Works matching IS 09574522 AND DT 2008 AND VI 19 AND IP 2

Results: 23

Anisotropic lattice coherency of GaAs nanocrystals deposited on Si(100) surface by molecular beam epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 131, doi. 10.1007/s10854-007-9305-6

By:

Usui, Hiroyuki;
Yasuda, Hidehiro;
Mori, Hirotaro

Publication type:

Article

Au agglomerates observed in the out-diffusion process of supersaturated high-temperature substitutional Au in Si.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 111, doi. 10.1007/s10854-007-9311-8

By:

Morooka, M.

Publication type:

Article

Optical property and crystalline quarity of Si and Ge added β-Ga2O3 thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 167, doi. 10.1007/s10854-007-9329-y

By:

Takakura, K.;
Kudou, T.;
Hayama, K.;
Shigaki, K.;
Ohyama, H.;
Kayamoto, K.;
Shibuya, M.

Publication type:

Article

Structural, optical and electrical characterization of undoped ZnMgO film grown by spray pyrolysis method.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 203, doi. 10.1007/s10854-007-9333-2

By:

Yoshino, K.;
Oyama, S.;
Yoneta, M.

Publication type:

Article

Editorial.

Published in:

2008

By:

McNally, Patrick

Publication type:

Editorial

In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 137, doi. 10.1007/s10854-007-9306-5

By:

Reentilä, O.;
Lankinen, A.;
Mattila, M.;
Säynätjoki, A.;
Tuomi, T. O.;
Lipsanen, H.;
O'Reilly, L.;
McNally, P. J.

Publication type:

Article

Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 149, doi. 10.1007/s10854-007-9303-8

By:

Säynätjoki, A.;
Lankinen, A.;
Tuomi, T. O.;
McNally, P. J.;
Danilewsky, A.;
Zhilyaev, Y.;
Fedorov, L.

Publication type:

Article

Electrical studies on sputtered CuCl thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 103, doi. 10.1007/s10854-007-9310-9

By:

Natarajan, Gomathi;
Rajendra Kumar, R. T.;
Daniels, S.;
Cameron, D. C.;
McNally, P. J.

Publication type:

Article

Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transients.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 161, doi. 10.1007/s10854-007-9301-x

By:

Hayama, K.;
Takakura, K.;
Ohyama, H.;
Rafí, J. M.;
Mercha, A.;
Simoen, E.;
Claeys, C.

Publication type:

Article

Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 125, doi. 10.1007/s10854-007-9308-3

By:

Matsui, Y.;
Miyoshi, Y.

Publication type:

Article

Morphological, optical and electrical properties of γ CuCl deposited by vacuum evaporation.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 99, doi. 10.1007/s10854-007-9309-2

By:

Lucas, Francis Olabanji;
Mitra, A.;
McNally, P. J.;
O'Reilly, L.;
Daniels, S.;
Natarajan, Gomathi;
Durose, K.;
Proskuryakov, Y. Y.;
Cameron, D. C.

Publication type:

Article

Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 179, doi. 10.1007/s10854-007-9299-0

By:

Iamraksa, P.;
Lloyd, N. S.;
Bagnall, D. M.

Publication type:

Article

Double-polysilicon self-aligned lateral bipolar transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 183, doi. 10.1007/s10854-007-9300-y

By:

Pengpad, P.;
Bagnall, D. M.

Publication type:

Article

Non-equilibrium Green’s function method for modeling quantum electron transport in nano-scale devices with anisotropic multiband structure.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 107, doi. 10.1007/s10854-007-9336-z

By:

Fitriawan, Helmy;
Ogawa, Matsuto;
Souma, Satofumi;
Miyoshi, Tanroku

Publication type:

Article

In-line characterization of dielectric constant and leakage currents of low-k films with corona charge method.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 115, doi. 10.1007/s10854-007-9328-z

By:

Fossati, D.;
Beitia, C.;
Plantier, L.;
Imbert, G.;
Passefort, S.;
Desbois, M.;
Volpi, F.;
Royer, J.-C.

