Works matching IS 09574522 AND DT 2009 AND VI 20
Results: 294
Growth and characterization of ZnO films on (11-20) sapphire substrates by atomic layer deposition using DEZn and N<sub>2</sub>O.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1255, doi. 10.1007/s10854-009-9861-z
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Preparation and photoelectric properties of Ti doped ZnO thin films annealed in vacuum.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1225, doi. 10.1007/s10854-009-9856-9
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Multiferroic YMn<sub>2</sub>O<sub>5</sub> fine powders derived from hydrothermal process.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1159, doi. 10.1007/s10854-008-9844-5
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Variation of optical band gap in anodically grown nanocrystalline ZnO thin films at room temperature—effect of electrolyte concentrations.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1203, doi. 10.1007/s10854-009-9852-0
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A novel selective removal process of cobalt silicide.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1164, doi. 10.1007/s10854-008-9845-4
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Effects of trace amount addition of rare earth on properties and microstructure of Sn–Ag–Cu alloys.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1193, doi. 10.1007/s10854-008-9850-7
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ZnTiO<sub>3</sub>-based ceramics sintered at low temperature with boron addition for multilayer ceramic capacitor applications.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1186, doi. 10.1007/s10854-008-9849-0
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Fabrication and application of long silicon nanowire yarns.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1200, doi. 10.1007/s10854-008-9851-6
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Interfacial characteristic of (Ba,Sr)TiO<sub>3</sub> thin films deposited on different bottom electrodes.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1208, doi. 10.1007/s10854-009-9853-z
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Electrical behaviour of discontinuous silver films deposited on softened polystyrene and poly (4-vinylpyridine) blends.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1182, doi. 10.1007/s10854-008-9848-1
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Photoluminescence characteristics of synthesized copper doped Cd<sub>1− x</sub>Zn<sub> x</sub>S quantum dots.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1178, doi. 10.1007/s10854-008-9847-2
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Influential factors in determining the adhesive strength of ACF joints.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1247, doi. 10.1007/s10854-009-9860-0
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n-ZnO:Ga/ i-ZnO/ p-Si heterojunction light emitting diodes fabricated on patterned Si substrates.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1214, doi. 10.1007/s10854-009-9854-y
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Low chromatic aberration of gradient refractive index rod lens for Na<sup>+</sup>/Li<sup>+</sup> ion exchange using oxide compositions model.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1229, doi. 10.1007/s10854-009-9857-8
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Improved characteristics of sprayed CdO films by rapid thermal annealing.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1219, doi. 10.1007/s10854-009-9855-x
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Studies on the growth and stability of silver nanoparticles synthesized by electron beam irradiation.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1233, doi. 10.1007/s10854-009-9858-7
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Effects of Ga–Ag, Ga–Al and Al–Ag additions on the wetting characteristics of Sn–9Zn–X–Y lead-free solders.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1239, doi. 10.1007/s10854-009-9859-6
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Synthesis of Fe–Co alloy and cobalt–magnetite composites doped with Nd<sup>3+</sup> by using iron disproportionation.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 12, p. 1172, doi. 10.1007/s10854-008-9846-3
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Novel nonlinear optical materials based on dihydropyridine organic chromophore deposited on mica substrate.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1073, doi. 10.1007/s10854-008-9828-5
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Study on the biostability of chlorophyll a entrapped in silica gel nanomatrix.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1068, doi. 10.1007/s10854-008-9827-6
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Optical and structural characteristics of Sb-doped SnO<sub>2</sub> thin films grown on Si (111) substrates by Sol–Gel technique.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1078, doi. 10.1007/s10854-008-9829-4
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Effects of La occupation site on the dielectric and piezoelectric properties of [Bi<sub>0.5</sub>(Na<sub>0.75</sub>K<sub>0.15</sub>Li<sub>0.10</sub>)<sub>0.5</sub>]TiO<sub>3</sub> ceramics.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1090, doi. 10.1007/s10854-008-9832-9
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Rate-dependent deformation of Sn–3.5Ag lead-free solder.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1083, doi. 10.1007/s10854-008-9830-y
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Influence of minor Bi additions on the interfacial morphology between Sn–Zn– xBi solders and a Cu layer.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1112, doi. 10.1007/s10854-008-9835-6
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Structural transformations in amorphous As<sub> x</sub>Se<sub>1− x</sub> (0 ≤ x ≤ 0.20) films.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1095, doi. 10.1007/s10854-008-9833-8
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Dielectric property of Ba<sub>0.6</sub>Sr<sub>0.4</sub>TiO<sub>3</sub>–Mg<sub>0.9</sub>Zn<sub>0.1</sub>O ceramic with additives of Sm<sub>2</sub>O<sub>3</sub> and Ta<sub>2</sub>O<sub>5</sub>.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1106, doi. 10.1007/s10854-008-9834-7
