Works in Semiconductors, 2005, Vol 39, Issue 5
Results: 22
The Effect of Oxygen on the ZnS Electronic Energy-Band Structure.
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- Semiconductors, 2005, v. 39, n. 5, p. 485, doi. 10.1134/1.1923552
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- Article
Magnetic Ordering Effects in Heavily Doped GaAs:Fe Crystals.
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- Semiconductors, 2005, v. 39, n. 5, p. 493, doi. 10.1134/1.1923553
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- Article
The Electrical and Optical Properties of InP Irradiated with High Integrated Fluxes of Neutrons.
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- Semiconductors, 2005, v. 39, n. 5, p. 499, doi. 10.1134/1.1923554
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- Article
The Conductivity and Hall Effect in CdF<sub>2</sub>:In and CdF<sub>2</sub>:Y.
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- Semiconductors, 2005, v. 39, n. 5, p. 506, doi. 10.1134/1.1923555
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- Article
The Conductivity Tensor and Frequency of Electron Momentum Relaxation in the Case of Scattering by Ionized Impurities in a Magnetic Field: The Density Matrix Method.
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- Semiconductors, 2005, v. 39, n. 5, p. 514, doi. 10.1134/1.1923556
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- Article
The Extrinsic Photoconductivity of Chalcogens in Ge<sub>1 – x</sub>Si<sub>x</sub> Solid Solutions.
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- Semiconductors, 2005, v. 39, n. 5, p. 521, doi. 10.1134/1.1923557
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- Article
Specific Features of Epitaxial-Film Formation on Porous III–V Substrates.
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- Semiconductors, 2005, v. 39, n. 5, p. 523, doi. 10.1134/1.1923558
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- Article
p<sup>+</sup>-Si–n-CdF<sub>2</sub> Heterojunctions.
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- Semiconductors, 2005, v. 39, n. 5, p. 528, doi. 10.1134/1.1923559
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- Article
Injection Currents in Narrow-Gap (Pb<sub>1 – x</sub>Sn<sub>x</sub>Te):In Insulators.
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- Semiconductors, 2005, v. 39, n. 5, p. 533, doi. 10.1134/1.1923560
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- Article
The Generation–Recombination Mechanism of Charge Transport in a Thin-Film CdS/CdTe Heterojunction.
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- Semiconductors, 2005, v. 39, n. 5, p. 539, doi. 10.1134/1.1923561
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- Article
The Resonant Tunneling of Holes through Double-Barrier Structures with InAs QDs at the Center of a GaAs Quantum Well.
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- Semiconductors, 2005, v. 39, n. 5, p. 543, doi. 10.1134/1.1923562
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- Article
Threshold Behavior of the Formation of Nanometer Islands in a Ge/Si(100) System in the Presence of Sb.
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- Semiconductors, 2005, v. 39, n. 5, p. 547, doi. 10.1134/1.1923563
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- Article
The Formation of Silicon Nanocrystals in SiO<sub>2</sub> Layers by the Implantation of Si Ions with Intermediate Heat Treatments.
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- Semiconductors, 2005, v. 39, n. 5, p. 552, doi. 10.1134/1.1923564
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The Diffusion Mechanism in the Formation of GaAs and AlGaAs Nanowhiskers during the Process of Molecular-Beam Epitaxy.
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- Semiconductors, 2005, v. 39, n. 5, p. 557, doi. 10.1134/1.1923565
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- Article
The Electronic and Emissive Properties of Au-Doped Porous Silicon.
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- Semiconductors, 2005, v. 39, n. 5, p. 565, doi. 10.1134/1.1923566
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- Article
The Influence of Vacuum Annealing Temperature on the Fundamental Absorption Edge and Structural Relaxation of a-SiC:H Films.
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- Semiconductors, 2005, v. 39, n. 5, p. 572, doi. 10.1134/1.1923567
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- Article
Simulation of the Electrical Properties of Polycrystalline Ceramic Semiconductors with Submicrometer Grain Sizes.
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- Semiconductors, 2005, v. 39, n. 5, p. 577, doi. 10.1134/1.1923568
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Features of the Vibrational Spectra of Diamond-like and Polymer-like a-C:H Films.
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- Semiconductors, 2005, v. 39, n. 5, p. 585, doi. 10.1134/1.1923569
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- Article
Electric Fatigue in MOS Structures due to Lowering of the Potential Barrier during the Field Ionization of Insulator Atoms.
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- Semiconductors, 2005, v. 39, n. 5, p. 591, doi. 10.1134/1.1923570
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- Article
Effect of Uniaxial Compression on the Photoconversion Parameters in a p-GaSe–n-InSe Optical Contact.
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- Semiconductors, 2005, v. 39, n. 5, p. 600, doi. 10.1134/1.1923572
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- Article
The Influence of Gain Saturation on the Output Power of Quantum-Well Semiconductor Lasers.
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- Semiconductors, 2005, v. 39, n. 5, p. 603, doi. 10.1134/1.1923573
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- Article
Tunnel-Recombination Currents and Electroluminescence Efficiency in InGaN/GaN LEDs.
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- Semiconductors, 2005, v. 39, n. 5, p. 594, doi. 10.1134/1.1923571
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- Article