Works matching IS 1063-7826 AND VI 35 AND IP 6 AND DT 2001

Results: 27

Current Instability in a-Si:H Solar Cells after Their Exposure to Light.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 674, doi. 10.1134/1.1379401

By:

Voronkov, É. N.

Publication type:

Article

The Relation between Recombination at Interface States and the Anomalously Small Exponent of the Current–Illuminance Characteristic in Microcrystalline Silicon.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 615, doi. 10.1134/1.1379389

By:

Koughia, K. V.;
Terukov, E. I.

Publication type:

Article

Effect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 621, doi. 10.1134/1.1379390

By:

Lysenko, V. S.;
Tyagulskiı, I. P.;
Osiyuk, I. N.;
Nazarov, A. N.;
Vovk, Ya. N.;
Gomenyuk, Yu. V.;
Terukov, E. I.;
Kon’kov, O. I.

Publication type:

Article

II International Conference on Amorphous and Microcrystalline Semiconductors.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 613, doi. 10.1134/1.1379388

By:

Terukov, Evgeni&icaron;

Publication type:

Article

EXAFS Studies of the Local Atomic Structure of Nanocrystalline GaAs.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 627, doi. 10.1134/1.1379391

By:

Valeev, R. G.;
Deev, A. N.;
Rutz, Yu. V.;
Babanov, Yu. A.;
Krylov, P. N.;
Kobziev, V. F.;
Lomaeva, S. F.

Publication type:

Article

High-Temperature Superconductivity in Chalcogenide Vitreous Semiconductors.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 677

By:

Prikhod’ko, A. V.;
Tséndin, K. D.;
Popov, B. P.

Publication type:

Article

Physical Properties of Si[sub 20]Te[sub 80] Glasses with Various Structures and Their Use in Acoustooptic Devices.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 630, doi. 10.1134/1.1379392

By:

Kulakova, L. A.;
Melekh, B. T.;
Yakhkind, É. Z.;
Kartenko, N. F.;
Bakharev, V. I.;
Yakovlev, Yu. P.

Publication type:

Article

Levels of Structural Modification of Noncrystalline Semiconductors and Limits of Their Applicability.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 637, doi. 10.1134/1.1379393

By:

Popov, A. I.;
Vorontsov, V. A.;
Popov, I. A.

Publication type:

Article

The Effect of Some Organic Addenda on the HOMO–LUMO Gap in C[sub 60] Fullerene.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 643, doi. 10.1134/1.1379394

By:

Sykmanov, D. A.;
Biryulin, Yu. F.;
Vinogradova, L. V.;
Zgonnik, V. N.

Publication type:

Article

Cooperative Generation of Coherent Phonons by Localized Excitations in Glasses.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 648, doi. 10.1134/1.1379395

By:

Andriesh, A. M.;
Yenaki, N. A.;
Korol, V. I.;
Bardetskiı, P. I.;
Kulyak, I. P.

Publication type:

Article

Influence of a-Si:H Band Tails on the Occupation of Dangling-Bond States and on Photoconductivity.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 656, doi. 10.1134/1.1379396

By:

Kuznetsov, S. V.;
Terukov, E. I.

Publication type:

Article

X-ray Studies of Nanoporous Carbon Powders Produced from Silicon Carbide.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 661, doi. 10.1134/1.1379398

By:

Smorgonskaya, É. A.;
Kyutt, R. N.;
Shchukarev, A. V.;
Gordeev, S. K.;
Grechinskaya, A. V.

Publication type:

Article

The Meissner Effect in Copper-Containing Fullerides.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 659

By:

Prikhod’ko, A. V.;
Kon’kov, O. I.

Publication type:

Article

Low-Temperature Plasma-Enhanced Chemical Vapor Deposition of Carbon Films and Their Emission Properties.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 669, doi. 10.1134/1.1379400

By:

Vinogradov, A. Ya.;
Andronov, A. N.;
Kosarev, A. I.;
Abramov, A. S.

Publication type:

Article

Effective Control over the Photoelectric Properties of Triphenylamine-containing Polyimides.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 666, doi. 10.1134/1.1379399

By:

Kazakova, L. P.;
Aleksandrova, E. L.;
Chernyshev, A. V.

Publication type:

Article

Changes in the Optical-Absorption Spectra of Transmutation-Doped GaAs as a Result of Annealing.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 708

By:

Brudnyı, V. N.;
Kolin, N. G.;
Merkurisov, D. I.;
Novikov, V. A.

Publication type:

Article

Photonic Crystals with Tunable Band Gap Based on Filled and Inverted Opal–Silicon Composites.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 680, doi. 10.1134/1.1379403

By:

Golubev, V. G.;
Kosobukin, V. A.;
Kurdyukov, D. A.;
Medvedev, A. V.;
Pevtsov, A. B.

Publication type:

Article

Self-Organization Processes and Optical Activation of the Er[sup 3+] Ions in Amorphous Hydrogenated Er-Doped Silicon Films.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 684, doi. 10.1134/1.1379404

By:

Mezdrogina, M. M.;
Mosina, G. N.;
Terukov, E. I.;
Trapeznikova, I. N.

Publication type:

Article

Polycrystalline Films of Gallium Nitride Grown by Magnetron Sputtering.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 688, doi. 10.1134/1.1379405

By:

Blaut-Blachev, A. N.

Publication type:

Article

An Analysis of the Temperature Dependence of the Electron Mobility in the CdGeAs[sub 2] Single Crystals.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 690, doi. 10.1134/1.1379406

By:

Borisenko, S. I.;
Rud’, V. Yu.;
Rud’, Yu. V.;
Tyuterev, V. G.

Publication type:

Article

Fine Structure of the Edge Ultraviolet Luminescence of GaN:Mg Films Activated in a Nitrogen Plasma and the Electroluminescence of a ZnO–GaN:Mg Heterostructure Based on These Films.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 695, doi. 10.1134/1.1379407

By:

Georgobiani, A. N.;
Gruzintsev, A. N.;
Vorob’ev, M. O.;
Kaiser, U.;
Richter, W.;
Khodos, I. I.

Publication type:

Article

Temperature Dependence of Plasma-Reflection Spectra of Bismuth–Antimony Crystals.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 703, doi. 10.1134/1.1379409

By:

Grabov, V. M.;
Stepanov, N. P.

Publication type:

Article

Bi Impurity in PbSe.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 700, doi. 10.1134/1.1379408

By:

Nemov, S. A.;
Osipov, P. A.

Publication type:

Article

CdTe Polycrystalline Surface Subjected to Pulsed Laser Irradiation.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 714

By:

Baıdullaeva, A.;
Vlasenko, A. I.;
Mozol’, P. E.;
Smirnov, A. B.

Publication type:

Article

A Noncontact Electron-Probe Method for Measuring the Diffusion Length and the Lifetime of Minority Charge Carriers in Semiconductors.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 718, doi. 10.1134/1.1379412

By:

Rau, É. I.;
Zhu, Shiqiu

Publication type:

Article

Manifestations of Quantum Confinement in Semiconductor Structures with Wide Doped Wells.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 723, doi. 10.1134/1.1379413

By:

Sherstobitov, A. A.;
Min’kov, G. M.

Publication type:

Article

Momentum Alignment and Spin Orientation of Photoexcited Electrons in GaAs in the Transition from Two- to Three-Dimensional Structures.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 727, doi. 10.1134/1.1379414

By:

Akimov, I. A.;
Mirlin, D. N.;
Perel’, V. I.;
Sapega, V. F.

Publication type:

Article