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Low-temperature sintered (Zn<sub>0.65</sub>Mg<sub>0.35</sub>)TiO<sub>3</sub> microwave ceramics doped with CuV<sub>2</sub>O<sub>6</sub>.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1123, doi. 10.1007/s10854-008-9837-4
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Aggregation of self-assembled Ni(OH)<sub>2</sub> nanosheets under hydrothermal conditions.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1118, doi. 10.1007/s10854-008-9836-5
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Microstructure and microwave dielectric characteristics of CaO–B<sub>2</sub>O<sub>3</sub>–SiO<sub>2</sub> glass ceramics.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1135, doi. 10.1007/s10854-008-9839-2
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Influence of rapid thermal annealing (RTA) on the structural and electrical properties of SnS films.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1129, doi. 10.1007/s10854-008-9838-3
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Growth of mane-like ZnS nanostructures by using a two-heating zone-tube furnace: structural characterization and photoluminescence.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1150, doi. 10.1007/s10854-008-9842-7
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Adhesion characteristics of Cu/Ni–Cr/polyimide flexible copper clad laminates according to Ni:Cr ratio and Cu electroplating layer thickness.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 9, p. 885, doi. 10.1007/s10854-008-9811-1
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Effect of halogen substitution on azo-naphthol dye based poly(alkyloxymethacrylate)s and their Z-scan measurements.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 9, p. 835, doi. 10.1007/s10854-008-9803-1
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Freeform fabrication of metallic patterns by unforced electrohydrodynamic jet printing of organic silver ink.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1154, doi. 10.1007/s10854-008-9843-6
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Growth and fabrication issues of GaSb-based detectors.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1039, doi. 10.1007/s10854-009-9927-y
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Microwave ferrites, part 2: passive components and electrical tuning.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 10, p. 911, doi. 10.1007/s10854-009-9924-1
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Trap level spectroscopy in amorphous selenium-based semiconductors.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1059, doi. 10.1007/s10854-009-9951-y
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Effects of Nb<sup>5+</sup> doping on sintering and electrical properties of lead-free (Bi<sub>0.5</sub>Na<sub>0.5</sub>)TiO<sub>3</sub> ceramics.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1140, doi. 10.1007/s10854-008-9840-9
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Effect of EFO parameters on Cu FAB hardness and work hardening in thermosonic wire bonding.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1144, doi. 10.1007/s10854-008-9841-8
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Formation of interfacial structure of Sn–3.7Ag–0.9Zn eutectic solder with different Al additions.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 9, p. 861, doi. 10.1007/s10854-008-9807-x
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Effects of thermal annealing on the electrical and structural properties of Pt/Mo Schottky contacts on n-type GaN.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 10, p. 1018, doi. 10.1007/s10854-008-9824-9
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Enhanced polarization in zirconia-P(VDF-TrFE) laminar composite dielectrics.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 10, p. 1001, doi. 10.1007/s10854-008-9823-x
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Influence of nitro group substitution at molecular ligand on optical, structural, charge-transport and photovoltaic properties of Sn (II) phthalocyanine.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 10, p. 984, doi. 10.1007/s10854-008-9821-z
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Dielectric and pyroelectric properties of monovalent-lithium modified trivalent-samarium doped barium strontium sodium niobate tungsten bronze structured ceramics.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 10, p. 977, doi. 10.1007/s10854-008-9818-7
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Secondary electron emission from nanocomposite carbon films.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 10, p. 996, doi. 10.1007/s10854-008-9822-y
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Effects of small amounts of Ni/P/Ce element additions on the microstructure and properties of Sn3.0Ag0.5Cu solder alloy.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 10, p. 1008, doi. 10.1007/s10854-008-9826-7
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SEM and specific contact resistance analysis of screen-printed Ag contacts formed by fire-through process on the shallow emitters of silicon solar cell.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 10, p. 1026, doi. 10.1007/s10854-008-9815-x
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A quantitative characterization of the optical absorption spectrum associated with hydrogenated amorphous silicon.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 10, p. 1033, doi. 10.1007/s10854-008-9825-8
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Structural, optoelectronic and electrochemical properties of nickel oxide films.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 10, p. 953, doi. 10.1007/s10854-008-9819-6
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Comparative study of synthesis, characterization and electric properties of polypyrrole and polythiophene composites with tellurium oxide.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 10, p. 958, doi. 10.1007/s10854-008-9817-8
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