Works in Semiconductors, 1998, Vol 32, Issue 6
Results: 26
Subthreshold characteristics of electrostatically controlled transistors and thyristors III. Buried gate
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- Semiconductors, 1998, v. 32, n. 6, p. 677, doi. 10.1134/1.1187464
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On the temperature and field dependences of the effective surface mobility in MIS structures
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- Semiconductors, 1998, v. 32, n. 6, p. 673
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Degradation of MOS tunnel structures at high current density
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- Semiconductors, 1998, v. 32, n. 6, p. 668, doi. 10.1134/1.1187462
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Electron-phonon interaction and electron mobility in quantum-well type-II PbTe/PbS structures
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- Semiconductors, 1998, v. 32, n. 6, p. 665, doi. 10.1134/1.1187461
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Deep states in silicon &-doped GaAs
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- Semiconductors, 1998, v. 32, n. 6, p. 659, doi. 10.1134/1.1187460
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Elimination of the electron-phonon interaction in superlattices in a quantizing magnetic field
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- Semiconductors, 1998, v. 32, n. 6, p. 657, doi. 10.1134/1.1187459
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The quantum Hall effect in a wide p-Ge1_xSix/Ge/p-Ge1_xSix potential well
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- Semiconductors, 1998, v. 32, n. 6, p. 749, doi. 10.1134/1.1187458
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Surface mobility and distribution of electrons in the accumulation layer of Ga2Se3/GaAs heterostructures
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- Semiconductors, 1998, v. 32, n. 6, p. 646, doi. 10.1134/1.1187457
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Induced photopleochroism of p-GaAIAs/p-n-GaAs structures
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- Semiconductors, 1998, v. 32, n. 6, p. 642, doi. 10.1134/1.1187456
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Oxygen precipitates and the formation of thermal donors in silicon
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- Semiconductors, 1998, v. 32, n. 6, p. 640, doi. 10.1134/1.1187455
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Erbium impurity atoms in silicon
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- Semiconductors, 1998, v. 32, n. 6, p. 636, doi. 10.1134/1.1187454
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Experimental manifestations of correlated hopping in the temperature dependences of the conductivity of doped CdTe
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- Semiconductors, 1998, v. 32, n. 6, p. 631, doi. 10.1134/1.1187453
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The effect of a strong electric field on the conductivity of a MnGalnS4: Eu single crystal
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- Semiconductors, 1998, v. 32, n. 6, p. 629, doi. 10.1134/1.1187452
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Autosolitons in InSb in a magnetic field
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- Semiconductors, 1998, v. 32, n. 6, p. 625, doi. 10.1134/1.1187605
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Charge-transfer theory in polycrystalline semiconductors with deep impurity centers
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- Semiconductors, 1998, v. 32, n. 6, p. 619, doi. 10.1134/1.1187451
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Analysis of capacitance-relaxation signals consisting of several exponentials
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- Semiconductors, 1998, v. 32, n. 6, p. 617, doi. 10.1134/1.1187450
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Infrared reflectance spectra and Raman spectra of CuxAg1_xGaS2 solid solutions
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- Semiconductors, 1998, v. 32, n. 6, p. 613
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Structure of DX-like centers in narrow-band IV-Vl semiconductors doped with group-III elements
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- Semiconductors, 1998, v. 32, n. 6, p. 608
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Defect-formation processes in silicon doped with manganese and germanium
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- Semiconductors, 1998, v. 32, n. 6, p. 606, doi. 10.1134/1.1187448
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The nature of manganese luminescence centers in zinc sulfide single crystals
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- Semiconductors, 1998, v. 32, n. 6, p. 603
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Identifying the parameters of impurity levels in high-resistance semiconductor crystals by means of thermally stimulated currents with dosed Illumination of the samples
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- Semiconductors, 1998, v. 32, n. 6, p. 599, doi. 10.1134/1.1187446
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Pressure-induced insulator-metal transition in electron-irradiated Pb1_xSnxSe (x <0.03) alloys
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- Semiconductors, 1998, v. 32, n. 6, p. 594, doi. 10.1134/1.1187445
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Self-organizing nanoheterostructures in InGaAsP solid solutions
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- Semiconductors, 1998, v. 32, n. 6, p. 590, doi. 10.1134/1.1187444
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Study of the surface structure of tin dioxide layers for gas sensors by atomic-force microscopy
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- Semiconductors, 1998, v. 32, n. 6, p. 587, doi. 10.1134/1.1187443
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One-dimensional structures formed by low-temperature slip of dislocations that act as sources of dislocation absorption and emission in II-Vl semiconductor crystals
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- Semiconductors, 1998, v. 32, n. 6, p. 580, doi. 10.1134/1.1187442
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The role of macrodefects in electronic and ionic processes in wide-band II-Vl semiconductors
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- Semiconductors, 1998, v. 32, n. 6, p. 575, doi. 10.1134/1.1187441
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