Effect of temperature on thermally induced defects in silicon.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 267, doi. 10.1007/s10854-007-9272-y
- By:
- Publication type:
- Article
Works matching IS 09574522 AND DT 2008 AND VI 19 AND IP 3
Results: 16
1
2
Effects of activation time on the electrochemical capacitance of activated carbon nanotubes.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 241, doi. 10.1007/s10854-007-9291-8
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- Publication type:
- Article
3
Phase relations in the Cu<sub>2</sub>Te–Al<sub>2</sub>Te<sub>3</sub> semiconductor system.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 255, doi. 10.1007/s10854-007-9271-z
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- Publication type:
- Article
4
Pulse plated zinc sulphide films and their characteristics.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 217, doi. 10.1007/s10854-007-9225-5
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- Publication type:
- Article
5
Strain oriented microstructural change during the fabrication of free-standing PbSe micro-rods.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 237, doi. 10.1007/s10854-007-9261-1
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- Publication type:
- Article
6
GeSe<sub>2</sub>–Ga<sub>2</sub>S<sub>3</sub>–PbI<sub>2</sub> as materials for IR-stimulated optical second harmonic generation.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 233, doi. 10.1007/s10854-007-9268-7
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- Publication type:
- Article
7
Influence of deposition parameters on preferred orientation of RF magnetron sputtered BST thin films.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 223, doi. 10.1007/s10854-007-9270-0
- By:
- Publication type:
- Article
8
Effect of Al content on the formation of intermetallic compounds in Sn–Ag–Zn lead-free solder.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 247, doi. 10.1007/s10854-007-9279-4
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- Publication type:
- Article
9
The effects of third alloying elements on the bulk Ag<sub>3</sub>Sn formation in slowly cooled Sn–3.5Ag lead-free solder.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 275, doi. 10.1007/s10854-007-9292-7
- By:
- Publication type:
- Article
10
BaTiO<sub>3</sub> and SrBiO<sub>2.5</sub> two phase system NTC thermistors.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 271, doi. 10.1007/s10854-007-9281-x
- By:
- Publication type:
- Article
11
Effect of inter-electrode spacing on structural and electrical properties of RF sputtered AlN films.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 261, doi. 10.1007/s10854-007-9280-y
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- Publication type:
- Article
12
Effect of preparation methods on microstructures and microwave dielectric properties of Ba(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> ceramics.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 227, doi. 10.1007/s10854-007-9290-9
- By:
- Publication type:
- Article
13
Preparation of CdS<sub> x </sub>Se<sub>1− x </sub> films by brush plating technique and their characteristics.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 289, doi. 10.1007/s10854-007-9297-2
- By:
- Publication type:
- Article
14
Effects of bonding frequency on Au wedge wire bondability.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 281, doi. 10.1007/s10854-007-9312-7
- By:
- Publication type:
- Article
15
Structure and photochromism of polyoxometalates nanoparticles in cross-linked polymer networks.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 295, doi. 10.1007/s10854-007-9316-3
- By:
- Publication type:
- Article
16
Seed-layer controlled synthesis of well-aligned ZnO nanowire arrays via a low temperature aqueous solution method.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 211, doi. 10.1007/s10854-007-9319-0
- By:
- Publication type:
- Article