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Editorial.
- Published in:
- 2008
- By:
- Publication type:
- Editorial
Morphological, optical and electrical properties of γ CuCl deposited by vacuum evaporation.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 99, doi. 10.1007/s10854-007-9309-2
- By:
- Publication type:
- Article
Electrical studies on sputtered CuCl thin films.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 103, doi. 10.1007/s10854-007-9310-9
- By:
- Publication type:
- Article
Non-equilibrium Green’s function method for modeling quantum electron transport in nano-scale devices with anisotropic multiband structure.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 107, doi. 10.1007/s10854-007-9336-z
- By:
- Publication type:
- Article
Au agglomerates observed in the out-diffusion process of supersaturated high-temperature substitutional Au in Si.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 111, doi. 10.1007/s10854-007-9311-8
- By:
- Publication type:
- Article
In-line characterization of dielectric constant and leakage currents of low-k films with corona charge method.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 115, doi. 10.1007/s10854-007-9328-z
- By:
- Publication type:
- Article
Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 119, doi. 10.1007/s10854-007-9337-y
- By:
- Publication type:
- Article
Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognition.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 125, doi. 10.1007/s10854-007-9308-3
- By:
- Publication type:
- Article
Anisotropic lattice coherency of GaAs nanocrystals deposited on Si(100) surface by molecular beam epitaxy.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 131, doi. 10.1007/s10854-007-9305-6
- By:
- Publication type:
- Article
In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 137, doi. 10.1007/s10854-007-9306-5
- By:
- Publication type:
- Article
Dislocations at the interface between sapphire and GaN.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 143, doi. 10.1007/s10854-007-9307-4
- By:
- Publication type:
- Article
Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 149, doi. 10.1007/s10854-007-9303-8
- By:
- Publication type:
- Article
UV Raman spectroscopy of group IV nanocrystals embedded in a SiO<sub>2</sub> matrix.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 155, doi. 10.1007/s10854-007-9304-7
- By:
- Publication type:
- Article
Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transients.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 161, doi. 10.1007/s10854-007-9301-x
- By:
- Publication type:
- Article
Optical property and crystalline quarity of Si and Ge added β-Ga<sub>2</sub>O<sub>3</sub> thin films.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 167, doi. 10.1007/s10854-007-9329-y
- By:
- Publication type:
- Article
Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 171, doi. 10.1007/s10854-007-9302-9
- By:
- Publication type:
- Article
Degradation of SiC-MESFETs by irradiation.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 175, doi. 10.1007/s10854-007-9330-5
- By:
- Publication type:
- Article
Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 179, doi. 10.1007/s10854-007-9299-0
- By:
- Publication type:
- Article
Double-polysilicon self-aligned lateral bipolar transistors.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 183, doi. 10.1007/s10854-007-9300-y
- By:
- Publication type:
- Article
High temperature assessment of nitride-based devices.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 189, doi. 10.1007/s10854-007-9298-1
- By:
- Publication type:
- Article
GaN based high temperature strain gauges.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 195, doi. 10.1007/s10854-007-9331-4
- By:
- Publication type:
- Article
Dislocations of ZnO single crystals examined by X-ray topography and photoluminescence.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 199, doi. 10.1007/s10854-007-9332-3
- By:
- Publication type:
- Article
Structural, optical and electrical characterization of undoped ZnMgO film grown by spray pyrolysis method.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 203, doi. 10.1007/s10854-007-9333-2
- By:
- Publication type:
- Article