Works in Semiconductors, 1999, Vol 33, Issue 10
Results: 24
Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment.
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- Semiconductors, 1999, v. 33, n. 10, p. 1049, doi. 10.1134/1.1187862
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Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic.
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- Semiconductors, 1999, v. 33, n. 10, p. 1054, doi. 10.1134/1.1187863
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Detection of paramagnetic recombination centers in proton-irradiated silicon.
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- Semiconductors, 1999, v. 33, n. 10, p. 1059, doi. 10.1134/1.1187864
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Luminescence properties of InAs layers and p-n structures grown by metallorganic chemical vapor deposition.
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- Semiconductors, 1999, v. 33, n. 10, p. 1062, doi. 10.1134/1.1187865
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Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy.
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- Semiconductors, 1999, v. 33, n. 10, p. 1067, doi. 10.1134/1.1187866
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The energy spectrum of lead selenide implanted with oxygen.
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- Semiconductors, 1999, v. 33, n. 10, p. 1072, doi. 10.1134/1.1187867
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- Article
Autosolitons in an electron–hole plasma/excitons system in silicon at 4.2 K.
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- Semiconductors, 1999, v. 33, n. 10, p. 1076, doi. 10.1134/1.1187868
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Influence of indium doping on the formation of silicon–(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures.
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- Semiconductors, 1999, v. 33, n. 10, p. 1080, doi. 10.1134/1.1187869
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Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium.
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- Semiconductors, 1999, v. 33, n. 10, p. 1084, doi. 10.1134/1.1187870
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Photoconversion in heterocontacts of CdTe and its analogs with protein.
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- Semiconductors, 1999, v. 33, n. 10, p. 1093
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Electronic properties of a GaAs surface treated with hydrochloric acid.
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- Semiconductors, 1999, v. 33, n. 10, p. 1088, doi. 10.1134/1.1187871
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Determination of the electron mobility and density in thin semiconductor films at microwave frequencies using the magnetoplasma resonance.
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- Semiconductors, 1999, v. 33, n. 10, p. 1115, doi. 10.1134/1.1187877
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Fabrication and photosensitivity of AgInSe[sub 2]/III–VI isotypic heterojunctions.
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- Semiconductors, 1999, v. 33, n. 10, p. 1097
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- Article
Influence of atomic-hydrogen treatment on the surface properties of n–n[sup +] GaAs structures.
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- Semiconductors, 1999, v. 33, n. 10, p. 1100, doi. 10.1134/1.1187874
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Production and properties of In/HgGa[sub 2]S[sub 4] Schottky barriers.
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- Semiconductors, 1999, v. 33, n. 10, p. 1108
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Modeling of the electron distribution in AlGaAs/GaAs (δ-Si) structures grown on vicinal surfaces.
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- Semiconductors, 1999, v. 33, n. 10, p. 1119, doi. 10.1134/1.1187878
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Effect of the configuration of a quantum wire on the electron–phonon interaction.
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- Semiconductors, 1999, v. 33, n. 10, p. 1121, doi. 10.1134/1.1187879
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Effect of hydrogen on the current–voltage characteristics of Pd/p-InGaAsP and Pd/n-InGaAs barrier structures.
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- Semiconductors, 1999, v. 33, n. 10, p. 1111, doi. 10.1134/1.1187876
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Inelastic scattering of hot electrons by neutral donors in heavily silicon-doped GaAs/AlAs quantum wells.
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- Semiconductors, 1999, v. 33, n. 10, p. 1124, doi. 10.1134/1.1187880
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Momentum relaxation time and temperature dependence of electron mobility in semiconductor superlattices consisting of weakly interacting quantum wells.
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- Semiconductors, 1999, v. 33, n. 10, p. 1128, doi. 10.1134/1.1187881
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Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method.
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- Semiconductors, 1999, v. 33, n. 10, p. 1133, doi. 10.1134/1.1187882
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Role of impurities in the formation of silicyne (long-chain silicon): theory and experiment.
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- Semiconductors, 1999, v. 33, n. 10, p. 1139, doi. 10.1134/1.1187883
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Variation of the parameters and composition of thin films of porous silicon as a result of oxidation: ellipsometric studies.
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- Semiconductors, 1999, v. 33, n. 10, p. 1149, doi. 10.1134/1.1187885
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Formation of optically active centers in films of erbium-doped amorphous hydrated silicon.
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- Semiconductors, 1999, v. 33, n. 10, p. 1145, doi. 10.1134/1.1187884
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