纳米 CMOS 器件中热载流子产生缺陷局域分布的表征.
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- Progress in Physics / Wulixue Jinzhan, 2024, v. 44, n. 2, p. 96, doi. 10.13725/j.cnki.pip.2024.02.003
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Works matching IS 10000542 AND DT 2024 AND VI 44 AND IP 2
Results: 3
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2
卤化物钙钛矿金属位铋离子掺杂的调控研究进展.
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- Progress in Physics / Wulixue Jinzhan, 2024, v. 44, n. 2, p. 73, doi. 10.13725/j.cnki.pip.2024.02.002
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3
温稠密物质模拟的第-性原理方法进展.
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- Progress in Physics / Wulixue Jinzhan, 2024, v. 44, n. 2, p. 49, doi. 10.13725/j.cnki.pip.2024.02.001
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