A Nonlinear Theory of Coherent Oscillations in a Resonance-Tunnel Diode in a Wide Frequency Range.
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- Semiconductors, 2000, v. 34, n. 11, p. 1321, doi. 10.1134/1.1325431
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Works in Semiconductors, 2000, Vol 34, Issue 11
Results: 23
1
2
A Coherent Laser Based on a Two-Well Structure.
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- Semiconductors, 2000, v. 34, n. 11, p. 1351, doi. 10.1134/1.1325438
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3
Silicon–Germanium Nanostructures with Quantum Dots: Formation Mechanisms and Electrical Properties.
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- Semiconductors, 2000, v. 34, n. 11, p. 1229, doi. 10.1134/1.1325416
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- Article
4
Internal Microstrain and Distribution of Composition and Cathodoluminescence over Lapped Al[sub x]Ga[sub 1 – ][sub x]N Epilayers on Sapphire.
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- Semiconductors, 2000, v. 34, n. 11, p. 1248, doi. 10.1134/1.1325417
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- Article
5
Influence of Heat Treatment on Luminescence of Semi-Insulating Undoped GaAs Crystals.
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- Semiconductors, 2000, v. 34, n. 11, p. 1259, doi. 10.1134/1.1325419
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6
Epitaxial Deposition of InGaAsP Solid Solutions in the Miscibility Gap.
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- Semiconductors, 2000, v. 34, n. 11, p. 1255, doi. 10.1134/1.1325418
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- Article
7
Basic Principles of Postgrowth Annealing of CdTe:Cl Ingot to Obtain Semi-Insulating Crystals.
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- Semiconductors, 2000, v. 34, n. 11, p. 1264, doi. 10.1134/1.1325420
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8
A Quasi-Linear Photorefractive Effect in Silicon.
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- Semiconductors, 2000, v. 34, n. 11, p. 1270, doi. 10.1134/1.1325421
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9
Quasi-localized States and Resonance Scattering of Particles by Defects in Semiconductor Crystals with Band Spectrum Structure.
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- Semiconductors, 2000, v. 34, n. 11, p. 1281, doi. 10.1134/1.1325423
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- Article
10
Fabrication and Photoelectronic Properties of ZnTe Single Crystals and Schottky Diodes.
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- Semiconductors, 2000, v. 34, n. 11, p. 1275, doi. 10.1134/1.1325422
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- Article
11
Magneto-Optical Study of Bismuth at 80–280 K.
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- Semiconductors, 2000, v. 34, n. 11, p. 1287, doi. 10.1134/1.1325424
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- Article
12
Stimulation of Luminescence in Graded-Gap Al[sub x]Ga[sub 1 – ][sub x]As Semiconductors.
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- Semiconductors, 2000, v. 34, n. 11, p. 1290
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13
Nanorelief of a GaN Surface: the Effect of Sulfide Treatment.
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- Semiconductors, 2000, v. 34, n. 11, p. 1301, doi. 10.1134/1.1325427
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14
Photoelectric Properties of Isotype and Anisotype Si/GaN:O Heterojunctions.
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- Semiconductors, 2000, v. 34, n. 11, p. 1295, doi. 10.1134/1.1325426
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- Article
15
The Dislocation Origin and Model of Excess Tunnel Current in GaP p–n Structures.
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- Semiconductors, 2000, v. 34, n. 11, p. 1305, doi. 10.1134/1.1325428
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- Article
16
Photoresistance of Si/Ge/Si Structures with Germanium Quantum Dots.
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- Semiconductors, 2000, v. 34, n. 11, p. 1311, doi. 10.1134/1.1325429
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- Article
17
Optical-Absorption Spectra of PbS/C-Based Fibonacci Superlattices with Phonon-Assisted Transitions.
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- Semiconductors, 2000, v. 34, n. 11, p. 1327, doi. 10.1134/1.1325432
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18
The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3–1.4μm.
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- Semiconductors, 2000, v. 34, n. 11, p. 1316, doi. 10.1134/1.1325430
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- Article
19
Electrical Properties of Hydrogenated Amorphous Ge[sub 0.90]Si[sub 0.1]:H[sub x] Films.
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- Semiconductors, 2000, v. 34, n. 11, p. 1330, doi. 10.1134/1.1325433
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- Article
20
Photoresponse and Electroluminescence of Silicon–<PorousSilicon>–<Chemically Deposited Metal> Structures.
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- Semiconductors, 2000, v. 34, n. 11, p. 1334, doi. 10.1134/1.1325434
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- Article
21
The Power Density Giving Rise to Optical Degradation of Mirrors in InGaAs/AlGaAs/GaAs-Based Laser Diodes.
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- Semiconductors, 2000, v. 34, n. 11, p. 1341, doi. 10.1134/1.1325436
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- Article
22
Laser Waveguide with a Reverse Gradient of the Refractive Index.
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- Semiconductors, 2000, v. 34, n. 11, p. 1338, doi. 10.1134/1.1325435
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- Article
23
InAsSb/InAsSbP Double-Heterostructure Lasers Emitting at 3–4μm: Part I.
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- Semiconductors, 2000, v. 34, n. 11, p. 1343, doi. 10.1134/1.1325437
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- Article