Works in Semiconductors, 1997, Vol 31, Issue 2
Results: 26
Electrothermal instabilities induced by a metastable electronic state in PbTe(Ga).
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- Semiconductors, 1997, v. 31, n. 2, p. 100, doi. 10.1134/1.1187089
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Resonant interaction of electrons with a high frequency electric field in two-barrier structures.
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- Semiconductors, 1997, v. 31, n. 2, p. 103, doi. 10.1134/1.1187090
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Transport of hydrogen in films of graphite, amorphous silicon, and nickel oxide.
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- Semiconductors, 1997, v. 31, n. 2, p. 110, doi. 10.1134/1.1187091
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Tunnel excess current in nondegenerate barrier (p–n and m–s) silicon-containing III–V structures.
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- Semiconductors, 1997, v. 31, n. 2, p. 115, doi. 10.1134/1.1187092
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Photosensitivity of porous silicon-silicon heterostructures.
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- Semiconductors, 1997, v. 31, n. 2, p. 121, doi. 10.1134/1.1187137
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Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C.
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- Semiconductors, 1997, v. 31, n. 2, p. 124, doi. 10.1134/1.1187093
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Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures.
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- Semiconductors, 1997, v. 31, n. 2, p. 127, doi. 10.1134/1.1187088
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Electron and hole spectra and selection rules for optical transitions in Ge[sub 1-x]Si[sub x]/Ge heterostructures.
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- Semiconductors, 1997, v. 31, n. 2, p. 132, doi. 10.1134/1.1187094
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Mechanical properties of pure and doped InP single crystals determined under local loading.
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- Semiconductors, 1997, v. 31, n. 2, p. 139, doi. 10.1134/1.1187095
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Unusual absorption “band” in the infrared spectrum of silicon annealed at high temperature and then rapidly cooled.
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- Semiconductors, 1997, v. 31, n. 2, p. 143, doi. 10.1134/1.1187096
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Numerical modeling of microplasma instability.
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- Semiconductors, 1997, v. 31, n. 2, p. 146, doi. 10.1134/1.1187097
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Oscillations of a ballistic hole current through uniaxially compressed semiconductor layers.
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- Semiconductors, 1997, v. 31, n. 2, p. 150, doi. 10.1134/1.1187098
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Trapping of hot electrons at repulsive centers under transverse runaway conditions.
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- Semiconductors, 1997, v. 31, n. 2, p. 161, doi. 10.1134/1.1187099
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Characteristic features of electron photoemission from the metal in SiC-based Schottky diodes.
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- Semiconductors, 1997, v. 31, n. 2, p. 164, doi. 10.1134/1.1187100
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Breakdown electroluminescence spectra of silicon carbide p–n junctions.
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- Semiconductors, 1997, v. 31, n. 2, p. 169, doi. 10.1134/1.1187101
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The dominant mechanisms of charge-carrier scattering in lead telluride.
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- Semiconductors, 1997, v. 31, n. 2, p. 173, doi. 10.1134/1.1187322
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Formation of order in a system of localized charges in disordered layers of solid solutions of cadmium telluride and cadmium sulfide.
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- Semiconductors, 1997, v. 31, n. 2, p. 177, doi. 10.1134/1.1187102
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Two-electron tin centers with negative correlation energy in lead chalcogenides. Determination of the Hubbard energy.
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- Semiconductors, 1997, v. 31, n. 2, p. 181, doi. 10.1134/1.1187103
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Effect of thermal annealing on the luminescence properties of ZnCdSe/ZnSe quantum-well structures.
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- Semiconductors, 1997, v. 31, n. 2, p. 186, doi. 10.1134/1.1187104
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Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing.
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- Semiconductors, 1997, v. 31, n. 2, p. 189, doi. 10.1134/1.1187105
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Photosensitivity of InP/CdS heterostructures in linearly polarized light.
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- Semiconductors, 1997, v. 31, n. 2, p. 194, doi. 10.1134/1.1187106
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Photoelectric properties of porous and single-crystal silicon heterocontacts.
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- Semiconductors, 1997, v. 31, n. 2, p. 197
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Photoluminescence of anodized layers of CdSiAs[sub 2].
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- Semiconductors, 1997, v. 31, n. 2, p. 200, doi. 10.1134/1.1187108
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Photoluminescence of anodized silicon carbide.
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- Semiconductors, 1997, v. 31, n. 2, p. 202, doi. 10.1134/1.1187109
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Semiconductors-97: Third Russian Conference on Semiconductor Physics.
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- Semiconductors, 1997, v. 31, n. 2, p. 204, doi. 10.1134/1.1187110
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- Article
Photovoltaic effect in a p-type CuInSe[sub 2]/green leaf heterojunction.
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- Semiconductors, 1997, v. 31, n. 2, p. 97
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- Article