Publication type:

Article

Degradation of SiC-MESFETs by irradiation.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 175, doi. 10.1007/s10854-007-9330-5

By:

Ohyama, H.;
Takakura, K.;
Uemura, K.;
Shigaki, K.;
Kudou, T.;
Matsumoto, T.;
Arai, M.;
Kuboyama, S.;
Kamezawa, C.;
Simoen, E.;
Claeys, C.

Publication type:

Article

Dislocations at the interface between sapphire and GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 143, doi. 10.1007/s10854-007-9307-4

By:

Lankinen, A.;
Lang, T.;
Suihkonen, S.;
Svensk, O.;
Säynätjoki, A.;
Tuomi, T. O.;
McNally, P. J.;
Odnoblyudov, M.;
Bougrov, V.;
Danilewsky, A. N.;
Bergman, P.;
Simon, R.

Publication type:

Article

Dislocations of ZnO single crystals examined by X-ray topography and photoluminescence.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 199, doi. 10.1007/s10854-007-9332-3

By:

Yoshino, K.;
Yoneta, M.;
Yonenaga, I.

Publication type:

Article

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 119, doi. 10.1007/s10854-007-9337-y

By:

McNeill, D. W.;
Bhattacharya, S.;
Wadsworth, H.;
Ruddell, F. H.;
Mitchell, S. J. N.;
Armstrong, B. M.;
Gamble, H. S.

Publication type:

Article

High temperature assessment of nitride-based devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 189, doi. 10.1007/s10854-007-9298-1

By:

Cuerdo, R.;
Pedrós, J.;
Navarro, A.;
Braña, A. F.;
Pau, J. L.;
Muñoz, E.;
Calle, F.

Publication type:

Article

GaN based high temperature strain gauges.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 195, doi. 10.1007/s10854-007-9331-4

By:

Tilak, V.;
Jiang, J.;
Batoni, P.;
Knobloch, A.

Publication type:

Article

Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 171, doi. 10.1007/s10854-007-9302-9

By:

Ohyama, H.;
Shitogiden, H.;
Takakura, K.;
Shigaki, K.;
Kuboyama, S.;
Kamesawa, C.;
Simoen, E.;
Claeys, C.

Publication type:

Article

UV Raman spectroscopy of group IV nanocrystals embedded in a SiO2 matrix.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 155, doi. 10.1007/s10854-007-9304-7

By:

Prieto, A. C.;
Torres, A.;
Jiménez, J.;
Rodríguez, A.;
Sangrador, J.;
Rodríguez, T.

Publication type:

Article

Works matching IS 09574522 AND DT 2008 AND VI 19 AND IP 2

Anisotropic lattice coherency of GaAs nanocrystals deposited on Si(100) surface by molecular beam epitaxy.

Au agglomerates observed in the out-diffusion process of supersaturated high-temperature substitutional Au in Si.

Optical property and crystalline quarity of Si and Ge added β-Ga<sub>2</sub>O<sub>3</sub> thin films.

Structural, optical and electrical characterization of undoped ZnMgO film grown by spray pyrolysis method.

Editorial.

In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs.

Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy.

Electrical studies on sputtered CuCl thin films.

Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transients.

Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognition.

Morphological, optical and electrical properties of γ CuCl deposited by vacuum evaporation.

Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition.

Double-polysilicon self-aligned lateral bipolar transistors.

Non-equilibrium Green’s function method for modeling quantum electron transport in nano-scale devices with anisotropic multiband structure.

In-line characterization of dielectric constant and leakage currents of low-k films with corona charge method.

Degradation of SiC-MESFETs by irradiation.

Dislocations at the interface between sapphire and GaN.

Dislocations of ZnO single crystals examined by X-ray topography and photoluminescence.

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates.

High temperature assessment of nitride-based devices.

GaN based high temperature strain gauges.

Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation.

UV Raman spectroscopy of group IV nanocrystals embedded in a SiO<sub>2</sub> matrix.