Works matching IS 1000985X AND DT 2025 AND VI 54 AND IP 3

Results: 18

Investigation of Boron Implanted Terminations for β-Ga2O3 Schottky Barrier Diodes.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 524, doi. 10.16553/j.cnki.issn1000-985x.2024.0287

By:

Rui, SHEN;
Zhonghui, YU Xinxin LI;
Duanyang, CHEN;
Qingling, SAI;
Bing, QIAO;
Likun, ZHOU;
Xin, DONG;
Hongj, QI;
Tangsheng, CHEN

Publication type:

Article

Mesa Termination Technology for NiO / β-Ga2O3 Heterojunction Diode.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 517, doi. 10.16553/j.cnki.issn1000-985x.2024.0328

By:

WEN Junpeng;
HAO Weibing;
HAN Zhao;
XU Guangwei;
LONG Shibing

Publication type:

Article

Investigation of Single-Event Effects of β-Ga2O3 Schottky Barrier Diodes with Mesa Termination.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 511, doi. 10.16553/j.cnki.issn1000-985x.2024.0325

By:

HE Song;
LIU Jinyang;
HAO Weibing;
XU Guangwei;
LONG Shibing

Publication type:

Article

Research Progress of Gallium Oxide Micro / Nano Structure-Based Detectors.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 491, doi. 10.16553/j.cnki.issn1000-985x.2025.0001

By:

CHEN Junhong;
HU Jianwen;
WEI Zhongming

Publication type:

Article

Research Progress on Heterogeneous Substrate Integration Technology for Gallium Oxide.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 471, doi. 10.16553/j.cnki.issn1000-985x.2024.0315

By:

QU Zhenyu;
XU Wenhui;
JIANG Haodong;
LIANG Hengshuo;
ZHAO Tiancheng;
XIE Yinfei;
SUN Huarui;
ZOU Xinbo;
YOU Tiangu;
QI Hongj;
HAN Genquan;
OU Xin

Publication type:

Article

Preparation of Ga2O3 :Si Thin Films and Study on the Performance of Its Solar-Blind Ultraviolet Photodetectors.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 462, doi. 10.16553/j.cnki.issn1000-985x.2024.0289

By:

ZHANG Xian;
YUE Zhiang;
ZHAO Enqin;
WEI Shuaikang;
YE Wenxuan;
HUANG Minyi;
XIN Meibo;
ZHAO Yang;
WANG Hui

Publication type:

Article

Simulation Study on the Effect of Gallium Source Temperature on the Temperature Field in LPCVD Gallium Oxide Epitaxy.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 452, doi. 10.16553/j.cnki.issn1000-985x.2024.0305

By:

HU Jichao;
ZHAO Qiyang;
YANG Zhihao;
YANG Ying;
PENG Bo;
DING Xiongjie;
LIU Wei;
ZHANG Hong

Publication type:

Article

A Novel Suboxide Chemical Vapor Transport Technique for Cost-Effective Growth of β-Ga2O3 Thick Films.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 445, doi. 10.16553/j.cnki.issn1000-985x.2024.0312

By:

CHEN Xuyang;
LI Haobo;
QIN Huayao;
XU Mingyao;
LU Yinmei;
HE Yunbin

Publication type:

Article

Effect of Substrate Crystal Planes on the Properties of Homoepitaxial n-Ga2O3Thin Films Grown by MOCVD.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 438

By:

HAN Yu;
JIAO Teng;
YU Han;
SAI Qinglin;
CHEN Duanyang;
LI Zhen;
LI Yihan;
ZHANG Zhao;
DONG Xin

Publication type:

Article

Study on the Epitaxial Growth of Gallium Oxide Heterostructure and UV Photodetector by Double Chamber Interconnected MOCVD.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 430, doi. 10.16553/j.cnki.issn1000-985x.2024.0322

By:

WANG Yuefei;
GAO Chong;
WU Zhe;
LI Bingsheng;
LIU Yichun

Publication type:

Article

ε-Ga2O3 Growth on c-Plane Sapphire Substrate with Metal-Organic Chemical Vapor Deposition.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 420

By:

WANG Ziming;
ZHANG Yachao;
FENG Qian;
LIU Shiteng;
LIU Yuhong;
WANG Yao;
WANG Long;
ZHANG Jincheng;
HAO Yue

Publication type:

Article

Dislocation Defects and Their Distribution Characteristics in Ga2O3 Crystal Grown by Edge-Defined Film-Fed Growth Method.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 414, doi. 10.16553/j.cnki.issn1000-985x.2024.0304

By:

YANG Wenjuan;
BU Yuzhe;
SAI Qinglin;
QI Hongji

Publication type:

