Works matching IS 09574522 AND DT 2010 AND VI 21 AND IP 3

Results: 16

Microstructure and electrical properties of (Ta, Co, Pr) doped TiO2 based electroceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 246, doi. 10.1007/s10854-009-9900-9

By:

Sousa, V. C.;
Oliveira, M. M.;
Orlandi, M. O.;
Longo, E.

Publication type:

Article

Impression creep of the rare-earth doped Sn–2%Bi lead-free solder alloy.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 262, doi. 10.1007/s10854-009-9903-6

By:

Mahmudi, R.;
Geranmayeh, A. R.;
Salehi, M.;
Pirayesh, H.

Publication type:

Article

Study on creep characterization of nano-sized Ag particle-reinforced Sn–Pb composte solder joints.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 256, doi. 10.1007/s10854-009-9902-7

By:

Yaowu Shi;
Jianping Liu;
Zhidong Xia;
Yongping Lei;
Fu Guo;
Xiaoyan Li

Publication type:

Article

Microwave dielectric properties of low temperature firing (Li1/2Nd1/2)WO4 ceramic.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 252, doi. 10.1007/s10854-009-9901-8

By:

Huanfu Zhou;
Hong Wang;
Kecheng Li;
Minghui Zhang;
Haibo Yang

Publication type:

Article

Doping effect of Mg2+ on BaTiO3-based metal–dielectric composite system.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 298, doi. 10.1007/s10854-009-9909-0

By:

Lingxia Li;
Yu Liang;
Ping Zhang

Publication type:

Article

Investigation on deep level defects in rapid thermal annealed undoped n-type InP.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 285, doi. 10.1007/s10854-009-9906-3

By:

Janardhanam, V.;
Kumar, A. Ashok;
Reddy, V. Rajagopal;
Reddy, P. Narasimha

Publication type:

Article

Study on properties of forsterite/cordierite ceramic composites.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 231, doi. 10.1007/s10854-009-9897-0

By:

Haikui Zhu;
Hongqing Zhou;
Ying Xie;
Min Liu

Publication type:

Article

The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 218, doi. 10.1007/s10854-009-9896-1

By:

O'Leary, Stephen K.;
Foutz, Brian E.;
Shur, Michael S.;
Eastman, Lester F.

Publication type:

Article

Crystallization of silicon films by new metal mediated mechanism.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 270, doi. 10.1007/s10854-009-9904-5

By:

Chiung Wei Lin;
Seng Chi Lee;
Yeong Shyang Lee

Publication type:

Article

Structure and electrical properties of Bi0.5Na0.5TiO3-Y0.5Na0.5TiO3-BaTiO3 lead-free piezoelectric ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 291, doi. 10.1007/s10854-009-9907-2

By:

Dunmin Lin;
Kwok, K. W.

Publication type:

Article

Copper pillar bump design optimization for lead free flip-chip packaging.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 278, doi. 10.1007/s10854-009-9905-4

By:

Chen, K. M.;
Lin, T. S.

Publication type:

Article

Low temperature sintering of Li1.1Nb0.58Ti0.5O3- xBi2O3 dielectric with adjustable temperature coefficient.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 213, doi. 10.1007/s10854-009-9894-3

By:

Ping Zhang;
Lingxia Li;
Guochao Li;
Wei Zhang

Publication type:

Article

Structure and piezoelectric properties of lead-free (Na0.52K0.44− x)(Nb0.95− xSb0.05)O3- xLiTaO3 ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 241, doi. 10.1007/s10854-009-9899-y

By:

Jian Fu;
Ruzhong Zuo;
Lv, Danya;
Yi Liu;
Yang Wu

Publication type:

Article

Two critical grain sizes of Ba0.6Sr0.4TiO3 thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 236, doi. 10.1007/s10854-009-9898-z

By:

Hongwei Chen;
Chuanren Yang;
Jihua Zhang;
Wenjian Leng;
Hong Ji;
Zhihong Wang;
Jiaxuan Liao;
Li Zhao

Publication type:

Article

Low-temperature fabrication of BaBi2Nb2O9 ceramics by reaction controlled sintering.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 302, doi. 10.1007/s10854-009-9910-7

By:

Shigyo, Tatsuhiro;
Itoh, Hidenobu;
Takahashi, Junichi

Publication type:

Article

Effect of post annealing on structural and optical properties of ZnO thin films deposited by vacuum coating technique.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 309, doi. 10.1007/s10854-009-9912-5

By:

Periasamy, C.;
Prakash, Rajiv;
Chakrabarti, P.

Publication type:

Article

Works matching IS 09574522 AND DT 2010 AND VI 21 AND IP 3

Microstructure and electrical properties of (Ta, Co, Pr) doped TiO<sub>2</sub> based electroceramics.

Impression creep of the rare-earth doped Sn–2%Bi lead-free solder alloy.

Study on creep characterization of nano-sized Ag particle-reinforced Sn–Pb composte solder joints.

Microwave dielectric properties of low temperature firing (Li<sub>1/2</sub>Nd<sub>1/2</sub>)WO<sub>4</sub> ceramic.

Doping effect of Mg<sup>2+</sup> on BaTiO<sub>3</sub>-based metal–dielectric composite system.

Investigation on deep level defects in rapid thermal annealed undoped n-type InP.

Study on properties of forsterite/cordierite ceramic composites.

The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis.

Crystallization of silicon films by new metal mediated mechanism.

Structure and electrical properties of Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-Y<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-BaTiO<sub>3</sub> lead-free piezoelectric ceramics.

Copper pillar bump design optimization for lead free flip-chip packaging.

Low temperature sintering of Li<sub>1.1</sub>Nb<sub>0.58</sub>Ti<sub>0.5</sub>O<sub>3</sub>- xBi<sub>2</sub>O<sub>3</sub> dielectric with adjustable temperature coefficient.

Structure and piezoelectric properties of lead-free (Na<sub>0.52</sub>K<sub>0.44− x</sub>)(Nb<sub>0.95− x</sub>Sb<sub>0.05</sub>)O<sub>3</sub>- xLiTaO<sub>3</sub> ceramics.

Two critical grain sizes of Ba<sub>0.6</sub>Sr<sub>0.4</sub>TiO<sub>3</sub> thin films.

Low-temperature fabrication of BaBi<sub>2</sub>Nb<sub>2</sub>O<sub>9</sub> ceramics by reaction controlled sintering.

Effect of post annealing on structural and optical properties of ZnO thin films deposited by vacuum coating technique.