Works matching IS 09574522 AND DT 2008 AND VI 19 AND IP 8/9

Results: 43

High- k gate stack Hf x Ti1− x ON/SiO2 for SiC MOS devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 894, doi. 10.1007/s10854-008-9623-3

By:

Lin, L. M.;
Lai, P. T.

Publication type:

Article

Electronic and magnetic properties of novel layered cobalt dioxides A x CoO2 with A = Li, Na, and K.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 883, doi. 10.1007/s10854-008-9573-9

By:

Sugiyama, Jun;
Ikedo, Yutaka;
Russo, Peter L.;
Mukai, Kazuhiko;
Nozaki, Hiroshi;
Brewer, Jess H.;
Ansaldo, Eduardo J.;
Chow, Kim H.;
Andreica, Daniel;
Amato, Alex;
Fujii, Takenori;
Asamitsu, Atsushi;
Ariyoshi, Kingo;
Ohzuku, Tsutomu

Publication type:

Article

Structural and electrical properties of thermally evaporated 1,4-Bis-(2-hydroxyethylamino)-9,10-anthraquinone films.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 841, doi. 10.1007/s10854-007-9488-x

By:

Bedi, R. K.;
Bhatia, Sonik;
Kaur, Navneet;
Kumar, Subodh

Publication type:

Article

Growth condition dependence of zinc oxide nanostructures on Si substrates in an electrochemical process.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 908, doi. 10.1007/s10854-008-9680-7

By:

Jingbiao Cui

Publication type:

Article

Tunneling currents through ultra thin HfO2/Al2O3/HfO2 triple layer gate dielectrics for advanced MIS devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 902, doi. 10.1007/s10854-008-9679-0

By:

Tyagi, Hitender Kumar;
George, P. J.

Publication type:

Article

Shallow and deep donors in n-type ZnO characterized by admittance spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 687, doi. 10.1007/s10854-007-9380-8

By:

Seghier, D.;
Gislason, H. P.

Publication type:

Article

Optical and structural properties of SiC nanocrystals.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 682, doi. 10.1007/s10854-007-9379-1

By:

Morales Rodriguez, M.;
Díaz Cano, A.;
Torchynska, T. V.;
Palacios Gomez, J.;
Gomez Gasga, G.;
Polupan, G.;
Mynbaeva, M.

Publication type:

Article

The recent advances of research on p-type ZnO thin film.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 727, doi. 10.1007/s10854-007-9398-y

By:

Dai, L. P.;
Deng, H.;
Mao, F. Y.;
Zang, J. D.

Publication type:

Article

A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 678, doi. 10.1007/s10854-007-9378-2

By:

Zvanut, M. E.;
Ngetich, G.;
Chung, H. J.;
Polyakov, A. Y.;
Skowronski, M.

Publication type:

Article

Buffer-trapping effects on current slump in AlGaN/GaN HEMTs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 735, doi. 10.1007/s10854-007-9399-x

By:

Nakajima, Atsushi;
Horio, Kazushige

Publication type:

Article

Optical spectroscopy of a semi-insulating GaAs/AlGaAs multiple quantum well system near double exciton–polariton and Bragg resonance.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 699, doi. 10.1007/s10854-007-9382-6

By:

Chaldyshev, V. V.;
Shkolnik, A. S.;
Evtikhiev, V. P.;
Holden, T.

Publication type:

Article

Independent control of InAs quantum dot density and size on AlxGa1–xAs surfaces.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 714, doi. 10.1007/s10854-007-9389-z

By:

Andrews, Aaron Maxwell;
Schramböck, Matthias;
Roch, Tomas;
Schrenk, Werner;
Gornik, Erich;
Strasser, Gottfried

Publication type:

Article

The effects of Al doping on the optical constants of ZnO thin films prepared by spray pyrolysis method.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 704, doi. 10.1007/s10854-007-9386-2

By:

Caglar, Mujdat;
Ilican, Saliha;
Caglar, Yasemin;
Yakuphanoglu, Fahrettin

Publication type:

Article

Growth and characterization of III-N bulk crystals.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 845, doi. 10.1007/s10854-007-9500-5

By:

Frazier, R. M.;
Feigelson, B. N.;
Twigg, M. E.;
Murthy, M.;
Freitas, J. A.

Publication type:

Article

Cobalt substituted ZnO thin films: a potential candidate for spintronics.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 849, doi. 10.1007/s10854-007-9501-4

By:

Bhatti, Kanwal;
Malik, Viv Kumar;
Chaudhary, Sujeet

Publication type:

Article

Structural perfection of laterally overgrown GaN layers grown in polar- and non-polar directions.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 815, doi. 10.1007/s10854-007-9472-5

By:

Liliental-Weber, Zuzanna;
Ni, X.;
Morkoc, H.

