Works matching IS 10627995 AND DT 2016 AND VI 24 AND IP 10

Results: 10

Issue Information.
Published in:
Progress in Photovoltaics, 2016, v. 24, n. 10, p. 1293, doi. 10.1002/pip.2687
Publication type:
Article
Impact of rain and soiling on potential induced degradation.
Published in:
Progress in Photovoltaics, 2016, v. 24, n. 10, p. 1304, doi. 10.1002/pip.2786
By:
- Koehl, Michael;
- Hoffmann, Stephan
Publication type:
Article
Assessing material qualities and efficiency limits of III-V on silicon solar cells using external radiative efficiency.
Published in:
Progress in Photovoltaics, 2016, v. 24, n. 10, p. 1310, doi. 10.1002/pip.2787
By:
- Lee, Kan‐Hua;
- Araki, Kenji;
- Wang, Li;
- Kojima, Nobuaki;
- Ohshita, Yoshio;
- Yamaguchi, Masafumi
Publication type:
Article
Comprehensive simulation study of industrially relevant silicon solar cell architectures for an optimal material parameter choice.
Published in:
Progress in Photovoltaics, 2016, v. 24, n. 10, p. 1319, doi. 10.1002/pip.2790
By:
- Steinkemper, Heiko;
- Hermle, Martin;
- Glunz, Stefan W.
Publication type:
Article
Changes of solar cell parameters during damp-heat exposure.
Published in:
Progress in Photovoltaics, 2016, v. 24, n. 10, p. 1346, doi. 10.1002/pip.2793
By:
- Zhu, Jiang;
- Koehl, Michael;
- Hoffmann, Stephan;
- Berger, Karl Anton;
- Zamini, Shokufeh;
- Bennett, Ian;
- Gerritsen, Eric;
- Malbranche, Philippe;
- Pugliatti, Paola;
- Di Stefano, Agnese;
- Aleo, Francesco;
- Bertani, Dario;
- Paletta, Fabrizio;
- Roca, Francesco;
- Graditi, Giorgio;
- Pellegrino, Michele;
- Zubillaga, Oihana;
- Iranzo, F. J. Cano;
- Pozza, Alberto;
- Sample, Tony
Publication type:
Article
Limiting factors on the semiconductor structure of III-V multijunction solar cells for ultra-high concentration (1000-5000 suns).
Published in:
Progress in Photovoltaics, 2016, v. 24, n. 10, p. 1332, doi. 10.1002/pip.2791
By:
- Ochoa, M.;
- Barrigón, E.;
- Barrutia, L.;
- García, I.;
- Rey‐Stolle, I.;
- Algora, C.
Publication type:
Article
Cu<sub>2</sub>ZnSnSe<sub>4</sub> solar cells with 10.6% efficiency through innovative absorber engineering with Ge superficial nanolayer.
Published in:
Progress in Photovoltaics, 2016, v. 24, n. 10, p. 1359, doi. 10.1002/pip.2797
By:
- Giraldo, Sergio;
- Thersleff, Thomas;
- Larramona, Gerardo;
- Neuschitzer, Markus;
- Pistor, Paul;
- Leifer, Klaus;
- Pérez‐Rodríguez, Alejandro;
- Moisan, Camille;
- Dennler, Gilles;
- Saucedo, Edgardo
Publication type:
Article
Integration of InGaP/GaAs/Ge triple-junction solar cells on deeply patterned silicon substrates.
Published in:
Progress in Photovoltaics, 2016, v. 24, n. 10, p. 1368, doi. 10.1002/pip.2798
By:
- Scaccabarozzi, Andrea;
- Binetti, Simona;
- Acciarri, Maurizio;
- Isella, Giovanni;
- Campesato, Roberta;
- Gori, Gabriele;
- Casale, Maria Cristina;
- Mancarella, Fulvio;
- Noack, Michael;
- Känel, Hans;
- Miglio, Leo
Publication type:
Article
Heterojunction solar cells with 23% efficiency on n-type epitaxial kerfless silicon wafers.
Published in:
2016
By:
- Kobayashi, Eiji;
- Watabe, Yoshimi;
- Hao, Ruiying;
- Ravi, T. S.
Publication type:
Other
Photovoltaics literature survey (no. 129).
Published in:
2016
By:
- Hameiri, Ziv
Publication type:
Other