Works matching IS 09574522 AND DT 2009 AND VI 20 AND IP 12
Results: 18
Growth and characterization of ZnO films on (11-20) sapphire substrates by atomic layer deposition using DEZn and N<sub>2</sub>O.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1255, doi. 10.1007/s10854-009-9861-z
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- Article
Preparation and photoelectric properties of Ti doped ZnO thin films annealed in vacuum.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1225, doi. 10.1007/s10854-009-9856-9
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Multiferroic YMn<sub>2</sub>O<sub>5</sub> fine powders derived from hydrothermal process.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1159, doi. 10.1007/s10854-008-9844-5
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Variation of optical band gap in anodically grown nanocrystalline ZnO thin films at room temperature—effect of electrolyte concentrations.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1203, doi. 10.1007/s10854-009-9852-0
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A novel selective removal process of cobalt silicide.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1164, doi. 10.1007/s10854-008-9845-4
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Effects of trace amount addition of rare earth on properties and microstructure of Sn–Ag–Cu alloys.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1193, doi. 10.1007/s10854-008-9850-7
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ZnTiO<sub>3</sub>-based ceramics sintered at low temperature with boron addition for multilayer ceramic capacitor applications.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1186, doi. 10.1007/s10854-008-9849-0
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Fabrication and application of long silicon nanowire yarns.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1200, doi. 10.1007/s10854-008-9851-6
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- Article
Interfacial characteristic of (Ba,Sr)TiO<sub>3</sub> thin films deposited on different bottom electrodes.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1208, doi. 10.1007/s10854-009-9853-z
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- Article
Electrical behaviour of discontinuous silver films deposited on softened polystyrene and poly (4-vinylpyridine) blends.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1182, doi. 10.1007/s10854-008-9848-1
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Photoluminescence characteristics of synthesized copper doped Cd<sub>1− x</sub>Zn<sub> x</sub>S quantum dots.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1178, doi. 10.1007/s10854-008-9847-2
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Influential factors in determining the adhesive strength of ACF joints.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1247, doi. 10.1007/s10854-009-9860-0
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- Article
n-ZnO:Ga/ i-ZnO/ p-Si heterojunction light emitting diodes fabricated on patterned Si substrates.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1214, doi. 10.1007/s10854-009-9854-y
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- Article
Low chromatic aberration of gradient refractive index rod lens for Na<sup>+</sup>/Li<sup>+</sup> ion exchange using oxide compositions model.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1229, doi. 10.1007/s10854-009-9857-8
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Improved characteristics of sprayed CdO films by rapid thermal annealing.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1219, doi. 10.1007/s10854-009-9855-x
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Studies on the growth and stability of silver nanoparticles synthesized by electron beam irradiation.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1233, doi. 10.1007/s10854-009-9858-7
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- Article
Effects of Ga–Ag, Ga–Al and Al–Ag additions on the wetting characteristics of Sn–9Zn–X–Y lead-free solders.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1239, doi. 10.1007/s10854-009-9859-6
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Synthesis of Fe–Co alloy and cobalt–magnetite composites doped with Nd<sup>3+</sup> by using iron disproportionation.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1172, doi. 10.1007/s10854-008-9846-3
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