Publication type:

Article

Orientation and temperature dependence of the tensile behavior of GaN nanowires: an atomistic study.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 863, doi. 10.1007/s10854-007-9526-8

By:

Zhiguo Wang;
Xiaotao Zu;
Li Yang;
Fei Gao;
Weber, William J.

Publication type:

Article

Investigation of NiO x -based contacts on p-GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 855, doi. 10.1007/s10854-007-9520-1

By:

Liday, J.;
Hotový, I.;
Sitter, H.;
Vogrinčič, P.;
Vincze, A.;
Vávra, I.;
Šatka, A.;
Ecke, G.;
Bonanni, A.;
Breza, J.;
Simbrunner, C.;
Plochberger, B.

Publication type:

Article

Electrical characterization of 4H–SiC Schottky diodes with a RuO2 and a RuWO x Schottky contacts.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 783, doi. 10.1007/s10854-007-9409-z

By:

Buc, Dalibor;
Stuchlikova, Lubica;
Harmatha, Ladislav;
Hotovy, Ivan

Publication type:

Article

Microstructure and luminescence properties of Co-doped SnO2 nanoparticles synthesized by hydrothermal method.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 868, doi. 10.1007/s10854-007-9543-7

By:

Fang, L. M.;
Zu, X. T.;
Li, Z. J.;
Zhu, S.;
Liu, C. M.;
Wang, L. M.;
Gao, F.

Publication type:

Article

Investigation of deep levels in InGaAs channels comprising thin layers of InAs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 797, doi. 10.1007/s10854-007-9451-x

By:

Dobbert, J.;
Kunets, Vas. P.;
Morgan, T. Al.;
Guzun, D. I;
Mazur, Yu. I.;
Masselink, W. T.;
Salamo, G. J.

Publication type:

Article

Dependency of oxygen partial pressure on the characteristics of ZnO films grown by radio frequency magnetron sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 744, doi. 10.1007/s10854-007-9401-7

By:

Ahn, C. H.;
Kim, Y. Y.;
Kang, S. W.;
Kong, B. H.;
Mohanta, S. K.;
Cho, H. K.;
Kim, J. H.;
Lee, H. S.

Publication type:

Article

Preface: 2007 Semiconducting and Insulating Materials Conference.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 677, doi. 10.1007/s10854-008-9722-1

By:

Wang, Zhiming M.;
Kiesel, Peter

Publication type:

Article

Depth profiles and concentration percentages of SiO2 and SiO x induced by ion bombardment of a silicon (100) target.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 898, doi. 10.1007/s10854-008-9658-5

By:

Chin Shuang Lee;
Chia Chan Chen;
Chin Shun Hsu;
Shyong Lee;
Ron-Kai Hsu

Publication type:

Article

Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 692, doi. 10.1007/s10854-007-9381-7

By:

Strelchuk, V. V.;
Mazur, Yu. I.;
Wang, Zh. M.;
Schmidbauer, M.;
Kolomys, O. F.;
Valakh, M. Ya.;
Manasreh, M. O.;
Salamo, G. J.

Publication type:

Article

Temperature dependence of ZnO thin films grown on Si substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 749, doi. 10.1007/s10854-007-9402-6

By:

Kim, Y. Y.;
Ahn, C. H.;
Kang, S. W.;
Kong, B. H.;
Mohanta, S. K.;
Cho, H. K.;
Lee, J. Y.;
Kim, H. S.

Publication type:

Article

Growth and characteristics of ternary Zn1− x Mg x O films using magnetron co-sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 755, doi. 10.1007/s10854-007-9403-5

By:

Si Woo Kang;
Young Yi Kim;
Cheol Hyoun Ahn;
Mohanta, Sanjay Kumar;
Hyung Koun Cho

Publication type:

Article

Pulsed laser deposited ZnO films and their humidity sensing behavior.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 788, doi. 10.1007/s10854-007-9414-2

By:

Dixit, Shobhna;
Srivastava, Anchal;
Shukla, R. K.;
Srivastava, Atul

Publication type:

Article

Negative magnetoresistance in SiC heteropolytype junctions.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 793, doi. 10.1007/s10854-007-9417-z

By:

Lebedev, Alexander Alexandrovich;
Abramov, P. L.;
Agrinskaya, N. V.;
Kozub, V. I.;
Kuznetsov, A. N.;
Lebedev, S. P.;
Oganesyan, G. A.;
Sorokin, L. M.;
Chernyaev, A. V.;
Shamshur, D. V.

