Works matching IS 10627995 AND DT 2020 AND VI 28 AND IP 4

Results: 11

Cover Image.

Published in:

Progress in Photovoltaics, 2020, v. 28, n. 4, p. i, doi. 10.1002/pip.3267

By:

Hong, Jianyu;
Wang, Youyang;
Chen, Yuanjing;
Hu, Xiaobo;
Weng, Guoen;
Chen, Shaoqiang;
Akiyama, Hidefumi;
Zhang, Yingbin;
Zhang, Bo;
Chu, Junhao

Publication type:

Article

Photovoltaic literature survey (no. 158).

Published in:

Progress in Photovoltaics, 2020, v. 28, n. 4, p. 342, doi. 10.1002/pip.3266

By:

Hameiri, Ziv

Publication type:

Article

Band gap engineered ternary semiconductor PbxCd1−xS: Nanoparticle‐sensitized solar cells with an efficiency of 8.5% under 1% sun—A combined theoretical and experimental study.

Published in:

Progress in Photovoltaics, 2020, v. 28, n. 4, p. 328, doi. 10.1002/pip.3245

By:

Boon‐on, Patsorn;
Lien, Shang‐Wei;
Chang, Tay‐Rong;
Shi, Jen‐Bin;
Lee, Ming‐Way

Publication type:

Article

Transparent silicon carbide/tunnel SiO2 passivation for c‐Si solar cell front side: Enabling Jsc > 42 mA/cm2 and iVoc of 742 mV.

Published in:

Progress in Photovoltaics, 2020, v. 28, n. 4, p. 321, doi. 10.1002/pip.3244

By:

Pomaska, Manuel;
Köhler, Malte;
Procel Moya, Paul;
Zamchiy, Alexandr;
Singh, Aryak;
Kim, Do Yun;
Isabella, Olindo;
Zeman, Miro;
Li, Shenghao;
Qiu, Kaifu;
Eberst, Alexander;
Smirnov, Vladimir;
Finger, Friedhelm;
Rau, Uwe;
Ding, Kaining

Publication type:

Article

Silicon heterojunction solar cells toward higher fill factor.

Published in:

Progress in Photovoltaics, 2020, v. 28, n. 4, p. 307, doi. 10.1002/pip.3241

By:

Martini, Luca;
Serenelli, Luca;
Menchini, Francesca;
Izzi, Massimo;
Tucci, Mario

Publication type:

Article

Absolute electroluminescence imaging with distributed circuit modeling: Excellent for solar‐cell defect diagnosis.

Published in:

Progress in Photovoltaics, 2020, v. 28, n. 4, p. 295, doi. 10.1002/pip.3236

By:

Hong, Jianyu;
Wang, Youyang;
Chen, Yuanjing;
Hu, Xiaobo;
Weng, Guoen;
Chen, Shaoqiang;
Akiyama, Hidefumi;
Zhang, Yingbin;
Zhang, Bo;
Chu, Junhao

Publication type:

Article

A new theoretical approach for the performance simulation of multijunction solar cells.

Published in:

Progress in Photovoltaics, 2020, v. 28, n. 4, p. 279, doi. 10.1002/pip.3225

By:

Timò, Gianluca;
Martinelli, Alessio;
Andreani, Lucio Claudio

Publication type:

Article

Electron radiation–induced degradation of GaAs solar cells with different architectures.

Published in:

Progress in Photovoltaics, 2020, v. 28, n. 4, p. 266, doi. 10.1002/pip.3224

By:

Gruginskie, Natasha;
Cappelluti, Federica;
Bauhuis, Gerard J.;
Mulder, Peter;
Haverkamp, Erik J.;
Vlieg, Elias;
Schermer, John J.

Publication type:

Article

Modeling and design for low‐cost multijunction solar cell via light‐trapping rear texture technique: Applied in InGaP/GaAs/InGaAs triple junction.

Published in:

Progress in Photovoltaics, 2020, v. 28, n. 4, p. 251, doi. 10.1002/pip.3217

By:

Zhu, Lin;
Hazama, Yuji;
Reddy, Anurag;
Watanabe, Kentaroh;
Nakano, Yoshiaki;
Sugiyama, Masakazu;
Akiyama, Hidefumi

Publication type:

Article

Issue Information.

Published in:: Progress in Photovoltaics, 2020, v. 28, n. 4, p. 235, doi. 10.1002/pip.3159
Publication type:: Article

Wide‐gap (Ag,Cu)(In,Ga)Se2 solar cells with different buffer materials—A path to a better heterojunction.

Published in:

Progress in Photovoltaics, 2020, v. 28, n. 4, p. 237, doi. 10.1002/pip.3232

By:

Keller, Jan;
Sopiha, Kostiantyn V.;
Stolt, Olof;
Stolt, Lars;
Persson, Clas;
Scragg, Jonathan J.S.;
Törndahl, Tobias;
Edoff, Marika

Publication type:

Article

Works matching IS 10627995 AND DT 2020 AND VI 28 AND IP 4

Cover Image.

Photovoltaic literature survey (no. 158).

Band gap engineered ternary semiconductor Pb<sub>x</sub>Cd<sub>1−x</sub>S: Nanoparticle‐sensitized solar cells with an efficiency of 8.5% under 1% sun—A combined theoretical and experimental study.

Transparent silicon carbide/tunnel SiO<sub>2</sub> passivation for c‐Si solar cell front side: Enabling J<sub>sc</sub> > 42 mA/cm<sup>2</sup> and iV<sub>oc</sub> of 742 mV.

Silicon heterojunction solar cells toward higher fill factor.

Absolute electroluminescence imaging with distributed circuit modeling: Excellent for solar‐cell defect diagnosis.

A new theoretical approach for the performance simulation of multijunction solar cells.

Electron radiation–induced degradation of GaAs solar cells with different architectures.

Modeling and design for low‐cost multijunction solar cell via light‐trapping rear texture technique: Applied in InGaP/GaAs/InGaAs triple junction.

Issue Information.

Wide‐gap (Ag,Cu)(In,Ga)Se<sub>2</sub> solar cells with different buffer materials—A path to a better heterojunction.