Found: 27
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Pulsed investigations of diode structures based on silicon-hydrogen films
- Published in:
- Semiconductors, 1998, v. 32, n. 7, p. 792, doi. 10.1134/1.1187508
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- Article
Use of direct wafer bonding of silicon for fabricating solar cell structures with vertical p-n junctions
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- Semiconductors, 1998, v. 32, n. 7, p. 789, doi. 10.1134/1.1187507
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- Article
Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 um
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- Semiconductors, 1998, v. 32, n. 7, p. 795, doi. 10.1134/1.1187509
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- Article
Temperature dependence of the reverse current in Schottky barrier diodes
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- Semiconductors, 1998, v. 32, n. 7, p. 785, doi. 10.1134/1.1187506
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- Article
Effect of deposition and annealing conditions on the optical properties of amorphous silicon
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- Semiconductors, 1998, v. 32, n. 7, p. 782, doi. 10.1134/1.1187505
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- Article
Defects and short- and medium-range order in the structural network of hydrogenated amorphous silicon
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- Semiconductors, 1998, v. 32, n. 7, p. 779, doi. 10.1134/1.1187504
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- Article
Scattering of hot electrons by neutral acceptors in GaAs/AIAs quantum well structures
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- Semiconductors, 1998, v. 32, n. 7, p. 770, doi. 10.1134/1.1187503
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- Article
Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction
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- Semiconductors, 1998, v. 32, n. 7, p. 765, doi. 10.1134/1.1187502
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- Article
Light absorption in aperiodic PbS/C superlattices in an electric field
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- Semiconductors, 1998, v. 32, n. 7, p. 762, doi. 10.1134/1.1187501
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- Article
Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AIGaAs quantum wells
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- Semiconductors, 1998, v. 32, n. 7, p. 757
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- Article
Modulation of optical absorption of GaAs/AIGaAs quantum wells in a transverse electric field
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- Semiconductors, 1998, v. 32, n. 7, p. 754
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- Article
Theoretical study of the threshold characteristics of InGaN multiquantum well lasers
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- Semiconductors, 1998, v. 32, n. 7, p. 749, doi. 10.1134/1.1187498
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- Article
Donor-acceptor recombination in short-period silicon-doped GaAs/AlAs superlattices
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- Semiconductors, 1998, v. 32, n. 7, p. 745, doi. 10.1134/1.1187497
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- Article
Allowing for current spreading in semiconductors during measurements of the contact resistivity of ohmic contacts
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- Semiconductors, 1998, v. 32, n. 7, p. 739, doi. 10.1134/1.1187496
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- Article
Photovoltaic effect in In/I-IIl-V12-thin-film surface-barrier structures
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- Semiconductors, 1998, v. 32, n. 7, p. 736
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- Article
Preparation and properties of GeS2 single crystals
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- Semiconductors, 1998, v. 32, n. 7, p. 734, doi. 10.1134/1.1187494
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- Article
Computer-simulation investigation of nonlinear transport dynamics in a compensated semiconductor during low-temperature electric breakdown
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- Semiconductors, 1998, v. 32, n. 7, p. 729, doi. 10.1134/1.1187493
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- Article
Contribution of light holes to the Hall effect for the complex valence band in germanium and its dependence on doping level
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- Semiconductors, 1998, v. 32, n. 7, p. 720, doi. 10.1134/1.1187492
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- Article
Donorlike behavior of rare-earth impurities in PbTe
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- Semiconductors, 1998, v. 32, n. 7, p. 716, doi. 10.1134/1.1187491
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- Article
Effect of metal impurities on the drift mobility of charge carriers in glassy chalcogenide semiconductors
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- Semiconductors, 1998, v. 32, n. 7, p. 714, doi. 10.1134/1.1187490
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- Article
Calculation of the energy levels of shallow acceptors in unlaxially strained germanium
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- Semiconductors, 1998, v. 32, n. 7, p. 711, doi. 10.1134/1.1187489
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- Article
Properties of manganese-doped gallium arsenide layers grown by liquid phase epitaxy from a bismuth melt
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- Semiconductors, 1998, v. 32, n. 7, p. 704, doi. 10.1134/1.1187488
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- Article
Phase states and magnetic structure of superconducting lead inclusions in a narrow-gap PbTe semiconducting host
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- Semiconductors, 1998, v. 32, n. 7, p. 700, doi. 10.1134/1.1187487
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- Article
Stabilization of the physical properties of Cdx,Hg1-xSe solid solutions doped with iron
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- Semiconductors, 1998, v. 32, n. 7, p. 696, doi. 10.1134/1.1187486
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- Article
Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures
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- Semiconductors, 1998, v. 32, n. 7, p. 692, doi. 10.1134/1.1187485
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- Article
Features of the electrical compensation of bismuth impurities in PbSe
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- Semiconductors, 1998, v. 32, n. 7, p. 689, doi. 10.1134/1.1187484
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- Article
Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C.
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- Semiconductors, 1998, v. 32, n. 7, p. 683, doi. 10.1134/1.1187483
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- Article