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Featured issue: Lead-free solder and packaging.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 1, doi. 10.1007/s10854-011-0593-5
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Nanoparticles of Sn3.0Ag0.5Cu alloy synthesized at room temperature with large melting temperature depression.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 2, doi. 10.1007/s10854-011-0376-z
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Interface fracture surface energy of sol-gel bonded silicon wafers by three-point bending.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 8, doi. 10.1007/s10854-011-0381-2
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Effects of trace amounts of rare earth additions on the microstructures and interfacial reactions of Sn57Bi1Ag/Cu solder joints.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 14, doi. 10.1007/s10854-011-0383-0
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Preparation of highly conductive adhesives by in situ generated and sintered silver nanoparticles during curing process.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 22, doi. 10.1007/s10854-011-0388-8
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Influence of temperature gradient and growth rate on the mechanical properties of directionally solidified Sn-3.5 wt% Ag eutectic solder.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 31, doi. 10.1007/s10854-011-0398-6
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Thermo-compression bonding of electrodes between FPCB and RPCB by using Pb-free solders.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 41, doi. 10.1007/s10854-011-0402-1
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Impact of interfacial solubility on penetration of metals into dielectrics and the mechanism of failure.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 48, doi. 10.1007/s10854-011-0406-x
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Suppression of CuSn and Kirkendall voids at Cu/Sn-3.5Ag solder joints by adding a small amount of Ge.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 56, doi. 10.1007/s10854-011-0412-z
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Liquid-solid interfacial reactions of Sn-Ag and Sn-Ag-In solders with Cu under bump metallization.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 61, doi. 10.1007/s10854-011-0414-x
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Effect of Ti on the interfacial reaction between Sn and Cu.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 68, doi. 10.1007/s10854-011-0426-6
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Growth and consumption rates of the phase layers during interdiffusion in a diffusion couple with finite end member.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 75, doi. 10.1007/s10854-011-0438-2
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Effects of addition of copper particles of different size to Sn-3.5Ag solder.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 86, doi. 10.1007/s10854-011-0441-7
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Influence of silver additions on electrical, mechanical and structures properties of rapidly solidified Sn-0.7%Cu alloy from melt.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 94, doi. 10.1007/s10854-011-0469-8
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The morphology and kinetic evolution of intermetallic compounds at Sn-Ag-Cu solder/Cu and Sn-Ag-Cu-0.5AlO composite solder/Cu interface during soldering reaction.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 100, doi. 10.1007/s10854-011-0476-9
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Preparation and properties of a novel electrically conductive adhesive using a composite of silver nanorods, silver nanoparticles, and modified epoxy resin.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 108, doi. 10.1007/s10854-011-0485-8
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Die attach properties of Zn-Al-Mg-Ga based high-temperature lead-free solder on Cu lead-frame.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 115, doi. 10.1007/s10854-011-0511-x
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Relation between Kirkendall voids and intermetallic compound layers in the SnAg/Cu solder joints.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 124, doi. 10.1007/s10854-011-0516-5
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Suppression of interfacial intermetallic compounds between Sn-9Zn solder and Cu-substrate by adding Cu-particles in the solder.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 130, doi. 10.1007/s10854-011-0536-1
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Effect of intermetallic compounds on fracture behaviors of Sn3.0Ag0.5Cu lead-free solder joints during in situ tensile test.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 136, doi. 10.1007/s10854-011-0538-z
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Effects of microstructure and temperature on corrosion behavior of Sn-3.0Ag-0.5Cu lead-free solder.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 148, doi. 10.1007/s10854-011-0552-1
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Effects of rare earth additions on the microstructural evolution and microhardness of Sn30Bi0.5Cu and Sn35Bi1Ag solder alloys.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 156, doi. 10.1007/s10854-011-0566-8
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Effects of annealing temperatures on crystalline quality of ceramic thin films by RF-magnetron sputtering using Zn-enriched (BaSr)(ZnNb)O as target.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 164, doi. 10.1007/s10854-011-0375-0
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Synthesis and magnetic properties of NiFe/NiFeO nanocomposite.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 169, doi. 10.1007/s10854-011-0377-y
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Dielectric property and electrical conduction mechanism of ZrO-TiO composite thin films.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 174, doi. 10.1007/s10854-011-0378-x
