Works matching IS 09574522 AND DT 2008 AND VI 19 AND IP 6
Results: 16
Phase formation and microstructure of Nd<sup>+3</sup> doped Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> prepared by sol–gel method.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 577, doi. 10.1007/s10854-007-9392-4
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Electrodeposition of tin: a simple approach.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 553, doi. 10.1007/s10854-007-9385-3
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Doping of phthalocyanine films: structural reorganization versus acceptor effect.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 500, doi. 10.1007/s10854-007-9370-x
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FT-IR, Raman and UV–VIS spectroscopic studies of copper doped 3Bi<sub>2</sub>O<sub>3 </sub>·B<sub>2</sub>O<sub>3</sub> glass matix.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 584, doi. 10.1007/s10854-007-9393-3
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Profile of the wafer level ECD gold bumps under variable parameters.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 563, doi. 10.1007/s10854-007-9387-1
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Microwave dielectric properties of Ba<sub>4</sub>LaTiNb<sub>3− x </sub>Ta<sub> x </sub>O<sub>15</sub> ceramics.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 543, doi. 10.1007/s10854-007-9383-5
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Synthesis and characterization of copper substituted lithium manganate spinels.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 533, doi. 10.1007/s10854-007-9376-4
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Nanoporous ZnO thin films deposited by electrochemical anodization: effect of UV light.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 493, doi. 10.1007/s10854-008-9604-6
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Effect of erbium oxide on synthesis and magnetic properties of yttrium-iron garnet nanoparticles in organic medium.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 509, doi. 10.1007/s10854-007-9372-8
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Effect of Mn substitutions on dielectric properties of high dielectric constant BaTiO<sub>3</sub>-based ceramic.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 505, doi. 10.1007/s10854-007-9371-9
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Effects of working pressure on the electrical and optical properties of aluminum-doped zinc oxide thin films.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 528, doi. 10.1007/s10854-007-9375-5
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Effect of homo-buffer layers on the optical properties of ZnO thin films grown by pulsed laser deposition on Si (100).
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 538, doi. 10.1007/s10854-007-9377-3
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Nanoindentation for measuring individual phase mechanical properties of lead free solder alloy.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 514, doi. 10.1007/s10854-007-9374-6
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In-house development of co-fireable thick film silver conductor for LTCC applications.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 522, doi. 10.1007/s10854-007-9373-7
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Gas sensing properties of nano SnO<sub>2</sub> based thick films prepared by dip coating method with effect of molarity of PtCl<sub>2</sub> solution.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 547, doi. 10.1007/s10854-007-9384-4
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Modeling silicon–germanium interdiffusion by the vacancy exchange and interstitial mechanisms.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 569, doi. 10.1007/s10854-007-9391-5
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