Article

Preparation and Properties of 3 - 4 Inch Fe Doped β-Ga2O3 Single Crystal with High Resistance.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 409, doi. 10.16553/j.cnki.issn1000-985x.2025.0010

By:

HUO Xiaoqing;
ZHANG Shengnan;
ZHOU Jinjie;
WANG Yingmin;
CHENG Hongjuan;
SUN Qisheng

Publication type:

Article

Evaluation and Control of Crystallization Interface Deformation in the Growth of 6-Inch β-Ga2O3 Crystals by EFG Method.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 396, doi. 10.16553/j.cnki.issn1000-985x.2025.0006

By:

WANG Junlan;
LI Zaoyang;
YANG Yao;
QI Chongchong;
LIU Lijun

Publication type:

Article

Comparative Study on Thermal Field of Ga2O3 Single Crystal Growth Simulated by Different Thermal Radiation Models.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 386

By:

YIN Changshuai;
MENG Biao;
LIANG Kang;
CUI Hanwen;
LIU Sheng;
ZHANG Zhaofu

Publication type:

Article

Flow Field Symmetry of β-Ga2O3 Crystal Growth by EFG.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 378

By:

JIANG Bowen;
JI Weiguo;
ZHANG Lu;
FAN Qiming;
PAN Mingyan;
HUANG Haotian;
QI Hongji

Publication type:

Article

First-Principle Study on the Interaction Between Al / In Doping and (100) Twins in β-Ga2O3.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 371, doi. 10.16553/j.cnki.issn1000-985x.2024.0323

By:

LI Qi;
FU Bo;
YU Bowen;
ZHAO Hao;
LIN Na;
JIA Zhitai;
ZHAO Xian;
TAO Xutang

Publication type:

Article

Review on Mg Doping of Ga2O3.

Published in:

Journal of Synthetic Crystals, 2025, v. 54, n. 3, p. 361, doi. 10.16553/j.cnki.issn1000-985x.2024.0295

By:

SUN Rujun;
ZHANG Jinghui;
LI Yifan;
HAO Yue;
ZHANG Jincheng

Publication type:

Article

Works matching IS 1000985X AND DT 2025 AND VI 54 AND IP 3

Investigation of Boron Implanted Terminations for β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes.

Mesa Termination Technology for NiO / β-Ga<sub>2</sub>O<sub>3</sub> Heterojunction Diode.

Investigation of Single-Event Effects of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes with Mesa Termination.

Research Progress of Gallium Oxide Micro / Nano Structure-Based Detectors.

Research Progress on Heterogeneous Substrate Integration Technology for Gallium Oxide.

Preparation of Ga<sub>2</sub>O<sub>3</sub> :Si Thin Films and Study on the Performance of Its Solar-Blind Ultraviolet Photodetectors.

Simulation Study on the Effect of Gallium Source Temperature on the Temperature Field in LPCVD Gallium Oxide Epitaxy.

A Novel Suboxide Chemical Vapor Transport Technique for Cost-Effective Growth of β-Ga<sub>2</sub>O<sub>3</sub> Thick Films.

Effect of Substrate Crystal Planes on the Properties of Homoepitaxial n-Ga<sub>2</sub>O3<sub></sub>Thin Films Grown by MOCVD.

Study on the Epitaxial Growth of Gallium Oxide Heterostructure and UV Photodetector by Double Chamber Interconnected MOCVD.

ε-Ga<sub>2</sub>O<sub>3</sub> Growth on c-Plane Sapphire Substrate with Metal-Organic Chemical Vapor Deposition.

Dislocation Defects and Their Distribution Characteristics in Ga<sub>2</sub>O<sub>3</sub> Crystal Grown by Edge-Defined Film-Fed Growth Method.

Preparation and Properties of 3 - 4 Inch Fe Doped β-Ga<sub>2</sub>O<sub>3</sub> Single Crystal with High Resistance.

Evaluation and Control of Crystallization Interface Deformation in the Growth of 6-Inch β-Ga<sub>2</sub>O<sub>3</sub> Crystals by EFG Method.

Comparative Study on Thermal Field of Ga<sub>2</sub>O<sub>3</sub> Single Crystal Growth Simulated by Different Thermal Radiation Models.

Flow Field Symmetry of β-Ga<sub>2</sub>O<sub>3</sub> Crystal Growth by EFG.

First-Principle Study on the Interaction Between Al / In Doping and (100) Twins in β-Ga<sub>2</sub>O<sub>3</sub>.

Review on Mg Doping of Ga<sub>2</sub>O<sub>3</sub>.