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Ultra-thin BiFeO nanowires prepared by a sol-gel combustion method: an investigation of its multiferroic and optical properties.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 180, doi. 10.1007/s10854-011-0379-9
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Dielectric relaxation in complex perovskite Ba(BiTa)O.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 185, doi. 10.1007/s10854-011-0380-3
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Electrical and optical properties of one-dimensional metallophthalocyanine (M = Fe) thin films grown by thermal evaporation.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 193, doi. 10.1007/s10854-011-0382-1
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Dielectric and photoluminesent properties of (CaMgPb)A(TiZr)O [x = 0 & 0.25; A = Nb & Ta] microwave ceramics.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 200, doi. 10.1007/s10854-011-0386-x
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Preparation and dielectric properties of poly(arylene ether nitrile) containing carboxyl groups/carbon nanotubes composites.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 206, doi. 10.1007/s10854-011-0387-9
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The effect of the number of Ag layers on some physical properties of BiPbCaSrCuO.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 212, doi. 10.1007/s10854-011-0389-7
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Enhancement of thermal conductivity of hydrogenated silicon film by microcrystalline structure growth.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 224, doi. 10.1007/s10854-011-0390-1
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Dielectric properties and high-temperature dielectric relaxation of tungsten-bronze structure ceramics BaGdFeNbTaO.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 229, doi. 10.1007/s10854-011-0391-0
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Effects of Nb doping on microstructure and properties of BiTiNbO thin films prepared by magnetron sputtering.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 234, doi. 10.1007/s10854-011-0392-z
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Microwave dielectric properties and compatibility with silver of low-fired BaTiNbO ceramics with BaCu(BO) addition.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 238, doi. 10.1007/s10854-011-0393-y
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Bismuth effect in the structural, magnetic and dielectric properties of CoZn ferrite.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 243, doi. 10.1007/s10854-011-0395-9
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Poly (thienylene methine) grafted nanocrystalline TiO based hybrid solar cells.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 251, doi. 10.1007/s10854-011-0397-7
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Influence of post-deposition annealing in oxygen ambient on metal-organic decomposed CeO film spin coated on 4H-SiC.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 257, doi. 10.1007/s10854-011-0399-5
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Effect of deposition condition and UV-ozone post-treatment on work function of DC magnetron sputtered AZO thin films.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 267, doi. 10.1007/s10854-011-0400-3
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Nanocrystalline TiO thin films for NH monitoring: microstructural and physical characterization.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 273, doi. 10.1007/s10854-011-0403-0
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Microwave dielectric properties of CaLaTiO-LaAlO system ceramic materials.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 280, doi. 10.1007/s10854-011-0404-z
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Luminescent properties of GdPO:Eu nanorods.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 285, doi. 10.1007/s10854-011-0405-y
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Ti/NiCu/Ag and Al/NiCu/Ag thin film deposited on positive temperature coefficient (PTC) thermistor by direct current magnetron sputtering.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 290, doi. 10.1007/s10854-011-0407-9
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Synthesis and characterization of flexible one-dimensional TiO nanocrystalline films.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 295, doi. 10.1007/s10854-011-0408-8
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Photovoltaic properties of nanocrystalline CdS films deposited by SILAR and CBD techniques-a comparative study.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 302, doi. 10.1007/s10854-011-0409-7
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Effects of ZnO and CeO additions on the microstructure and dielectric properties of Mn-modified (BiNa)CaTiO ceramics.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 309, doi. 10.1007/s10854-011-0410-1
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Reaction behaviour of NiMO's (M = Li, Na) formation and its thermoelectric properties.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 315, doi. 10.1007/s10854-011-0411-0
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Preparation and photocatalytic activity of N-doped TiO nanotube array films.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 320, doi. 10.1007/s10854-011-0413-y
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Pr doped BaMoO octahedron to shuttle-like microcrystals: synthesis and luminescence properties.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 325, doi. 10.1007/s10854-011-0415-9
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Optimization of Bosch etch process for vertically stacked Si nanowires.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 334, doi. 10.1007/s10854-011-0534-3
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