Works matching IS 10627995 AND DT 2000 AND VI 8 AND IP 3

Results: 9

Use of displacement damage dose in an engineering model of GaAs solar cell radiation damage
Published in:
Progress in Photovoltaics, 2000, v. 8, n. 3, p. 339
By:
- Bailey, S.;
- Messenger, S. R.;
- Walters, R. J.;
- Summers, G. P.;
- Chock, R.;
- Long, K. J.;
- Morton, T. L.
Publication type:
Article
SPICE macromodeling of photovoltaic systems
Published in:
Progress in Photovoltaics, 2000, v. 8, n. 3, p. 293, doi. 10.1002/1099-159X(200005/06)8:3<293::AID-PIP310>3.0.CO;2-X
By:
- Moreno, A.;
- Silvestre, S.;
- Castaner, L.;
- Julve, J.
Publication type:
Article
Radiation hard multi-quantum well InP/InAsP solar cells for space applications
Published in:
Progress in Photovoltaics, 2000, v. 8, n. 3, p. 349
By:
- Monier, C.;
- Freundlich, A.;
- Messenger, S. R.;
- Walters, R. J.;
- Summers, G. P.;
- Newman, F.
Publication type:
Article
Overview, testing, and solutions to ESD-induced, solar-array string,on-orbit failures
Published in:
Progress in Photovoltaics, 2000, v. 8, n. 3, p. 315, doi. 10.1002/1099-159X(200005/06)8:3<315::AID-PIP320>3.0.CO;2-V
By:
- Meulenberg, A.
Publication type:
Article
In-orbit performance of hughes HS601HP dual junction GaInP2/GaAs/Ge solar arrays
Published in:
Progress in Photovoltaics, 2000, v. 8, n. 3, p. 307
By:
- Fodor, Jay S.;
- Powe, Joseph S.;
- Gelb, Steven W.
Publication type:
Article
High quality GaAs growth by MBE on Si using GeSi buffers and prospects for space photovoltaics
Published in:
Progress in Photovoltaics, 2000, v. 8, n. 3, p. 323, doi. 10.1002/1099-159X(200005/06)8:3<323::AID-PIP322>3.0.CO;2-U
By:
- Carlin, J. A.;
- Fitzgerald, E. A.;
- Ringel, S. A.;
- Bulsara, M.
Publication type:
Article
High growth rate metalorganic molecular beam epitaxy for the fabrication of GaAs space solar cells
Published in:
Progress in Photovoltaics, 2000, v. 8, n. 3, p. 333
By:
- Levy, M.;
- Street, S.;
- Dargan, P.;
- Newman, F.;
- Monier, C.;
- Freundlich, A.
Publication type:
Article
Effect of stoichometry on the radiation response of InxGa1-xAs solar cells
Published in:
Progress in Photovoltaics, 2000, v. 8, n. 3, p. 345, doi. 10.1002/1099-159X(200005/06)8:3<345::AID-PIP325>3.0.CO;2-D
By:
- Messenger, S. R.;
- Walters, R. J.;
- Summers, G. P.;
- Stan, M. A.;
- Hoffman, Jr., R. H.
Publication type:
Article
Booster reflectors for PV modules in Sweden
Published in:
Progress in Photovoltaics, 2000, v. 8, n. 3, p. 279, doi. 10.1002/1099-159X(200005/06)8:3<279::AID-PIP316>3.0.CO;2-#
By:
- Ronnelid, Mats;
- Karlsson, Bjorn;
- Wennerberg, Johan;
- Krohn, Peter
Publication type:
Article

Works matching IS 10627995 AND DT 2000 AND VI 8 AND IP 3

Use of displacement damage dose in an engineering model of GaAs solar cell radiation damage

SPICE macromodeling of photovoltaic systems

Radiation hard multi-quantum well InP/InAsP solar cells for space applications

Overview, testing, and solutions to ESD-induced, solar-array string,on-orbit failures

In-orbit performance of hughes HS601HP dual junction GaInP<sub>2</sub>/GaAs/Ge solar arrays

High quality GaAs growth by MBE on Si using GeSi buffers and prospects for space photovoltaics

High growth rate metalorganic molecular beam epitaxy for the fabrication of GaAs space solar cells

Effect of stoichometry on the radiation response of In<sub>x</sub>Ga<sub>1-x</sub>As solar cells

Booster reflectors for PV modules in Sweden