Works matching IS 10627995 AND DT 2020 AND VI 28 AND IP 4

Results: 11

Cover Image.
Published in:
Progress in Photovoltaics, 2020, v. 28, n. 4, p. i, doi. 10.1002/pip.3267
By:
- Hong, Jianyu;
- Wang, Youyang;
- Chen, Yuanjing;
- Hu, Xiaobo;
- Weng, Guoen;
- Chen, Shaoqiang;
- Akiyama, Hidefumi;
- Zhang, Yingbin;
- Zhang, Bo;
- Chu, Junhao
Publication type:
Article
Photovoltaic literature survey (no. 158).
Published in:
Progress in Photovoltaics, 2020, v. 28, n. 4, p. 342, doi. 10.1002/pip.3266
By:
- Hameiri, Ziv
Publication type:
Article
Electron radiation–induced degradation of GaAs solar cells with different architectures.
Published in:
Progress in Photovoltaics, 2020, v. 28, n. 4, p. 266, doi. 10.1002/pip.3224
By:
- Gruginskie, Natasha;
- Cappelluti, Federica;
- Bauhuis, Gerard J.;
- Mulder, Peter;
- Haverkamp, Erik J.;
- Vlieg, Elias;
- Schermer, John J.
Publication type:
Article
Band gap engineered ternary semiconductor PbxCd1−xS: Nanoparticle‐sensitized solar cells with an efficiency of 8.5% under 1% sun—A combined theoretical and experimental study.
Published in:
Progress in Photovoltaics, 2020, v. 28, n. 4, p. 328, doi. 10.1002/pip.3245
By:
- Boon‐on, Patsorn;
- Lien, Shang‐Wei;
- Chang, Tay‐Rong;
- Shi, Jen‐Bin;
- Lee, Ming‐Way
Publication type:
Article
Silicon heterojunction solar cells toward higher fill factor.
Published in:
Progress in Photovoltaics, 2020, v. 28, n. 4, p. 307, doi. 10.1002/pip.3241
By:
- Martini, Luca;
- Serenelli, Luca;
- Menchini, Francesca;
- Izzi, Massimo;
- Tucci, Mario
Publication type:
Article
Absolute electroluminescence imaging with distributed circuit modeling: Excellent for solar‐cell defect diagnosis.
Published in:
Progress in Photovoltaics, 2020, v. 28, n. 4, p. 295, doi. 10.1002/pip.3236
By:
- Hong, Jianyu;
- Wang, Youyang;
- Chen, Yuanjing;
- Hu, Xiaobo;
- Weng, Guoen;
- Chen, Shaoqiang;
- Akiyama, Hidefumi;
- Zhang, Yingbin;
- Zhang, Bo;
- Chu, Junhao
Publication type:
Article
Wide‐gap (Ag,Cu)(In,Ga)Se2 solar cells with different buffer materials—A path to a better heterojunction.
Published in:
Progress in Photovoltaics, 2020, v. 28, n. 4, p. 237, doi. 10.1002/pip.3232
By:
- Keller, Jan;
- Sopiha, Kostiantyn V.;
- Stolt, Olof;
- Stolt, Lars;
- Persson, Clas;
- Scragg, Jonathan J.S.;
- Törndahl, Tobias;
- Edoff, Marika
Publication type:
Article
A new theoretical approach for the performance simulation of multijunction solar cells.
Published in:
Progress in Photovoltaics, 2020, v. 28, n. 4, p. 279, doi. 10.1002/pip.3225
By:
- Timò, Gianluca;
- Martinelli, Alessio;
- Andreani, Lucio Claudio
Publication type:
Article
Transparent silicon carbide/tunnel SiO2 passivation for c‐Si solar cell front side: Enabling Jsc > 42 mA/cm2 and iVoc of 742 mV.
Published in:
Progress in Photovoltaics, 2020, v. 28, n. 4, p. 321, doi. 10.1002/pip.3244
By:
- Pomaska, Manuel;
- Köhler, Malte;
- Procel Moya, Paul;
- Zamchiy, Alexandr;
- Singh, Aryak;
- Kim, Do Yun;
- Isabella, Olindo;
- Zeman, Miro;
- Li, Shenghao;
- Qiu, Kaifu;
- Eberst, Alexander;
- Smirnov, Vladimir;
- Finger, Friedhelm;
- Rau, Uwe;
- Ding, Kaining
Publication type:
Article
Modeling and design for low‐cost multijunction solar cell via light‐trapping rear texture technique: Applied in InGaP/GaAs/InGaAs triple junction.
Published in:
Progress in Photovoltaics, 2020, v. 28, n. 4, p. 251, doi. 10.1002/pip.3217
By:
- Zhu, Lin;
- Hazama, Yuji;
- Reddy, Anurag;
- Watanabe, Kentaroh;
- Nakano, Yoshiaki;
- Sugiyama, Masakazu;
- Akiyama, Hidefumi
Publication type:
Article
Issue Information.
Published in:
Progress in Photovoltaics, 2020, v. 28, n. 4, p. 235, doi. 10.1002/pip.3159
Publication type:
Article

Works matching IS 10627995 AND DT 2020 AND VI 28 AND IP 4

Cover Image.

Photovoltaic literature survey (no. 158).

Electron radiation–induced degradation of GaAs solar cells with different architectures.

Band gap engineered ternary semiconductor Pb<sub>x</sub>Cd<sub>1−x</sub>S: Nanoparticle‐sensitized solar cells with an efficiency of 8.5% under 1% sun—A combined theoretical and experimental study.

Silicon heterojunction solar cells toward higher fill factor.

Absolute electroluminescence imaging with distributed circuit modeling: Excellent for solar‐cell defect diagnosis.

Wide‐gap (Ag,Cu)(In,Ga)Se<sub>2</sub> solar cells with different buffer materials—A path to a better heterojunction.

A new theoretical approach for the performance simulation of multijunction solar cells.

Transparent silicon carbide/tunnel SiO<sub>2</sub> passivation for c‐Si solar cell front side: Enabling J<sub>sc</sub> > 42 mA/cm<sup>2</sup> and iV<sub>oc</sub> of 742 mV.

Modeling and design for low‐cost multijunction solar cell via light‐trapping rear texture technique: Applied in InGaP/GaAs/InGaAs triple junction.

Issue Information.