Publication type:

Article

Characterization of deep centers in semi-insulating SiC and HgI2: Application of discharge current transient spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 810, doi. 10.1007/s10854-007-9454-7

By:

Matsuura, Hideharu;
Takahashi, Miyuki;
Nagata, Shunji;
Taniguchi, Kazuo

Publication type:

Article

Molecular beam epitaxy of semipolar AlN( $$11\bar{2}2$$ ) and GaN( $$11\bar{2}2$$ ) on m-sapphire.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 805, doi. 10.1007/s10854-007-9453-8

By:

Lahourcade, Lise;
Bellet-Amalric, Edith;
Monroy, Eva;
Chauvat, Marie Pierre;
Ruterana, Pierre

Publication type:

Article

Cooperative Jahn–Teller transition in Li[Li x Mn2– x ]O4: a muon-spin rotaion/relaxation (μSR) view.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 875, doi. 10.1007/s10854-007-9548-2

By:

Sugiyama, Jun;
Mukai, Kazuhiko;
Ikedo, Yutaka;
Russo, Peter L.;
Suzuki, Takao;
Watanabe, Isao;
Brewer, Jess H.;
Ansaldo, Eduardo J.;
Chow, Kim H.;
Ariyoshi, Kingo;
Ohzuku, Tsutomu

Publication type:

Article

Radiation effects in natural quartz crystals.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 709, doi. 10.1007/s10854-007-9388-0

By:

Bahadur, Harish;
Tissoux, Hélène;
Usami, Teruo;
Toyoda, Shin

Publication type:

Article

Deep UV light emitting diodes grown by gas source molecular beam epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 764, doi. 10.1007/s10854-007-9405-3

By:

Nikishin, Sergey;
Borisov, Boris;
Kuryatkov, Vladimir;
Holtz, Mark;
Garrett, Gregory A.;
Sarney, Wendy L.;
Sampath, Anand V.;
Hongen Shen;
Wraback, Michael;
Usikov, Alexander;
Dmitriev, Vladimir

Publication type:

Article

Low thermal drift in highly sensitive doped channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As micro-Hall element.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 776, doi. 10.1007/s10854-007-9408-0

By:

Kunets, Vasyl P.;
Dobbert, Julia;
Mazur, Yuriy I.;
Salamo, Gregory J.;
Müller, Uwe;
Masselink, W. T.;
Kostial, Helmar;
Wiebicke, Evi

Publication type:

Article

InP based semiconductor structures for radiation detection.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 770, doi. 10.1007/s10854-007-9407-1

By:

Procházková, Olga;
Grym, Jan;
Pekárek, Ladislav;
Zavadil, Jiří;
Žďánský, Karel

Publication type:

Article

Structural and magnetic properties of MnAs/GaAs ferromagnetic semiconductor nanocomposite material.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 740, doi. 10.1007/s10854-007-9400-8

By:

Kwiatkowski, Adam;
Wasik, Dariusz;
Kamińska, Maria;
Borysiuk, Jolanta;
Bożek, Rafal;
Sadowski, Janusz;
Twardowski, Andrzej

Publication type:

Article

Morphology control of 1D ZnO nanostructures grown by metal-organic chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 760, doi. 10.1007/s10854-007-9404-4

By:

Dong Chan Kim;
Bo Hyun Kong;
Hyung Koun Cho

Publication type:

Article

A graphical peak analysis method for characterizing impurities in SiC, GaN and diamond from temperature-dependent majority-carrier concentration.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 720, doi. 10.1007/s10854-007-9390-6

By:

Matsuura, Hideharu

Publication type:

Article

Low temperature crystallization of amorphous silicon carbide thin films for p–n junction devices fabrication.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 801, doi. 10.1007/s10854-007-9452-9

By:

Hossain, Maruf;
Minseong Yun;
Korampally, Venumadhav;
Gangopadhyay, Shubhra

Publication type:

Article

Mn and other magnetic impurities in GaN and other III–V semiconductors – perspective for spintronic applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 828, doi. 10.1007/s10854-007-9486-z

By:

Kaminska, Maria;
Twardowski, Andrzej;
Wasik, Dariusz

Publication type:

Article

Latest developments in GaN-based quantum devices for infrared optoelectronics.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 821, doi. 10.1007/s10854-007-9482-3

By:

Monroy, Eva;
Guillot, Fabien;
Leconte, Sylvain;
Nevou, Laurent;
Doyennette, Laetitia;
Tchernycheva, Maria;
Julien, Francois H.;
Baumann, Esther;
Giorgetta, Fabrizio R.;
Hofstetter, Daniel

Publication type:

Article

Nitrogen doping of SiC thin films deposited by RF magnetron sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 835, doi. 10.1007/s10854-007-9487-y

By:

Fraga, Mariana Amorim;
Massi, Marcos;
Oliveira, Ivo C.;
Maciel, Homero S.;
dos Santos Filho, Sebastião G.;
Mansano, Ronaldo D.

Publication type:

Article