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Dissociation Energies of a CiCs Complex and the A Center in Silicon.
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- Semiconductors, 2002, v. 36, n. 8, p. 845, doi. 10.1134/1.1500457
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- Article
Viktor Il'ich Fistul' (on his 75th birthday).
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- Semiconductors, 2002, v. 36, n. 8, p. 950, doi. 10.1134/1.1500479
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- Article
Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics.
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- Semiconductors, 2002, v. 36, n. 8, p. 944, doi. 10.1134/1.1500478
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- Article
Fabrication and Properties of Amorphous Hydrogenated Boron Carbide Films.
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- Semiconductors, 2002, v. 36, n. 8, p. 941
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- Article
Gamma-Irradiation-Induced Metastable States of Undoped Amorphous Hydrogenated Silicon.
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- Semiconductors, 2002, v. 36, n. 8, p. 937, doi. 10.1134/1.1500476
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- Article
Measurements of Parameters of the Low-Temperature Molecular-Beam Epitaxy of GaAs.
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- Semiconductors, 2002, v. 36, n. 8, p. 837, doi. 10.1134/1.1500455
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- Article
Manifestation of A(+) Centers in the Luminescence of Two-Dimensional GaAs/AlGaAs Structures.
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- Semiconductors, 2002, v. 36, n. 8, p. 929, doi. 10.1134/1.1500474
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- Article
Anomalies of the Fractional Quantum Hall Effect in a Wide Ballistic Wire.
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- Semiconductors, 2002, v. 36, n. 8, p. 921, doi. 10.1134/1.1500472
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- Article
Special Features of Electrical Conductivity in a Parabolic Quantum Well in a Magnetic Field.
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- Semiconductors, 2002, v. 36, n. 8, p. 924, doi. 10.1134/1.1500473
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- Article
Nonlinear Response and Nonlinear Coherent Generation in Resonant-Tunneling Diode in a Broad Frequency Range.
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- Semiconductors, 2002, v. 36, n. 8, p. 916, doi. 10.1134/1.1500471
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- Article
Calculations of the Charge-Carrier Mobility and the Thermoelectric Figure of Merit for Multiple-Quantum-Well Structures.
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- Semiconductors, 2002, v. 36, n. 8, p. 908, doi. 10.1134/1.1500470
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- Article
Two-Dimensional p-n Junction under Equilibrium Conditions.
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- Semiconductors, 2002, v. 36, n. 8, p. 903, doi. 10.1134/1.1500469
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- Article
Structure of Heterointerfaces and Photoluminescence Properties of GaAs/AlAs Superlattices Grown on (311)A and (311)B Surfaces: Comparative Analysis.
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- Semiconductors, 2002, v. 36, n. 8, p. 895, doi. 10.1134/1.1500467
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- Article
Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound.
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- Semiconductors, 2002, v. 36, n. 8, p. 899, doi. 10.1134/1.1500468
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- Article
Low-Threshold Defect Formation and Modification of Ge Surface Layer under Elastic and Elastoplastic Pulsed Laser Effects.
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- Semiconductors, 2002, v. 36, n. 8, p. 883, doi. 10.1134/1.1500465
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- Article
Electron Tunneling through a Double Barrier in a Reverse-Biased Metal-Oxide-Silicon Structure.
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- Semiconductors, 2002, v. 36, n. 8, p. 889, doi. 10.1134/1.1500466
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- Article
Time-Resolved Photoluminescence of Polycrystalline GaN Layers on Metal Substrates.
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- Semiconductors, 2002, v. 36, n. 8, p. 878, doi. 10.1134/1.1500464
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- Article
Photoconductivity of Coarse-Grained CdTe Polycrystals.
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- Semiconductors, 2002, v. 36, n. 8, p. 874, doi. 10.1134/1.1500463
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- Article
Electrical and Thermoelectric Properties of p-Ag2 Te.
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- Semiconductors, 2002, v. 36, n. 8, p. 869, doi. 10.1134/1.1500462
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- Article
Optical Properties of Bulk and Epitaxial Unordered Gax In1 - x P Semiconductor Alloys.
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- Semiconductors, 2002, v. 36, n. 8, p. 863, doi. 10.1134/1.1500461
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- Article
Influence of Tellurium Impurity on the Properties of Ga1 - X InXAsYSb1 - Y (X > 0.22) Solid Solutions.
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- Semiconductors, 2002, v. 36, n. 8, p. 855, doi. 10.1134/1.1500460
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- Article
Local Structure of Zinc Impurity Centers in Lead Chalcogenides and Pb1 - x Snx Te Solid Solutions.
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- Semiconductors, 2002, v. 36, n. 8, p. 852, doi. 10.1134/1.1500459
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- Article
Initial Stages of Growth of Diamond Island Films on Crystalline Silicon.
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- Semiconductors, 2002, v. 36, n. 8, p. 848, doi. 10.1134/1.1500458
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- Article
Threshold of Inelastic Strain Formation in Si and GaAs Surface Layers under Multiple Pulsed Laser Irradiation.
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- Semiconductors, 2002, v. 36, n. 8, p. 841, doi. 10.1134/1.1500456
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- Article
One-Dimensional Photonic Crystal Obtained by Vertical Anisotropic Etching of Silicon.
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- Semiconductors, 2002, v. 36, n. 8, p. 932, doi. 10.1134/1.1500475
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- Article