Works matching IS 1000985X AND DT 2020 AND VI 49 AND IP 11

Results: 22

偏4°4H-SiC同质外延层上新形貌三角形缺陷研究.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2206

By:

胡继超;
王曦;
贾仁需;
蒲红斌;
陈治明

Publication type:

Article

AIN单晶生长行为研究.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2200

By:

程红娟;
金雷;
武红磊;
齐海涛;
王增华;
史月曾;
张丽

Publication type:

Article

高质量氧化镓单晶及肖特基二极管的制备.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2194

By:

张晋;
胡壮壮;
穆文祥;
田旭升;
冯倩;
贾志泰;
张进成;
陶绪堂;
郝跃

Publication type:

Article

硅基上Si<sub>1-x</sub>Ge<sub>x</sub>合金的外延生长及性能研究.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2178

By:

袁紫媛;
潘睿;
夏顺吉;
魏炼;
叶佳佳;
李晨;
陈延峰;
芦红

Publication type:

Article

高性能垂直型GaN-on-GaN二极管的研究.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2169

By:

杨树;
韩绍文;
李彦君;
李少成;
盛况

Publication type:

Article

氮化铝纳米结构的生长与物性研究.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2098

By:

刘梦婷;
韩杰才;
王先杰;
宋波

Publication type:

Article

SnSe热电半导体晶体生长技术创新进展.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2153

By:

白旭东;
胡皓阳;
蒋俊;
李荣斌;
申慧;
徐家跃;
金敏

Publication type:

Article

MPCVD单晶金刚石生长及其电子器件研究进展.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2139

By:

王艳丰;
王宏兴

Publication type:

Article

4H-SiC半导体同质外延生长技术进展.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2128

By:

冯淦;
孙永强;
钱卫宁;
陈志霞

Publication type:

Article

氮化物宽禁带半导体的MOCVD大失配异质外延.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 1953

By:

沈波;
杨学林;
许福军

Publication type:

Article

硅基金黄光LED器件性能及应用研究.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2161

By:

郭醒;
王光绪;
徐龙权;
熊新华;
杨俊宁;
张建立;
江风益

Publication type:

Article

氮化镓基Micro-LED显示技术研究进展.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2013

By:

蒋府龙;
许非凡;
刘召军;
刘斌;
郑有焊

Publication type:

Article

AlGaN量子结构及其紫外光源应用.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2068

By:

李金铰;
高娜;
林伟;
蔡端俊;
黄凯;
李书平;
康俊勇

Publication type:

Article

氢化物气相外延生长氮化镓单晶衬底的研究进展.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 1972

By:

张育民;
王建峰;
蔡德敏;
徐俞;
王明月;
胡晓剑;
徐琳;
徐科

Publication type:

Article

新一代Sic功率MOSFET器件研究进展.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2122

By:

柏松;
李士颜;
费晨曦;
刘强;
金晓行;
郝凤斌;
黄润;
杨勇

Publication type:

Article

AlGaN基宽禁带半导体光电材料与器件.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2046

By:

贲建伟;
孙晓娟;
蒋科;
陈洋;
石芝铭;
臧行;
张山丽;
黎大兵;
吕威

Publication type:

Article

AlGaN基深紫外发光二极管研究进展.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2079

By:

吴峰;
戴江南;
陈长清

Publication type:

Article

GaN基蓝绿光激光器发展现状与未来发展趋势.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 1996

By:

李方直;
胡磊;
田爱琴;
江灵荣;
张立群;
李德尧;
池田昌夫;
刘建平;
杨辉

Publication type:

Article

GaN基三维结构生长与器件应用.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 1984

By:

王珣;
汪莱;
郝智彪;
罗毅;
孙长征;
韩彦军;
熊兵;
王健;
李洪涛

Publication type:

Article

氮化锭单晶衬底制备技术发展与展望.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2038

By:

姜元希;
刘南柳;
张法碧;
王琦;
张国义

Publication type:

Article

氮化镓单晶的液相生长.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 2024

By:

任国强;
刘宗亮;
李腾坤;
徐科

Publication type:

Article

编娜辑.

Published in:

Journal of Synthetic Crystals, 2020, v. 49, n. 11, p. 1

By:

房斜

Publication type:

Article