CdTe/HgCdTe/CdTe quantum well for variable valence band offset, well width, and composition x.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1321, doi. 10.1134/S1063782610100143

By:

Melezhik, E. O.;
Gumenjuk-Sichevska, J. V.;
Sizov, F. F.

Publication type:

Article

Mesoscopic variance of dislocation displacements in semiconductor crystals.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1258, doi. 10.1134/S1063782610100027

By:

Petukhov, B. V.

Publication type:

Article

Specific features of intervalley scattering of charge carriers in n-Si at high temperatures.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1263, doi. 10.1134/S1063782610100039

By:

Fedosov, A. V.;
Luniov, S. V.;
Fedosov, S. A.

Publication type:

Article

Quantum model of electron accumulation at charged boundaries of heavily doped semiconductor films.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1297, doi. 10.1134/S1063782610100106

By:

Gergel, V. A.;
Verhovtseva, A. V.

Publication type:

Article

Differential capacitance of a semiconductor film.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1292, doi. 10.1134/S106378261010009X

By:

Tsurikov, D. E.;
Yafyasov, A. M.

Publication type:

Article