Works matching IS 09574522 AND DT 2010 AND VI 21 AND IP 12
Results: 19
Structural, optical, electrical and morphological properties of ZnTe films deposited by electron beam evaporation.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1229, doi. 10.1007/s10854-009-0051-9
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Nanocrystalline ZnO thin films: optoelectronic and gas sensing properties.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1332, doi. 10.1007/s10854-010-0071-5
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Effect of deposition ambient on structural and optical properties of MgZnO alloy thin films grown by RF sputtering.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1327, doi. 10.1007/s10854-010-0070-6
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Micro void growth in NiSnP layer between (Cu,Ni)Sn intermetallic compound and NiP by higher reflow temperature and multiple reflow.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1337, doi. 10.1007/s10854-010-0072-4
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Preparation and characterizations of tungsten oxide electrochromic nanomaterials.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1313, doi. 10.1007/s10854-010-0068-0
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Preparation and microwave characterization of BaWO filled polytetrafluoroethylene laminates for microwave substrate applications.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1255, doi. 10.1007/s10854-010-0058-2
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Preparation, electrocatalytic and photocatalytic performances of nanoscaled CuO/CoO composite oxides.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1262, doi. 10.1007/s10854-010-0059-1
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Morphology and time resolved photoluminescence of electrochemically synthesized zinc oxide nanowires.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1277, doi. 10.1007/s10854-010-0061-7
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Low-temperature sintering and microwave dielectric properties of TiO-based LTCC materials.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1285, doi. 10.1007/s10854-010-0064-4
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Linear field emission cathode with ZnO grown in aqueous solutions.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1281, doi. 10.1007/s10854-010-0063-5
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Role of substrate temperature on the structural, optoelectronic and morphological properties of (400) oriented indium tin oxide thin films deposited using RF sputtering technique.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1299, doi. 10.1007/s10854-010-0066-2
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Conductive poly(methyl methacrylate)-polypyrrole dodecylbenzenesulfonate (PMMA-PPy.DBSA) blends prepared in solution in the presence of hydroquinone.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1270, doi. 10.1007/s10854-010-0060-8
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Thermally activated dissipation mechanism in Sn doped CuTl-1223 superconductors.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1308, doi. 10.1007/s10854-010-0067-1
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MOS capacitors with metal gate/high-k dielectrics on GaAs bulk substrate.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1322, doi. 10.1007/s10854-010-0069-z
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Phase formation sequences and mechanism of MgB superconductor with minor Sn doping.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1240, doi. 10.1007/s10854-009-0053-7
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The preparation, mechanical and dielectric properties of PEN/HBCuPc hybrid films.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1244, doi. 10.1007/s10854-010-0054-6
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Fabrication of GaN nanowires and nanorods catalyzed with tantalum.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1249, doi. 10.1007/s10854-010-0057-3
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Electrical and optical properties of poly(2-dodecanoylsulfanyl- p-phenylenevnylene) and its application in electroluminescent devices.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1235, doi. 10.1007/s10854-009-0052-8
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Characteristics of ZnS films pulse plated using non-aqueous electrolytes.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 12, p. 1293, doi. 10.1007/s10854-010-0065-3
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