Works matching IS 09574522 AND DT 2008 AND VI 19 AND IP 4

Results: 19

Synthesis and luminescent characterization of YAl3(BO3)4:Tb3+ phosphors.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 319, doi. 10.1007/s10854-007-9320-7

By:

Zhouyun Ren;
Chunyan Tao;
Hua Yang

Publication type:

Article

Synthesis and luminescent properties of Sr4Al14O25:Eu2+ blue–green emitting phosphor for white light-emitting diodes (LEDs).

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 339, doi. 10.1007/s10854-007-9325-2

By:

Zhanchao Wu;
Jianxin Shi;
Jing Wang;
Menglian Gong;
Qiang Su

Publication type:

Article

Investigation on the synthesis of (Zn1−xMgx)TiO3 and the modulation effect of CaTiO3.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 343, doi. 10.1007/s10854-007-9326-1

By:

Ying Yuan;
Shuren Zhang;
Xiaohua Zhou;
Longcheng Xiang

Publication type:

Article

Electrical and morphological characterization of polyaniline/sulfonated poly(arylene ether sulfone) composite films.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 389, doi. 10.1007/s10854-007-9350-1

By:

Sankir, Nurdan D.;
Sankir, Mehmet;
Claus, Richard O.

Publication type:

Article

Dielectric and piezoelectric characterization of PSZT–BT ceramics for capacitor applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 373, doi. 10.1007/s10854-007-9346-x

By:

Koduri, Ramam;
Orellana, Jose Rodrigo Anfossi

Publication type:

Article

Size effects in small scaled lead-free solder joints.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 383, doi. 10.1007/s10854-007-9349-7

By:

Zimprich, P.;
Betzwar-Kotas, A.;
Khatibi, G.;
Weiss, B.;
Ipser, H.

Publication type:

Article

Characteristics of sol–gel dip coated Ceria films.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 369, doi. 10.1007/s10854-007-9345-y

By:

Murali, K. R.

Publication type:

Article

PTCR characteristics of semiconducting barium titanate ceramics produced by high-energy ball-milling.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 357, doi. 10.1007/s10854-007-9343-0

By:

Park, K.;
Ha, J.-G.;
Kim, C.-W.;
Kim, Jun-Gyu

Publication type:

Article

Modified thermoelectric figure of merit estimated from enhanced mobility of [100] oriented beta-FeSi2 thin film.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 311, doi. 10.1007/s10854-007-9335-0

By:

Kakemoto, Hirofumi;
Higuchi, Tohru;
Shibata, Hajime;
Wada, Satoshi;
Tsurumi, Takaaki

Publication type:

Article

Thermal creep and fracture behaviors of the lead-free Sn–Ag–Cu–Bi solder interconnections under different stress levels.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 393, doi. 10.1007/s10854-007-9351-0

By:

Zhang, X. P.;
Yin, L. M.;
Yu, C. B.

Publication type:

Article

Raman scattering studies of ultrashallow Sb implants in strained Si.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 305, doi. 10.1007/s10854-007-9339-9

By:

O'Reilly, L.;
Bennett, N. S.;
McNally, P. J.;
Sealy, B. J.;
Cowern, N. E. B.;
Lankinen, A.;
Tuomi, T. O.

Publication type:

Article

Microstructure and dielectric properties of BaTiO3-based X7R ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 327, doi. 10.1007/s10854-007-9322-5

By:

Liying Chen;
Shunhua Wu;
Shuang Wang;
Guoqing Wang

Publication type:

Article

Thermal annealing behaviour on Schottky barrier parameters and structural properties of Au contacts to n-type GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 333, doi. 10.1007/s10854-007-9323-4

By:

Reddy, K. Jagadeswara;
Reddy, Varra Rajagopal;
Reddy, P. Narasimha

Publication type:

Article

Creep property of composite solders reinforced by nano-sized particles.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 349, doi. 10.1007/s10854-007-9327-0

By:

Yaowu Shi;
Jianping Liu;
Zhidong Xia;
Yongping Lei;
Fu Guo;
Xiaoyan Li

Publication type:

Article

Thickness dependence of refractive index and optical gap of PMMA layers prepared under electrical field.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 363, doi. 10.1007/s10854-007-9344-z

By:

Švorčík, V.;
Lyutakov, O.;
Huttel, I.

Publication type:

Article

Dependence of Cu/In ratio of structural and electrical characterization of CuInS2 crystal.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 301, doi. 10.1007/s10854-007-9334-1

By:

Yoshino, K.;
Nomoto, K.;
Kinoshita, A.;
Ikari, T.;
Akaki, Y.;
Yoshitake, T.

Publication type:

Article

Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type Si x Ge1− x (0.93 < x < 0.96) single crystals.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 315, doi. 10.1007/s10854-007-9338-x

By:

Yonenaga, I.

Publication type:

Article

Microstructure and dielectric properties of BaZr x Ti1− x O3 ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 379, doi. 10.1007/s10854-007-9348-8

By:

Hongwei Chen;
Chuanren Yang;
Chunlin Fu;
Jun Shi;
Jihua Zhang;
Wenjian Leng

Publication type:

Article

Modeling vacancy injection from the silicon/silicon-nitride interface.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 323, doi. 10.1007/s10854-007-9321-6

By:

Hasanuzzaman, Mohammad;
Haddara, Yaser M.

Publication type:

Article

Works matching IS 09574522 AND DT 2008 AND VI 19 AND IP 4

Synthesis and luminescent characterization of YAl<sub>3</sub>(BO<sub>3</sub>)<sub>4</sub>:Tb<sup>3+</sup> phosphors.

Synthesis and luminescent properties of Sr<sub>4</sub>Al<sub>14</sub>O<sub>25</sub>:Eu<sup>2+</sup> blue–green emitting phosphor for white light-emitting diodes (LEDs).

Investigation on the synthesis of (Zn<sub>1−x</sub>Mg<sub>x</sub>)TiO<sub>3</sub> and the modulation effect of CaTiO<sub>3</sub>.

Electrical and morphological characterization of polyaniline/sulfonated poly(arylene ether sulfone) composite films.

Dielectric and piezoelectric characterization of PSZT–BT ceramics for capacitor applications.

Size effects in small scaled lead-free solder joints.

Characteristics of sol–gel dip coated Ceria films.

PTCR characteristics of semiconducting barium titanate ceramics produced by high-energy ball-milling.

Modified thermoelectric figure of merit estimated from enhanced mobility of [100] oriented beta-FeSi<sub>2</sub> thin film.

Thermal creep and fracture behaviors of the lead-free Sn–Ag–Cu–Bi solder interconnections under different stress levels.

Raman scattering studies of ultrashallow Sb implants in strained Si.

Microstructure and dielectric properties of BaTiO<sub>3</sub>-based X7R ceramics.

Thermal annealing behaviour on Schottky barrier parameters and structural properties of Au contacts to n-type GaN.

Creep property of composite solders reinforced by nano-sized particles.

Thickness dependence of refractive index and optical gap of PMMA layers prepared under electrical field.

Dependence of Cu/In ratio of structural and electrical characterization of CuInS<sub>2</sub> crystal.

Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type Si<sub> x </sub>Ge<sub>1− x </sub> (0.93 < x < 0.96) single crystals.

Microstructure and dielectric properties of BaZr<sub> x </sub>Ti<sub>1− x </sub>O<sub>3</sub> ceramics.

Modeling vacancy injection from the silicon/silicon-nitride interface.