Surface passivation of crystalline silicon solar cells: a review
- Published in:
- Progress in Photovoltaics, 2000, v. 8, n. 5, p. 473, doi. 10.1002/1099-159X(200009/10)8:5<473::AID-PIP337>3.0.CO;2-D
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- Article
Works matching IS 10627995 AND DT 2000 AND VI 8 AND IP 5
Results: 10
1
2
Silicon solar cells: at the crossroads
- Published in:
- Progress in Photovoltaics, 2000, v. 8, n. 5, p. 443, doi. 10.1002/1099-159X(200009/10)8:5<443::AID-PIP338>3.0.CO;2-D
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- Article
3
Rapid thermal processing of next generation silicon solar cells
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- Progress in Photovoltaics, 2000, v. 8, n. 5, p. 515, doi. 10.1002/1099-159X(200009/10)8:5<515::AID-PIP351>3.0.CO;2-Q
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- Article
4
Perspectives of crystalline Si thin film solar cells: a new era of thin monocrystalline Si films?
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- Progress in Photovoltaics, 2000, v. 8, n. 5, p. 451, doi. 10.1002/1099-159X(200009/10)8:5<451::AID-PIP335>3.0.CO;2-R
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- Article
5
Performance degradation in CZ(B) cells and improved stability high efficiency PERT and PERL silicon cells on a variety of SEH MCZ(B), FZ(B) and CZ(Ga) substrates
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- Progress in Photovoltaics, 2000, v. 8, n. 5, p. 549
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- Article
6
Overview of light degradation research on crystalline silicon solar cells
- Published in:
- Progress in Photovoltaics, 2000, v. 8, n. 5, p. 537, doi. 10.1002/1099-159X(200009/10)8:5<537::AID-PIP349>3.0.CO;2-W
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- Article
7
Improved open circuit voltage using metal mediated epitaxial growth in thyristor structure solar cells
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- Progress in Photovoltaics, 2000, v. 8, n. 5, p. 489, doi. 10.1002/1099-159X(200009/10)8:5<489::AID-PIP342>3.0.CO;2-8
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- Article
8
HIT<sup>TM</sup> cells -- high-efficiency crystalline Si cells with novel structure
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- Progress in Photovoltaics, 2000, v. 8, n. 5, p. 503
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- Article
9
Highly efficient 115-mum-thick solar cells on industrial Czochralskisilicon
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- Progress in Photovoltaics, 2000, v. 8, n. 5, p. 465
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- Article
10
Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide
- Published in:
- Progress in Photovoltaics, 2000, v. 8, n. 5, p. 529
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- Publication type:
- Article