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Parameters of Excitons in Monoclinic Zinc Diarsenide.
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- Semiconductors, 2002, v. 36, n. 7, p. 755, doi. 10.1134/1.1493744
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- Article
Analysis of the Size-Distribution Function of Metallic Nanoclusters in a Hydrogenated Amorphous Carbon Host.
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- Semiconductors, 2002, v. 36, n. 7, p. 743, doi. 10.1134/1.1493741
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- Article
Modification of the Electrical and Photoelectric Properties of Mg[sub 0.15]Cd[sub 0.85]Te Solid Solutions as a Result of Pulsed Laser Irradiation within the Transparency Range.
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- Semiconductors, 2002, v. 36, n. 7, p. 747, doi. 10.1134/1.1493742
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Titanium, Vanadium, and Nickel Impurities in 3C-SiC: Electronic Structure and Lattice Relaxation Effects.
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- Semiconductors, 2002, v. 36, n. 7, p. 751, doi. 10.1134/1.1493743
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- Article
Switching Effect in Si–CdS Heterojunctions Synthesized in Highly Nonequilibrium Conditions.
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- Semiconductors, 2002, v. 36, n. 7, p. 789, doi. 10.1134/1.1493750
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- Article
Wannier–Stark Localization in the Natural Superlattice of Silicon Carbide Polytypes.
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- Semiconductors, 2002, v. 36, n. 7, p. 717, doi. 10.1134/1.1493739
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- Article
Effect of Long-Term Annealing on Accumulation of Impurities.
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- Semiconductors, 2002, v. 36, n. 7, p. 740, doi. 10.1134/1.1493740
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- Article
The Effect of Composition on the Properties and Defect Structure of the CdS–Ga[sub 2]S[sub 3] Solid Solution.
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- Semiconductors, 2002, v. 36, n. 7, p. 763, doi. 10.1134/1.1493746
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- Article
Microwave Magnetoresistance of Compensated p-Ge:Ga in the Region of the Insulator–Metal Phase Transition.
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- Semiconductors, 2002, v. 36, n. 7, p. 772, doi. 10.1134/1.1493747
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- Article
Thermally Stimulated Currents in MnIn[sub 2]S[sub 4] Single Crystals.
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- Semiconductors, 2002, v. 36, n. 7, p. 782, doi. 10.1134/1.1493748
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- Article
E[sub 0] Photoreflectance Spectra of Semiconductor Structures with a High Density of Interface States.
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- Semiconductors, 2002, v. 36, n. 7, p. 784, doi. 10.1134/1.1493749
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- Article
Structure and Properties of Silicon Carbide Grown on Porous Substrate by Vacuum Sublimation Epitaxy.
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- Semiconductors, 2002, v. 36, n. 7, p. 758, doi. 10.1134/1.1493745
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- Article
Special Features of the Magnetodiode Effect in Multivalley Semiconductors at Low Temperatures.
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- Semiconductors, 2002, v. 36, n. 7, p. 793, doi. 10.1134/1.1493751
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- Article
Behavior of Charge in a Buried Insulator of Silicon-on-Insulator Structures Subjected to Electric Fields.
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- Semiconductors, 2002, v. 36, n. 7, p. 800, doi. 10.1134/1.1493752
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- Article
Study of the Effect of Electron Irradiation on a GaSe–SiO[sub 2] Structure by Spectroscopic Methods.
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- Semiconductors, 2002, v. 36, n. 7, p. 805, doi. 10.1134/1.1493753
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- Article
Calculation of the Low-Field Mobility of Quasi-Two-Dimensional Electrons in a GaAs/Al[sub 0.36]Ga[sub 0.64]As Superlattice at Temperatures in the Region of 77 K.
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- Semiconductors, 2002, v. 36, n. 7, p. 808, doi. 10.1134/1.1493754
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- Article
GaAs in GaSb: Strained Nanostructures for Mid-Infrared Optoelectronics.
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- Semiconductors, 2002, v. 36, n. 7, p. 816
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- Article
Inhomogeneous Broadening of the Ground Electron Level in a Quantum Dot Array.
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- Semiconductors, 2002, v. 36, n. 7, p. 821, doi. 10.1134/1.1493756
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- Article
Optically Pumped “Immersion-Lens” Infrared Light Emitting Diodes Based on Narrow-Gap III–V Semiconductors.
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- Semiconductors, 2002, v. 36, n. 7, p. 828, doi. 10.1134/1.1493757
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- Article
Amorphization of the Surface Region in Epitaxial n-GaAs Treated with Atomic Hydrogen.
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- Semiconductors, 2002, v. 36, n. 7, p. 832, doi. 10.1134/1.1493758
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- Article