Works matching IS 09574522 AND DT 2009 AND VI 20 AND IP 2


Results: 17
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    Sulfonated polyaniline/n-type silicon junctions.

    Published in:
    Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 2, p. 123, doi. 10.1007/s10854-008-9645-x
    By:
    • da Silva, Wilson J.;
    • Hümmelgen, Ivo A.;
    • Mello, Regina M. Q.
    Publication type:
    Article
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    Studies of the temperature coefficient of capacitance (TCC) of a new electroceramic composite: Pb(Fe<sub>0.5</sub>Nb<sub>0.5</sub>)O<sub>3</sub> (PFN)–Cr<sub>0.75</sub>Fe<sub>1.25</sub>O<sub>3</sub>(CRFO).

    Published in:
    Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 2, p. 149, doi. 10.1007/s10854-008-9673-6
    By:
    • Freire, F. N. A.;
    • Santos, M. R. P.;
    • Pereira, F. M. M.;
    • Sohn, R. S. T. M.;
    • Almeida, J. S.;
    • Medeiros, A. M. L.;
    • Sancho, E. O.;
    • Costa, M. M.;
    • Sombra, A. S. B.
    Publication type:
    Article
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    Photoluminescence from RF sputtered SiCBN thin films.

    Published in:
    Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 2, p. 144, doi. 10.1007/s10854-008-9667-4
    By:
    • Vijayakumar, Arun;
    • Warren, Andrew P.;
    • Todi, Ravi M.;
    • Sundaram, Kalpathy B.
    Publication type:
    Article
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