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Study of ZnCdSe/ZnSe quantum wells grown by molecular-beam epitaxy on ZnSe substrates.
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- Semiconductors, 1997, v. 31, n. 6, p. 545
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- Article
Mesoscopic effects in the hopping conductivity region of macroscopic quasi-two-dimensional systems.
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- Semiconductors, 1997, v. 31, n. 6, p. 551, doi. 10.1134/1.1187216
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- Article
Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures.
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- Semiconductors, 1997, v. 31, n. 6, p. 556, doi. 10.1134/1.1187217
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Radiative recombination on the interface in a p-GaInAsSb/p-InAs type-II (broken-gap) heterostructure upon pulsed excitation.
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- Semiconductors, 1997, v. 31, n. 6, p. 560, doi. 10.1134/1.1187218
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Influence of charge carriers on tuning in InAsSb lasers.
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- Semiconductors, 1997, v. 31, n. 6, p. 563, doi. 10.1134/1.1187215
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Depolarization and photoionization effects in quantum wells.
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- Semiconductors, 1997, v. 31, n. 6, p. 567, doi. 10.1134/1.1187219
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Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix.
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- Semiconductors, 1997, v. 31, n. 6, p. 571, doi. 10.1134/1.1187318
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- Article
Formation of carrier generation centers in pure Si upon interaction with fast ions.
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- Semiconductors, 1997, v. 31, n. 6, p. 575, doi. 10.1134/1.1187220
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Influence of hydrostatic pressure on the electron mobility and the correlation properties of a mixed-valence system of iron impurity ions in HgSe:Fe crystals.
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- Semiconductors, 1997, v. 31, n. 6, p. 580, doi. 10.1134/1.1187221
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Drift-induced production of concentration gratings in an electron-hole plasma in a high-frequency electric field.
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- Semiconductors, 1997, v. 31, n. 6, p. 585, doi. 10.1134/1.1187222
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Thermal-gradient concentration in a bipolar semiconductor with phonon drag of charge carriers.
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- Semiconductors, 1997, v. 31, n. 6, p. 590, doi. 10.1134/1.1187223
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Light-emitting diodes based on a metal-insulator-semiconductor structure.
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- Semiconductors, 1997, v. 31, n. 6, p. 593, doi. 10.1134/1.1187319
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- Article
Recombination model of the diffusion of zinc in GaAs.
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- Semiconductors, 1997, v. 31, n. 6, p. 595
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- Article
Kinetics of the redistribution of an impurity in quasiperiodic structures appearing in heavily boron-doped silicon irradiated by boron ions.
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- Semiconductors, 1997, v. 31, n. 6, p. 600, doi. 10.1134/1.1187225
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- Article
Influence of impurity germanium on the properties of sulfur centers in silicon.
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- Semiconductors, 1997, v. 31, n. 6, p. 605, doi. 10.1134/1.1187226
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Possibility of enhancing a photorefractive hologram using negative differential conductivity.
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- Semiconductors, 1997, v. 31, n. 6, p. 608, doi. 10.1134/1.1187317
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- Article
Dielectric constant and ac conductivity of semi-insulating Cd[sub 1-x]Mn[sub x]Te semiconductors.
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- Semiconductors, 1997, v. 31, n. 6, p. 610, doi. 10.1134/1.1187227
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- Article
Anomalous distribution of iron atoms following the simultaneous implantation of Co[sup +] and Fe[sup +] ions in silicon.
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- Semiconductors, 1997, v. 31, n. 6, p. 615, doi. 10.1134/1.1187237
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Features of radiation-induced defect formation in p-type Si<B,Pt>.
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- Semiconductors, 1997, v. 31, n. 6, p. 618, doi. 10.1134/1.1187228
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Schottky barrier breakdown in Si stimulated by exciton drift in a nonuniform electric field at 4.2 K.
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- Semiconductors, 1997, v. 31, n. 6, p. 620, doi. 10.1134/1.1187229
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- Article
Influence of ytterbium on radiation-induced defect formation in silicon.
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- Semiconductors, 1997, v. 31, n. 6, p. 624, doi. 10.1134/1.1187230
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Photoluminescence of SiO[sub 2] layers implanted with Si[sup +] ions and annealed in a pulsed regime.
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- Semiconductors, 1997, v. 31, n. 6, p. 626, doi. 10.1134/1.1187231
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Quantum efficiency of Schottky photodiodes near the long-wavelength edge.
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- Semiconductors, 1997, v. 31, n. 6, p. 631, doi. 10.1134/1.1187232
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The photoconductivity of Cd[sub x]Hg[sub 1-x]Te (x=0.2-0.3) with an aluminum thin-film coating.
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- Semiconductors, 1997, v. 31, n. 6, p. 635, doi. 10.1134/1.1187233
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Temperature dependence of the photoluminescence of porous silicon.
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- Semiconductors, 1997, v. 31, n. 6, p. 639, doi. 10.1134/1.1187234
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Use of a low-temperature emitter in investigating the spectral characteristics of infrared photodetectors.
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- Semiconductors, 1997, v. 31, n. 6, p. 642
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- Article
Laser-stimulated displacement of the p-n junction boundary in direct-gap GaAsP structures.
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- Semiconductors, 1997, v. 31, n. 6, p. 645, doi. 10.1134/1.1187235
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Capacitive Methods of Semiconductor Purity Control.
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- Semiconductors, 1997, v. 31, n. 6, p. 649, doi. 10.1134/1.1187236
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- Article